INFINEON IPI60R385CP

IPI60R385CP
CoolMOSTM Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ON x Qg
650
0.385 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
17
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO262
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
Package
Ordering Code
Marking
IPI60R385CP
PG-TO262
SP000103250
6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
9.0
T C=100 °C
5.7
Pulsed drain current2)
I D,pulse
T C=25 °C
27
Avalanche energy, single pulse
E AS
I D=3.4 A, V DD=50 V
227
Avalanche energy, repetitive t AR2),3)
E AR
I D=3.4 A, V DD=50 V
0.3
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev. 2.0
Unit
A
mJ
3
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
83
W
-55 ... 150
°C
M3 and M3.5 screws
page 1
60
Ncm
2006-04-05
IPI60R385CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
5.2
T C=25 °C
A
27
15
V/ns
Values
Unit
min.
typ.
max.
-
-
1.5
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.34 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=5.2 A,
T j=25 °C
-
0.35
0.385
Ω
V GS=10 V, I D=5.2 A,
T j=150 °C
-
0.94
-
f =1 MHz, open drain
-
1.8
-
Gate resistance
Rev. 2.0
RG
page 2
Ω
2006-04-05
IPI60R385CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
790
-
-
38
-
-
36
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
-
96
-
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
40
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
4
-
Gate to drain charge
Q gd
-
6
-
Gate charge total
Qg
-
17
22
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
260
-
ns
-
3.1
-
µC
-
24
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=5.2 A,
R G=3.3 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=5.2 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=5.2 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD<=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2006-04-05
IPI60R385CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
100
limited by on-state
resistance
80
1 µs
10 µs
101
60
I D [A]
P tot [W]
100 µs
1 ms
40
DC
100
10 ms
20
10-1
0
0
40
80
120
100
160
101
102
T C [°C]
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC=f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
25
20 V
8V
10 V
7V
20
100
6V
0.5
Z thJC [K/W]
15
I D [A]
0.2
0.1
0.05
10-1
5.5 V
10
0.02
0.01
5V
5
single pulse
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
100
Rev. 2.0
0
5
10
15
20
V DS [V]
t p [s]
page 4
2006-04-05
IPI60R385CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
16
1.6
8V
14
6V
7V
10 V
7V
5V
5.5 V
6V
20 V
12
6.5 V
1.2
20 V
5.5 V
8
R DS(on) [Ω]
I D [A]
10
5V
0.8
6
4.5 V
4
0.4
2
0
0
0
5
10
15
20
0
5
10
15
20
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=5.2 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
1.2
40
36
1
32
28
0.8
24
I D [A]
R DS(on) [Ω]
C °25
0.6
C °150
16
98 %
0.4
20
typ
12
8
0.2
4
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.0
0
2
4
6
8
10
V GS [V]
page 5
2006-04-05
IPI60R385CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=5.2 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
9
8
120 V
7
400 V
150 °C, 98%
25 °C
150 °C
101
I F [A]
V GS [V]
6
5
4
100
3
25 °C, 98%
2
1
10-1
0
0
5
10
15
0
20
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=3.4 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
700
250
200
660
E AS [mJ]
V BR(DSS) [V]
150
100
620
580
50
540
0
20
60
100
140
180
T j [°C]
Rev. 2.0
-60
-20
20
60
100
140
180
T j [°C]
page 6
2006-04-05
IPI60R385CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
6
105
104
4
E oss [µJ]
C [pF]
10
Ciss
3
102
Coss
2
101
Crss
10
0
0
0
100
200
300
400
500
V DS [V]
Rev. 2.0
0
100
200
300
400
500
600
V DS [V]
page 7
2006-04-05
IPI60R385CP
Definition of diode switching characteristics
Rev. 2.0
page 8
2006-04-05
IPI60R385CP
PG-TO262-3-1 : Outlines
Dimensions in mm/inches:
Rev. 2.0
page 9
2006-04-05
IPI60R385CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 2.0
page 10
2006-04-05