SPP77N06S2-12 SPB77N06S2-12 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS(on) 12 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code Marking SPP77N06S2-12 P- TO220 -3-1 Q67060-S6029 2N0612 SPB77N06S2-12 P- TO263 -3-2 Q67060-S6030 2N0612 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value Unit A ID 80 TC=25°C 56 ID puls 320 EAS 280 Repetitive avalanche energy, limited by Tjmax 1) EAR 16 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 158 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=77A, V DD=25V, RGS=25Ω kV/µs IS=77A, V DS=44V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg 55/175/56 IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.63 0.95 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm2 cooling area 2) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=93µA Zero gate voltage drain current µA IDSS V DS=55V, VGS=0V, Tj=25°C - 0.01 1 V DS=55V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 9.8 12 mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=38A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 27 54 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =56A Input capacitance Ciss VGS =0V, VDS =25V, - 1770 2350 pF Output capacitance Coss f=1MHz - 460 610 Reverse transfer capacitance Crss - 120 180 Turn-on delay time td(on) VDD =30V, VGS =10V, - 14 20 Rise time tr ID =77A, - 27 40 Turn-off delay time td(off) RG =6.2Ω - 34 50 Fall time tf - 26 39 - 9 12 - 18 28 - 45 60 V(plateau) VDD =44V, ID =77A - 5.9 - V IS - - 80 A - - 320 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =44V, ID =77A VDD =44V, ID =77A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =77A - 1 1.3 V Reverse recovery time trr VR =30V, IF =lS , - 45 60 ns Reverse recovery charge Qrr diF /dt=100A/µs - 64 80 nC Page 3 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPP77N06S2-12 170 SPP77N06S2-12 90 W A 140 70 60 ID P tot 120 100 50 80 40 60 30 40 20 20 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP77N06S2-12 10 1 SPP77N06S2-12 K/W A t = 7.6µs p 10 µs 0 Z thJC V 2 R DS (on ) ID = 10 DS /I D 10 10 -1 10 -2 100 µs D = 0.50 10 0.20 1 0.10 1 ms 0.05 10 0.02 -3 0.01 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPP77N06S2-12 SPB77N06S2-12 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP77N06S2-12 190 mΩ A g VGS [V] 160 a 4.5 b 4.8 c 5.5 f d 6.0 e 6.5 f 7.0 ID 140 120 e 100 g 8.0 h 10.0 c d e f 32 R DS(on) h SPP77N06S2-12 38 Ptot = 158W 28 24 20 80 16 g d 60 12 c 40 h 8 20 VGS [V] = 4 c 5.5 b a 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4 d 6.0 e 6.5 f 7.0 g h 8.0 10.0 0 5 0 20 40 60 80 100 120 A 150 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 160 60 S A 50 45 g fs ID 120 100 40 35 80 30 25 60 20 40 15 10 20 5 0 0 1 2 3 4 5 0 7 V VGS 0 Page 5 10 20 30 40 50 60 70 A 90 ID 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 38 A, VGS = 10 V parameter: VGS = VDS SPP77N06S2-12 40 4 mΩ V 465 µA V GS(th) R DS(on) 32 28 24 20 3 93 µA 2.5 2 16 98% 12 1.5 typ 1 8 0.5 4 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 SPP77N06S2-12 A pF 10 2 10 1 C IF Ciss 10 3 Coss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) Crss 10 T j = 175 °C (98%) 2 0 10 5 10 15 20 V 30 VDS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D=77A, VDD = 25 V, RGS = 25 Ω parameter: ID = 80 A pulsed SPP77N06S2-12 16 300 mJ V 240 12 VGS E AS 220 200 180 160 0,2 VDS max 10 0,8 VDS max 8 140 120 6 100 80 4 60 40 2 20 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 10 20 30 40 50 nC 70 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPP77N06S2-12 V(BR)DSS V 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP77N06S2-12 and BSPB77N06S2-12, for simplicity the device is referred to by the term SPP77N06S2-12 and SPB77N06S2-12 throughout this documentation. Page 8 2003-05-09