IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 100 V R DS(on),max 64 mΩ ID 17 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G Package PG-TO252-3 PG-TO251-3 Marking 64CN10N 64CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 17 T C=100 °C 13 Unit A Pulsed drain current2) I D,pulse T C=25 °C 68 Avalanche energy, single pulse E AS I D=17 A, R GS=25 Ω 34 mJ Reverse diode dv /dt dv /dt I D=17 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage3) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) ±20 V 44 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 2) see figure 3 3) T jmax=150°C and duty cycle D =0.01 for V GS<-5V Rev. 1.01 page 1 2006-02-21 IPD64CN10N G IPU64CN10N G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.4 minimal footprint - - 75 6 cm² cooling area 4) - - 50 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient (TO252) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 2 3 4 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=17 A - 45 64 mΩ Gate resistance RG - 1.6 - Ω Transconductance g fs 8 15 - S |V DS|>2|I D|R DS(on)max, I D=17 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-02-21 IPD64CN10N G IPU64CN10N G Parameter Values Symbol Conditions Unit min. typ. max. - 428 569 - 132 176 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 6 10 Turn-on delay time t d(on) - 7 11 Rise time tr - 3 4 Turn-off delay time t d(off) - 9 14 Fall time tf - 2 4 Gate to source charge Q gs - 3 4 Gate to drain charge Q gd - 2 3 - 3 4 V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=17 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=50 V, I D=17 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 6 9 Gate plateau voltage V plateau - 6.3 - Output charge Q oss - 13 18 nC - - 17 A - - 68 - 1 1.2 - 70 - 120 V DD=50 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=17 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-02-21 IPD64CN10N G IPU64CN10N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 20 40 15 I D [A] P tot [W] 30 10 20 5 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 µs 10 µs 100 µs 101 0.5 I D [A] Z thJC [K/W] 1 ms DC 10 ms 100 0.2 0.1 100 0.05 0.02 0.01 single pulse 10-1 10 10-1 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 1.01 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-02-21 IPD64CN10N G IPU64CN10N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 50 10 V 8V 140 40 120 5 V 5.5 V 6 V 8V 7V 30 R DS(on) [mΩ] 100 I D [A] 7V 20 6.5 V 80 60 10 V 6V 40 10 5.5 V 20 5V 4.5 V 0 0 1 0 2 3 4 5 0 20 40 V DS [V] 60 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 50 30 40 20 I D [A] g fs [S] 30 20 10 10 175 °C 25 °C 0 0 0 2 4 6 8 Rev. 1.01 0 10 20 30 40 50 I D [A] V GS [V] page 5 2006-02-21 IPD64CN10N G IPU64CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=17 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 150 4 3.5 200 µA 3 100 20 µA V GS(th) [V] R DS(on) [mΩ] 2.5 98 % 1.5 typ 50 2 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 175 °C, 98% 25 °C 103 175 °C Ciss 10 25 °C, 98% I F [A] C [pF] Coss 102 1 Crss 101 100 0.1 0 20 40 60 80 Rev. 1.01 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2006-02-21 IPD64CN10N G IPU64CN10N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=17 A pulsed parameter: T j(start) parameter: V DD 100 12 20 V 10 50 V 80 V V GS [V] I AS [A] 8 10 25 °C 6 100 °C 4 150 °C 2 1 0 1 10 100 1000 0 2 4 6 8 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 115 V GS Qg V BR(DSS) [V] 110 105 V g s(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.01 page 7 2006-02-21 IPD64CN10N G IPU64CN10N G PG-TO252-3: Outline Rev. 1.01 page 8 2006-02-21 IPD64CN10N G IPU64CN10N G PG-TO251-3: Outline Rev. 1.01 page 9 2006-02-21 IPD64CN10N G IPU64CN10N G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 10 2006-02-21