2SC2411KxLT1(SOT 23)

WILLAS
FM120-M+
2SC2411KxLT1
THRU
Medium Power Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profile
NPN
silicon
optimize board space.
FEATURE
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
low forward voltage drop.
• High current
ƽEpitaxial
planar capability,
type
• High surge capability.
ƽComplementary
2SA1036K protection.
overvoltage
• Guardring for to
Ultra
high-speed
ƽ•We
declare
that theswitching.
material of product compliance with RoHS requirements.
Silicon epitaxial
chip, metal silicon junction.
•Pb-Free
packageplanar
is available
Lead-free parts meet environmental standards of
•RoHS
product for packing code suffix ”G”
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
MIL-STD-19500 /228
free product
for code
packing
code
RoHS product
for packing
suffix
"G" suffix “H”
•Halogen
Moisture
Sensitivity
Level
1 code suffix "H"
Halogen free
product for
packing
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
DEVICE MARKING AND ORDERING INFORMATION
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Device
Marking
Method 2026
2SC2411KQLT1
CQband
Polarity
: Indicated by cathode
3
COLLECTOR
0.031(0.8) Typ.
0.031(0.8) Typ.
Shipping
1
BASE
3000/Tape&Reel
•
2SC2411KRLT1
CR
Position : Any
• Mounting
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
2
EMITTER
3000/Tape&Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25℃ ambient
temperature
otherwise specified.
MAXIMUM
RATINGS
(TA = 25unless
°C)
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
Limits
Unit
For capacitive load, derate current by 20%
Collector-base voltage
VCBO
40
V
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL
RATINGS
Collector-emitter
voltage
VCEO FM120-MH
32FM130-MH FM140-MH
V
MarkingEmitter-base
Code
voltage
VEBO
V14
12 5 13
15
16
18
10
115
120
20 0.5 30
50
60
80
100
150
200
Maximum
Recurrent
Peak Reverse Voltage
Vo
VRRM
Collector
current
IC
A*40
Collector
power dissipation
Maximum
RMS Voltage
Junction
temperature
Maximum
DC Blocking
Voltage
Storage temperature
Maximum Average Forward Rectified Current
35
42
56
70
105
140
Vo
50
60
80
100
150
200
Vo
1.0
30
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
ELECTRICAL
CHARACTERISTICS(T
A = 25°C)
superimposed
on rated load
(JEDEC method)
TypicalCollector-base
Junction Capacitance
(Note 1)
breakdown
voltage
Tstg
IO
W28
°C40
°C
*PC must not be exceeded.
Parameter
Typical Thermal
Resistance (Note 2)
14 0.2 21
20 150 30
-55~+150
PC
VRMS
j
VT
DC
Operating
Temperature Range
Collector-emitter
breakdown voltage
StorageEmitter-base
Temperature breakdown
Range
voltgae
Symbol
RΘJA Min.
BVCBOCJ
BVCEOTJ
TSTG
BVEBO
ICBO
SYMBOL
IEBO
h VF
Collector cutoff current
CHARACTERISTICS
Emitter cutoff
current
Maximum
1.0A DC
DCForward
currentVoltage
transferatratio
FE
Maximum
Average Reverse
Current atvoltage
@T A=25℃ V
Collcetor-emitter
saturation
CE(sat)IR
@T A=125℃ f
Rated DC
Blockingfrequency
Voltage
Transition
T
Output capacitance
Cob
NOTES:
Typ Max.
Unit
-
Am
Am
Conditions
40
I120
=100µA
℃/
P
40
V
C
I =1mA
-55-to +125 -55 to +150
℃
32
V
C
- 65I to
+175
℃
5
V
=100µA
E
1
µA
VCB=20V
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
1
µA
VEB=4V
Vo
0.9
0.92
0.85
2
- 0.50 390
- 0.70
V =3V ,I =100mA
CE
-
250
6.0
0.4
-
V
MHz
pF
C
IC0.5
/IB=500mA/50mA
V10=5V,I =-20mA,f=100MHz
CE
mA
E
VCB=10V,IE=0A,f=1MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
hFE values are classified as follows:
Item
hFE
2012-06
2012-
Q
R
120~270 180~390
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2411KxLT1THRU
Medium Power Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
power dissipation
offers
• Batch process design, excellentElectrical
characteristic
curves(TA = 25°C)
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
0.146(3.7)
0.130(3.3)
Ta = 25 C
O
0.45m
A
0.50m
A
25 C/228
55 OC
MIL-STD-19500
•5RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
10
2
Mechanical
data
1
• Epoxy : UL94-V0 rated flame retardant
0.5
0.012(0.3) Typ.
0.40mA
5mA
0.30.071(1.8)
C
COLLECTOR CURRENT : I (mA)
100
C
COLLECTOR CURRENT : I (mA)
• Low power loss, high efficiency.
1000
capability, low forward voltage drop.
• High
VCEcurrent
=6V
500
• High surge capability.
200• Guardring for overvoltage protection.
100• Ultra high-speed
Ta=100OCswitching.
50
• Silicon epitaxial planar chip, metal silicon junction.
25OC
80OCmeet environmental standards
of
• Lead-free parts
20
O
0.056(1.4)
0.30mA
0.25mA
50
0.20mA
0.15mA
0.040(1.0)
0.10mA
0.024(0.6)
0.05mA
• Case : Molded plastic, SOD-123H
0.2
• Terminals :Plated terminals, solderable per MIL-STD-750
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.031(0.8) Typ.
,
0
Method 2026
0
0.031(0.8) Typ.
1
2
I B = 0A
4
3
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
TO EMITTER
VOLTAGE
: VBE(V)
• Polarity : BASE
Indicated
by cathode
band
Fig.1 Grounded
Positionemitter
: Any propagation characteristics
• Mounting
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Fig.2
Grounded emitter output characteristics(I)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
500 RMS Voltage
Maximum
VRMS O
14
21
VDC
20
30
Maximum DC Blocking Voltage
2mAIO
Maximum
400 Average Forward Rectified Current
1.8mA
1.6mA
Peak Forward Surge Current 8.3 ms single half sine-wave
1.4mA
IFSM
1.2mA
superimposed
on rated load (JEDEC method)
300
1.0mA
Typical Thermal Resistance (Note 2)
RΘJA
0.8mA
Typical Junction Capacitance (Note 1)
CJ
200
0.6mA
Operating Temperature Range
TJ
C
COLLECTOR CURRENT : I (mA)
Storage Temperature Range
Ta = 25 C
100
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0
0
1
2 at @T
3 A=25℃4
Maximum Average
Reverse
Current
TSTG
0.4mA
NOTES:
Fig.3
F 0A
IV
B=
5
IR
Grounded emitter output characteristics(II)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
1
28
O
15
50
16
60
18
80
10
100
115
150
120
200
V
35
42
56
70
105
140
V
60
80
100
150
200
V
Ta = 25 C
l40
C /l B = 10 50
0.5
1.0
30
A
A
0.2
40
120
0.1
-55 to +125
℃
-55 to +150
- 65 to +175
0.05
0.2mA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL
@TVOLTAGE
A=125℃: VCE(V)
Rated DC Blocking Voltage
COLLECTOR TO EMITTER
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.50
0.02
0.5
0.70
1
2
5
0.9
0.85
10
20
0.5
50
100
200
0.92
500 1000
10
V
m
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.4 Collector-emitter saturation voltage vs. collector current
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2411KxLT1THRU
Medium Power Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage currentElectrical
and thermal characteristic
resistance.
• Low profile surface mounted application in order to
curves(TA = 25°C)
SOD-123H
optimize board space.
200
100
50
20
10
0.1
•
50
MIL-STD-19500
/228
O
C
25product
RoHS
for packing code suffix "G"
O
0 Cfree product for packing code suffix "H"
Halogen
O
25 C
OC
50
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.2
0.5
1
2
5
10
Method
2026
20
50 100 200
0.012(0.3) Typ.
O
Ta = 25 C
V CE = 5V
0.071(1.8)
0.056(1.4)
T
500
0.146(3.7)
0.130(3.3)
500
TRANSITION FREQUENCY : f (MHz)
DC CURRENT GAIN : h FE
1000
• Low power loss, high efficiency.
drop.
• High current capability, low forward voltage
V CE = 3V
• High surge capability.
• Guardring for overvoltage protection.
switching.
• Ultra high-speed
O
= 100 C
•TaSilicon
O epitaxial planar chip, metal silicon junction.
75 C
parts meet environmental standards of
• Lead-free
O
C
200
100
0.040(1.0)
0.024(0.6)
50
0.031(0.8) Typ.
500 1000
0.5
CURRENT
(mA)
• Polarity : COLLECTOR
Indicated by
cathode: ICband
Fig.5 Position
DC current
gain vs. collector current
: Any
• Mounting
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
1
2
5
10
20
50
EMITTER inCURRENT
(mA)
Dimensions
inches and: I(millimeters)
E
Fig.6 Gain bandwidth product vs. emitter current
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
Marking Code
50
Maximum RMS Voltage
Maximum DC Blocking Voltage
: Cib(pF)
Maximum Recurrent Peak Reverse Voltage
VRRM
13
30
14 Ta = 25
15 C
40 f = 1MHz
50
16
60
18
80
10
100
115
150
120
200
V
VRMS
14
21
42
56
70
105
140
V
Cib 20
28 I C = 0A
35
30
40
60
80
100
150
200
V
VDC
20
IO
IFSM
EMITTER INPUT CAPACITANCE
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
10
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1
A
℃
-55 to +150
- 65 to +175
20
50
COLLECTOR TO BASE VOLTAGE : VCE(V)
VF
0.50
EMITTER TO BASE VOLTAGE: VEB(V)
0.70
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2012-06
-55 to +125
A
2
5
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Fig.7
@T A=125℃
2- Thermal Resistance From Junction to Ambient
40
120
TSTG
NOTES:
2012-
CJ
50
Cob
TJ
2
0.5
I E =0A
1.0
30
RΘJA
5
O
12
20
IR
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
0.85
0.9
0.92
0.5
10
V
m
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2411KxLT1THRU
Medium Power Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOT-23
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts meet environmental standards
.122(3.10)
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
.063(1.60)
.047(1.20)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G" .106(2.70)
Halogen free product for packing code suffix "H"
Mechanical data
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.008(0.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.080(2.04)
.070(1.78)
RATINGS
.083(2.10)
0.031(0.8) Typ.
.110(2.80)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
TSTG
CHARACTERISTICS
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
40
120
-55 to +125
A
A
℃
-55 to +150
.020(0.50)
.012(0.30)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Storage Temperature Range
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
0.012(0.3) Typ.
@T A=125℃
0.50
- 65 to +175
0.70
0.85
0.9
0.92
0.5
IR
Dimensions in inches and (millimeters)
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2411KxLT1
THRU
Medium Power Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
voltage drop.
• High current capability,
(2) low forward
(1)
Tape&Reel: 3 Kpcs/Reel surge capability. LT1 G ‐WS • High 2SC2411K x
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
(2) CLASSIFICATION OF h
FE RANK epitaxial planar chip, metal
silicon junction.
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum which may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximum and do vary in different applications and actual performance may vary over time. RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, P
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
℃
- 65 to +175
Storage Temperature
Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mA
10
@T A=125℃
Rated DC such applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Similar pages