WILLAS FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile NPN silicon optimize board space. FEATURE • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) low forward voltage drop. • High current ƽEpitaxial planar capability, type • High surge capability. ƽComplementary 2SA1036K protection. overvoltage • Guardring for to Ultra high-speed ƽ•We declare that theswitching. material of product compliance with RoHS requirements. Silicon epitaxial chip, metal silicon junction. •Pb-Free packageplanar is available Lead-free parts meet environmental standards of •RoHS product for packing code suffix ”G” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT– 23 MIL-STD-19500 /228 free product for code packing code RoHS product for packing suffix "G" suffix “H” •Halogen Moisture Sensitivity Level 1 code suffix "H" Halogen free product for packing Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H DEVICE MARKING AND ORDERING INFORMATION , • Terminals :Plated terminals, solderable per MIL-STD-750 Device Marking Method 2026 2SC2411KQLT1 CQband Polarity : Indicated by cathode 3 COLLECTOR 0.031(0.8) Typ. 0.031(0.8) Typ. Shipping 1 BASE 3000/Tape&Reel • 2SC2411KRLT1 CR Position : Any • Mounting • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 2 EMITTER 3000/Tape&Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature otherwise specified. MAXIMUM RATINGS (TA = 25unless °C) Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol Limits Unit For capacitive load, derate current by 20% Collector-base voltage VCBO 40 V FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL RATINGS Collector-emitter voltage VCEO FM120-MH 32FM130-MH FM140-MH V MarkingEmitter-base Code voltage VEBO V14 12 5 13 15 16 18 10 115 120 20 0.5 30 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Vo VRRM Collector current IC A*40 Collector power dissipation Maximum RMS Voltage Junction temperature Maximum DC Blocking Voltage Storage temperature Maximum Average Forward Rectified Current 35 42 56 70 105 140 Vo 50 60 80 100 150 200 Vo 1.0 30 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM ELECTRICAL CHARACTERISTICS(T A = 25°C) superimposed on rated load (JEDEC method) TypicalCollector-base Junction Capacitance (Note 1) breakdown voltage Tstg IO W28 °C40 °C *PC must not be exceeded. Parameter Typical Thermal Resistance (Note 2) 14 0.2 21 20 150 30 -55~+150 PC VRMS j VT DC Operating Temperature Range Collector-emitter breakdown voltage StorageEmitter-base Temperature breakdown Range voltgae Symbol RΘJA Min. BVCBOCJ BVCEOTJ TSTG BVEBO ICBO SYMBOL IEBO h VF Collector cutoff current CHARACTERISTICS Emitter cutoff current Maximum 1.0A DC DCForward currentVoltage transferatratio FE Maximum Average Reverse Current atvoltage @T A=25℃ V Collcetor-emitter saturation CE(sat)IR @T A=125℃ f Rated DC Blockingfrequency Voltage Transition T Output capacitance Cob NOTES: Typ Max. Unit - Am Am Conditions 40 I120 =100µA ℃/ P 40 V C I =1mA -55-to +125 -55 to +150 ℃ 32 V C - 65I to +175 ℃ 5 V =100µA E 1 µA VCB=20V FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 1 µA VEB=4V Vo 0.9 0.92 0.85 2 - 0.50 390 - 0.70 V =3V ,I =100mA CE - 250 6.0 0.4 - V MHz pF C IC0.5 /IB=500mA/50mA V10=5V,I =-20mA,f=100MHz CE mA E VCB=10V,IE=0A,f=1MHz 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient hFE values are classified as follows: Item hFE 2012-06 2012- Q R 120~270 180~390 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2411KxLT1THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features power dissipation offers • Batch process design, excellentElectrical characteristic curves(TA = 25°C) better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. 0.146(3.7) 0.130(3.3) Ta = 25 C O 0.45m A 0.50m A 25 C/228 55 OC MIL-STD-19500 •5RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 10 2 Mechanical data 1 • Epoxy : UL94-V0 rated flame retardant 0.5 0.012(0.3) Typ. 0.40mA 5mA 0.30.071(1.8) C COLLECTOR CURRENT : I (mA) 100 C COLLECTOR CURRENT : I (mA) • Low power loss, high efficiency. 1000 capability, low forward voltage drop. • High VCEcurrent =6V 500 • High surge capability. 200• Guardring for overvoltage protection. 100• Ultra high-speed Ta=100OCswitching. 50 • Silicon epitaxial planar chip, metal silicon junction. 25OC 80OCmeet environmental standards of • Lead-free parts 20 O 0.056(1.4) 0.30mA 0.25mA 50 0.20mA 0.15mA 0.040(1.0) 0.10mA 0.024(0.6) 0.05mA • Case : Molded plastic, SOD-123H 0.2 • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.031(0.8) Typ. , 0 Method 2026 0 0.031(0.8) Typ. 1 2 I B = 0A 4 3 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) TO EMITTER VOLTAGE : VBE(V) • Polarity : BASE Indicated by cathode band Fig.1 Grounded Positionemitter : Any propagation characteristics • Mounting • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Fig.2 Grounded emitter output characteristics(I) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 500 RMS Voltage Maximum VRMS O 14 21 VDC 20 30 Maximum DC Blocking Voltage 2mAIO Maximum 400 Average Forward Rectified Current 1.8mA 1.6mA Peak Forward Surge Current 8.3 ms single half sine-wave 1.4mA IFSM 1.2mA superimposed on rated load (JEDEC method) 300 1.0mA Typical Thermal Resistance (Note 2) RΘJA 0.8mA Typical Junction Capacitance (Note 1) CJ 200 0.6mA Operating Temperature Range TJ C COLLECTOR CURRENT : I (mA) Storage Temperature Range Ta = 25 C 100 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0 0 1 2 at @T 3 A=25℃4 Maximum Average Reverse Current TSTG 0.4mA NOTES: Fig.3 F 0A IV B= 5 IR Grounded emitter output characteristics(II) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 1 28 O 15 50 16 60 18 80 10 100 115 150 120 200 V 35 42 56 70 105 140 V 60 80 100 150 200 V Ta = 25 C l40 C /l B = 10 50 0.5 1.0 30 A A 0.2 40 120 0.1 -55 to +125 ℃ -55 to +150 - 65 to +175 0.05 0.2mA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL @TVOLTAGE A=125℃: VCE(V) Rated DC Blocking Voltage COLLECTOR TO EMITTER COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.50 0.02 0.5 0.70 1 2 5 0.9 0.85 10 20 0.5 50 100 200 0.92 500 1000 10 V m COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.4 Collector-emitter saturation voltage vs. collector current 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2411KxLT1THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage currentElectrical and thermal characteristic resistance. • Low profile surface mounted application in order to curves(TA = 25°C) SOD-123H optimize board space. 200 100 50 20 10 0.1 • 50 MIL-STD-19500 /228 O C 25product RoHS for packing code suffix "G" O 0 Cfree product for packing code suffix "H" Halogen O 25 C OC 50 Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.2 0.5 1 2 5 10 Method 2026 20 50 100 200 0.012(0.3) Typ. O Ta = 25 C V CE = 5V 0.071(1.8) 0.056(1.4) T 500 0.146(3.7) 0.130(3.3) 500 TRANSITION FREQUENCY : f (MHz) DC CURRENT GAIN : h FE 1000 • Low power loss, high efficiency. drop. • High current capability, low forward voltage V CE = 3V • High surge capability. • Guardring for overvoltage protection. switching. • Ultra high-speed O = 100 C •TaSilicon O epitaxial planar chip, metal silicon junction. 75 C parts meet environmental standards of • Lead-free O C 200 100 0.040(1.0) 0.024(0.6) 50 0.031(0.8) Typ. 500 1000 0.5 CURRENT (mA) • Polarity : COLLECTOR Indicated by cathode: ICband Fig.5 Position DC current gain vs. collector current : Any • Mounting • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 1 2 5 10 20 50 EMITTER inCURRENT (mA) Dimensions inches and: I(millimeters) E Fig.6 Gain bandwidth product vs. emitter current MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Marking Code 50 Maximum RMS Voltage Maximum DC Blocking Voltage : Cib(pF) Maximum Recurrent Peak Reverse Voltage VRRM 13 30 14 Ta = 25 15 C 40 f = 1MHz 50 16 60 18 80 10 100 115 150 120 200 V VRMS 14 21 42 56 70 105 140 V Cib 20 28 I C = 0A 35 30 40 60 80 100 150 200 V VDC 20 IO IFSM EMITTER INPUT CAPACITANCE Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 10 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1 A ℃ -55 to +150 - 65 to +175 20 50 COLLECTOR TO BASE VOLTAGE : VCE(V) VF 0.50 EMITTER TO BASE VOLTAGE: VEB(V) 0.70 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-06 -55 to +125 A 2 5 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Fig.7 @T A=125℃ 2- Thermal Resistance From Junction to Ambient 40 120 TSTG NOTES: 2012- CJ 50 Cob TJ 2 0.5 I E =0A 1.0 30 RΘJA 5 O 12 20 IR Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 0.85 0.9 0.92 0.5 10 V m WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2411KxLT1THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .122(3.10) 0.146(3.7) 0.130(3.3) .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .106(2.70) Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .080(2.04) .070(1.78) RATINGS .083(2.10) 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range TSTG CHARACTERISTICS VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 40 120 -55 to +125 A A ℃ -55 to +150 .020(0.50) .012(0.30) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Storage Temperature Range Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) 0.012(0.3) Typ. @T A=125℃ 0.50 - 65 to +175 0.70 0.85 0.9 0.92 0.5 IR Dimensions in inches and (millimeters) 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) voltage drop. • High current capability, (2) low forward (1) Tape&Reel: 3 Kpcs/Reel surge capability. LT1 G ‐WS • High 2SC2411K x Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon (2) CLASSIFICATION OF h FE RANK epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum which may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum and do vary in different applications and actual performance may vary over time. RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA 10 @T A=125℃ Rated DC such applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.