PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS ® FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz Efficiency Adj Low er Alt Low er Alt Upper -38 20 -42 15 -46 ACPR (dBc) Adj Upper Efficiency (%) PTF210451F Package H-31265-2 Features 3-Carrier TD-SCDMA Drive-up 25 PTF210451E Package H-30265-2 • Thermally-enhanced packages, Pb-free and RoHS-compliant • Internal matching for wideband performance • Typical three-carrier TD-SCDMA performance - Average output power = 3 W - Gain = 14 dB - Efficiency = 12.5% - ACPR = –50 dBc • Typical CW performance - Output power at P–1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% 10 -50 5 -54 • Integrated ESD protection: Human Body Model, Class 1 (minimum) 0 -58 • Excellent thermal stability • Low HCI Drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power 0.0 3.0 6.0 9.0 Output Power (W) RF Characteristics WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG ƒ1 = 2140 MHz, ƒ2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD — –37 — dBc Gain Gps — 14 — dB Drain Efficiency ηD — 27 — % All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 13 14 — dB Drain Efficiency ηD 35 38 — % Intermodulation Distortion IMD — –32 –30 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.2 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 1.0 °C/W Ordering Information Type and Version Package Outline Package Description Marking PTF210451E V1 H-30265-2 Thermally-enhanced slotted flange, single-ended PTF210451E PTF210451F H-31265-2 Thermally-enhanced earless flange, single-ended PTF210451F V1 *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Typical Performance (data taken in production test fixture) Broadband Performance Power Sweep, CW Conditions VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm VDD = 28 V, IDQ = 500 mA, ƒ = 2170 MHz 30 17 0 60 20 -10 -15 15 Gain 10 5 -20 -25 Input Retrun Loss 0 2070 2105 2140 2175 16 50 15 40 Gain 14 30 13 20 12 -30 2210 Drain Efficiency (%) -5 Gain (dB) Efficiency 25 Input Return Loss (dB) Gain (dB), Efficiency (%) Efficiency 10 34 36 38 40 42 44 46 48 Output Power (dBm) Frequency (MHz) Intermodulation Distortion vs. Output Power for selected currents Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 500 mA, ƒ = 2140 MHz, POUT = 45 W PEP -30 -25 -35 -30 3rd Order -35 -40 0.60 A IMD (dBc) IMD (dBc) 0.40 A -45 -50 -40 5th Order -45 -50 -55 0.45 A 0.55 A 0.50 A 7th Order -55 -60 -60 34 36 38 40 42 44 46 48 0 Data Sheet 10 20 30 40 Tone Spacing (MHz) Output Power, PEP (dBm) 3 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Typical Performance (cont.) Two-tone Drive-Up Single-carrier WCDMA Drive-Up VDD = 28 V, IDQ = 500 mA, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 500 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW 40 Efficiency IMD (dBc) -35 35 -40 30 -45 25 IM3 20 -50 -55 15 IM5 IM7 -60 Efficiency 36 38 40 42 44 46 25 -45 20 -50 15 ACPR Up 5 -60 48 30 32 Peak Output Power (dBm) 0 40 35 -15 30 IM3 Up 25 Gain 20 15 -35 10 -40 5 -45 0 24 25 26 27 28 29 30 31 32 33 Supply Voltage (V) Data Sheet Normalized Bias Voltage 3rd Order IMD (dBc) Efficiency 23 40 42 1.03 Gain (dB), Drain Efficiency (%) 45 -5 -30 38 Voltage normalized to typical gate voltage. Series show current. 50 -25 36 Bias Voltage vs. Case Temperature IDQ = 500 mA, ƒ = 2140 MHz, POUT = 44.75 dBm (PEP), tone spacing = 1 MHz -20 34 Avgerage Output Power (dBm) IM3, Gain & Drain Efficiency vs. Supply Voltage -10 10 ACPR Low 5 34 -40 -55 10 -65 30 -35 Drain Efficiency (%) -30 ACPR (dB) 45 Drain Efficiency (%) -25 4.50 A 1.02 3.75 A 1.01 3.00 A 1.00 2.25 A 0.99 1.50 A 0.75 A 0.98 0.97 0.96 -20 5 30 55 80 105 Case Temperature (ºC) 4 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Typical Performance (cont.) 4-Carrier TD-SCDMA Drive-up 6-Carrier TD-SCDMA Drive-up VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz Efficiency Alt Low er Adj Low er Alt Upper Efficiency Adj Low er 25 -38 -42 15 -46 10 -50 -54 5 -54 -58 0 15 -46 10 -50 5 0 4.0 6.0 Efficiency (%) 20 -42 ACPR (dBc) Efficiency (%) Adj Upper 2.0 -38 Adj Upper 20 0.0 Alt Low er Alt Upper 8.0 ACPR (dBc) 25 -58 0.0 Output Power (W) 2.0 4.0 6.0 8.0 Output Power (W) E Broadband Circuit Impedance Data Z Source Ω 0.1 Z Source jX R jX 2070 5.72 –9.36 4.94 –0.87 2110 5.17 –8.97 4.90 –0.69 2140 4.88 –8.52 4.96 –0.60 2170 4.59 –8.16 4.96 –0.49 2210 4.08 –7.79 4.88 –0.39 5 of 10 2210 MHz W <--- R A VE L Z Load Ω MHz Data Sheet 0.3 2210 MHz 2070 MHz S Frequency Z Load 0.2 G 0.1 Z Load 0 .0 Z Source D L OA D S T OW AR E NGTH D 0 .1 - W AV E LE NGTH S T OW A RD G EN Z0 = 50 Ω 2070 MHz 0. 2 0. 3 Rev. 06, 2008-02-13 PTF210451E PTF210451F Test Circuit 210451E SCHEMATIC DWG FOR DATA SHEET.dwg Test circuit schematic for 2170 MHz Circuit Assembly Information DUT PTF210451E or PTF210451F Circuit Board 0.79 mm [.031”] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 LDMOS Transistor Rogers TMM4, 2 oz. copper Electrical Characteristics at 2170 MHz 1 0.047 λ, 45 Ω 0.040 λ, 23 Ω 0.132 λ, 66 Ω 0.028 λ, 45 Ω 0.018 λ, 12 Ω 0.074 λ, 7 Ω 0.152 λ, 9 Ω 0.257 λ, 68 Ω 0.027 λ, 44 Ω 0.056 λ, 56 Ω 0.036 λ, 19 Ω 0.076 λ, 44 Ω Dimensions: L x W (mm) 3.48 x 1.78 2.87 x 4.57 10.08 x 0.89 2.08 x 1.78 1.27 x 10.06 4.98 x 17.68 10.34 x 13.56 19.76 x 0.84 1.98 x 1.83 4.22 x 1.22 2.57 x 5.74 5.64 x 1.80 Dimensions: L x W (in.) 0.137 x 0.070 0.113 x 0.180 0.397 x 0.035 0.082 x 0.070 0.050 x 0.396 0.196 x 0.696 0.407 x 0.534 0.778 x 0.033 0.078 x 0.072 0.166 x 0.048 0.101 x 0.226 0.222 x 0.071 1Electrical Characteristics are rounded. Data Sheet 6 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Test Circuit (cont.) 210451E ASSEMBLY DWG FOR DATA SHEET.dwg Test circuit assembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1 C2, C8 Capacitor, 10 µF, 35 V, Tant TE series Capacitor, 0.01 µF Digi-Key ATC C3, C7 C4, C6 C5, C9 L1 R1, R2 R3 Capacitor, 1 µF Capacitor, 7.5 pF Capacitor, 10 pF Ferrite Bead Resistor, 3.3K ohm, 1/4 W Resistor, 10 ohm, 1/4 W ATC ATC ATC Elne Magnetic Digi-Key Digi-Key PCS6106TR-ND, SMD X08J103AFB ATC 200B103MW X24L105BVC 100B 7R5 100A 100 #BDS31314.6-452 P3.3K ECT-ND P10 ECT-ND *Gerber files for this circuit available on request Data Sheet 7 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Package Outline Specifications Package H-30265-2 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Package Outline Specifications (cont.) Package H-31265-2 (45° X 2.03 [.080]) C L 2X 2.59±0.51 [.102±.020] D LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] C L 15.49±.51 [.610±.020] 10.16 [.400] G R1.27 [R.050] 2X 7.11 [.280] 4X R0.63 [R.025] MAX 10.16±0.25 [.400±.010] SPH 1.57 [.062] | 0.025 [.001]| -A3.56±.38 [.140±.015] S 10.16 [.400] 1.02 [.040] h-31265-2_265-cases Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. 06, 2008-02-13 PTF210451EF Confidential, Limited Internal Distribution Revision History: 2008-02-13 2006-09-05, Data Sheet Previous Version: Data Sheet Page all Subjects (major changes since last revision) Show PTF210451F as released. 1, 2, 8, 9 10 Update package designation. Update company information. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS ® is a registered trademark of Infineon Technologies AG. Edition 2008-02-13 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 06, 2008-02-13