2SB1197KxLT1(SOT 23)

WILLAS
FM120-M+
2SB1197KxLT1
THRU
Low Frequency Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
PNP Silicon
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
current capability, low forward voltage drop.
• High
FEATURE
surge
capability.
• High
ƽHigh
current
capacity in compact package.
for
• Guardring
IC = í0.8A.overvoltage protection.
high-speed switching.
• Ultra
ƽEpitaxial planar type.
• Silicon epitaxial planar chip, metal silicon junction.
ƽNPN complement: 2SD1781K
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
ƽ We declare that
MIL-STD-19500
/228the material of product compliance with RoHS requirements.
Pb-Free
package
is available
RoHS
product for
packing code
suffix "G"
Halogen
free
product
for
packing
codecode
suffix suffix
"H"
RoHS product for packing
”G”
SOT– 23
Mechanical
data
Halogen free product for packing code suffix “H”
: UL94-V0
rated flame Level
retardant
• Epoxy
Moisture
Sensitivity
1
plastic,
SOD-123H
• Case : Molded
DEVICE
MARKING
AND
ORDERING INFORMATION
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Device Method 2026
Marking
3
0.031(0.8) Typ.
0.031(0.8) Typ.
1
Shipping
• Polarity
: Indicated by cathode band
2SB1197KQLT1
AHQ
Position : Any
• Mounting
2SB1197KRLT1
AHR
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
COLLECTOR
BASE
Dimensions in inches and (millimeters)
3000/Tape&Reel
2
EMITTER
3000/Tape&Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS(Ta=25qC)
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol load.
Limits
Parameter
Single phase half wave,
60Hz, resistive of inductive
For capacitive
load, derate
current by 20% VCBO
−40
Collector-base
voltage
Collector-emitter
voltage
RATINGS
Marking Code
Emitter-base voltage
Maximum Recurrent
Reverse Voltage
CollectorPeak
current
Maximum RMS Voltage
Collector power dissipation
Maximum DC Blocking Voltage
Junction temperature
Maximum Average Forward Rectified Current
Storage temperature
−5
12
20
−0.8
VEBO
IC
VRRM
PC
VRMS
Tj
VDC
21
30
IO
−55 to 150
Peak Forward
Surge Current
8.3 ms single half sine-wave
ELECTRICAL
CHARACTERISTICS(Ta=25qC)
IFSM
V 14
A 40
28
W
40
°C
°C
Tstg
Typ.
Max.
Unit
−
−
V
− -55 to−+125 V
−
−
V
ICBO
−
−
−0.5
µA
Cob
−
12
30
pF
15
50
16
60
18
80
10
100
115
150
120
200
V
35
42
56
70
105
140
V
50
60
80
100
150
200
V
1.0
30
Conditions
40
IC= −50µA
120
IC= −1mA A
A
℃
P
-55 to +150
IE= −50µA - 65 to +175
VCB= −20V
Collector cutoff current
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
−0.5
−
VEB= −4V
−
IEBO
µA
Emitter cutoff current
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
−0.5
VCE(sat)
IC/IB= −0.5A/ −50mA
−
−
V
Collector-emitter saturation voltage
0.5
Maximum Average Reverse Current at @T A=25℃
m
390
hFE IR 120
−
−
VCE= −3V, IC= −100mA
DC current transfer ratio
10
@T A=125℃
Rated DC Blocking Voltage
−
−
VCE= −5V, IE=50mA, f=100MHz
200
fT
MHz
Transition frequency
NOTES:
Output capacitance
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
13
30
14
0.2
20
150
Parameter
Symbol Min.
Typical Thermal Resistance (Note 2)
RΘJA
BVCBO
−40
Collector-base breakdown voltage
Typical Junction Capacitance (Note 1)
CJ
CEO
BV
Collector-emitter
breakdown
voltage
Operating Temperature Range
TJ −32
BVEBO
Emitter-base
breakdown voltage
Storage Temperature
Range
TSTG −5
V
VCEO SYMBOL FM120-MH
−32
FM130-MHVFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
superimposed on rated load (JEDEC method)
Unit
VCB= −10V, IE=0A, f=1MHz
2- Thermal Resistance From Junction to Ambient
hFE values are classified as follows :
Item(*)
hFE
2012-06
2012-
Q
120~270
R
180~390
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1197KxLT1THRU
Low
Frequency
FM1200-M+
1.0A
SURFACE
MOUNT SCHOTTKYTransistor
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1197KxLT1
THRU
Low Frequency Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
0.146(3.7)
0.130(3.3)
.063(1.60)
.047(1.20)
.006(0.15)MIN.
0.012(0.3) Typ.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G" .106(2.70)
Halogen free product for packing code suffix "H"
Mechanical data
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.110(2.80)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.083(2.10)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts meet environmental standards
.122(3.10)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.080(2.04)
.070(1.78)
RATINGS
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
.004(0.10)MAX.
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
℃
.020(0.50)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
0.92
VF
0.50
0.70
0.85
.012(0.30)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
.008(0.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@T A=125℃
IR
0.5
10
mA
NOTES:
Dimensions in inches and (millimeters)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1197KxLT1
THRU
Low
Frequency
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(2)
(1)
2SB1197K x
Tape&Reel: 3 Kpcs/Reel capability. LT1 G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
(2) epitaxial
CLASSIFICATION OF h
FE RANK planar chip, metal
silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
which may be included on WILLAS data sheets and/ or specifications can Maximum Recurrent
Peak Reverse Voltage
Volt
VRRM
Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volt
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed
on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
life‐saving implant or other applications intended for life‐sustaining or other related Operating Temperature
Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
or indirectly cause injury or threaten a life without expressed written approval SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking
Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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