2SC2412KxLT1(SOT 23)

WILLAS
FM120-M+
2SC2412KxLT1THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
NPN Silicon
declare that the material of product
• WeFeatures
Package
compliance with RoHS requirements.
outline
Pb-Free
packagedesign,
is available
excellent power dissipation offers
• Batch process
RoHS
product
forleakage
packingcurrent
code suffix
”G” resistance.
better
reverse
and thermal
SOD-123H
surface mounted
application
in order
• Low profile
Halogen
free product
for packing
code suffix
“H” to
optimize board space.
Moisture Sensitivity Level 1
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
ORDERING
INFORMATION
capability, low forward voltage drop.
• High current
0.012(0.3) Typ.
• High surge capability.
Marking
Shipping
Guardring for overvoltage
protection.
•Device
Ultra
high-speed
switching.
•
3000 Tape & Reel
BQ
2SC2412KQLT1
• Silicon epitaxial planar chip, metal silicon junction.
BR
3000 of
Tape & Reel
2SC2412KRLT1
standards
• Lead-free parts meet environmental
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
2SC2412KSLT1
3000 Tape & Reel
code suffix "G"
• RoHS product for packing G1F
Halogen free product for packing code suffix "H"
Mechanical
MAXIMUM
RATINGS
SOT– 23
data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Rating
Symbol
Value
Unit
• Case : Molded plastic, SOD-123H
,
50
V
Collector–Emitter Voltage
CEO
• Terminals :Plated terminals,V solderable
per MIL-STD-750
Collector–Base Voltage
Method 2026
V CBO
• Polarity :Voltage
Indicated by cathode
Emitter–Base
V EBOband
Position
: Any
• Mounting
Collector
Current
— Continuous
IC
•
Weight : Approximated 0.011 gram
Collector power dissipation
PC
Junction temperature
MAXIMUM
60
V
7.0
V
150
mAdc
0.2
W
0.031(0.8) Typ.
0.031(0.8) Typ.
3
COLLECTOR
1
BASE
Dimensions in inches and (millimeters)
2
EMITTER
150
°C
T j AND ELECTRICAL
RATINGS
CHARACTERISTICS
Ratings
at 25℃
ambient temperature unless
specified.
-55 ~+150
°C
Storage
temperature
T stg otherwise
Single phase half wave, 60Hz, resistive of inductive load.
DEVICE MARKING
For capacitive load, derate current by 20%
2SC2412KQLT1=BQ
2SC2412KRLT1 =BRSYMBOL
2SC2412KSLT1
=G1F
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking
Code
12
13
noted.)
ELECTRICAL
CHARACTERISTICS (TA = 25°C unless otherwise
20
30
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
Characteristic
VRMS
Collector–Emitter Breakdown Voltage
Maximum DC Blocking Voltage
VDC
(IC = 1 mA)
Symbol
14
21
V
20 (BR)CEO 30
Min
14
40
28
50 40
15
50
Typ
35
—50
16
60
Max
42
—
60
18
80
Unit
56
V80
10
100
115
150
120
200
V
70
105
140
V
100
150
200
V
IO
1.0
Emitter–Base Breakdown Voltage
7
—
— V
V (BR)EBO
(IE = 50Surge
µA) Current 8.3 ms single half sine-wave
Peak Forward
30
IFSM
Collector–Base
Breakdown
Voltage
superimposed
on rated load
(JEDEC method)
60
—
—
V
V (BR)CBO
(ICThermal
= 50 µA)
40
Typical
Resistance (Note 2)
RΘJA
—
Collector
Current(Note 1)
Typical
JunctionCutoff
Capacitance
CJ
—
0.1 120 µA
I CBO
(VCB Temperature
= 60 V)
-55 to +125
-55 to +150
Operating
Range
TJ
Emitter
cutoff current
- 65 to +175
Storage
Temperature
Range
TSTG
—
—
0.1
µA
I EBO
(VEB = 7 V)
Collector-emitter
saturation voltage
FM130-MH —
FM140-MH FM150-MH
FM160-MH
FM180-MH
FM1100-MH FM1150-MH FM1200-MH
CHARACTERISTICS
SYMBOL FM120-MH
—
0.4
V
V CE(sat)
(IC/ IForward
/ 5matA)
0.9
B = 50 mA
Maximum
Voltage
1.0A DC
0.92
VF
0.50
0.70
0.85
DC current
ratio
h FE
120
––
560 0.5 ––
Maximum
Averagetransfer
Reverse
Current at @T A=25℃
IR
= 6 V, IVoltage
C= 1mA)
10
@T A=125℃
Rated(V
DCCEBlocking
Transition frequency
—
180
––
MHz
fT
NOTES:
(V CE = 12 V, I E= – 2mA, f =30MHz )
1- Measured
1 MHZ and applied reverse voltage of 4.0 VDC.
Outputatcapacitance
—
2.0
3.5
pF
C ob
2- Thermal
Resistance
Junction to Ambient
(V CB = 12 V, I From
E= 0A, f =1MHz )
Maximum Average Forward Rectified Current
A
A
℃
U
V
m
h FE values are classified as follows:
*
hFE
2012-06
2012-
Q
120~270
R
180~390
S
270~560
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2412KxLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
process emitter
design, excellent
power
dissipation offers
• Batch
Fig.1
Grounded
propagation
characteristics
Fig.2 Grounded emitter output characteristics( )
SOD-123H
0.50mA
100
T A = 25°C
0.146(3.7)
0.130(3.3)
I C, COLLECTOR CURRENT (mA)
25°C
– 55°C
T A = 100°
C
I C, COLLECTOR CURRENT (mA)
better reverse leakage current and thermal resistance.
profile surface mounted application in order to
• Low
50
VCE= 6 V
optimize board space.
power loss, high efficiency.
• Low
20
• High current capability, low forward voltage drop.
10
• High surge capability.
50
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
2
epitaxial planar chip, metal silicon junction.
• Silicon
parts meet environmental standards of
• Lead-free
1
MIL-STD-19500 /228
product for packing code suffix "G"
0.5
• RoHS
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
80
60
0.071(1.8)
0.056(1.4)
40
20
0.2
Mechanical
data
0.1
: UL94-V0 rated flame retardant
• Epoxy
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
plastic, SOD-123H
• Case : Molded
V BE , BASE TO EMITTER VOLTAGE(V)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0
0
Method 2026
I C, COLLECTOR CURRENT (mA)
Dimensions in inches and (millimeters)
h FE, DC CURRENT GAIN
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
16
VDC
2020
30
0
4
Maximum DC 0Blocking Voltage
100
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Recurrent Peak Reverse Voltage
8
12
20
10
0.2
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
150
200
Vo
40
0.5
Maximum Average Forward
Rectified Current
IO (V)
V CE , COLLECTOR
TO EMITTER VOLTAGE
superimposed on rated load (JEDEC method)
TSTG
h FE, DC CURRENT GAIN
CHARACTERISTICS
VF
Reverse Current at @T A=25℃
IR
@T A=125℃
50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
20
10
0.2
0.5
1
2
5
10
20
50
I C, COLLECTOR CURRENT (mA)
2012-06
200
A
A
℃
120
P
-55 to +150
℃
- 65 to +175
℃
0.2
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Storage Temperature Range
100
100
Fig.6 Collector-emitter saturation voltage vs.
40
collector current 0.5
-55 to +125
TJ
Operating500
Temperature Range
50
I C, COLLECTOR1.0
CURRENT (mA)
CJ
Typical Junction Capacitance (Note 1)
80
20
10
30
RΘJA
Typical Thermal Resistance (Note 2)
Maximum100
Average
605
2
Fig.5 DC current gain vs. collector current ( )
200
150
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
2012-
0.040(1.0)
0.024(0.6)
2.0
8
Marking Code
2
1.6
500
6
Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
4
NOTES:
1.2
Fig.4 DC current gain vs. collector current ( )
• Polarity : Indicated by cathode band
10
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.8
V
, COLLECTOR
TO EMITTER VOLTAGE (V) 0.031(0.8) Typ.
0.031(0.8)
Typ.
CE
Fig.3 Grounded emitter output characteristics( )
0.4
100
200
0.50
0.70
0.1
0.9
0.85
0.5
0.92
mA
10
0.05
V
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2412KxLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Fig.7 Collector-emitter saturation voltage vs.
optimize boardcollector
space. current ( )
SOD-123H
power loss, high efficiency.
• Low
0.5
• High current capability, low forward voltage drop.
• High surge capability.
0.2
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.1
• Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
0.05
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical
data
0.02
• Epoxy : UL94-V0 rated flame retardant
0.01
: Molded plastic, SOD-123H
• Case
,
0.2
0.5
1
2
5
10
20
50
100
200
• Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
• Low profile surface mounted application in order to
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.146(3.7)
0.130(3.3)
0.5
0.2
0.071(1.8)
0.056(1.4)
0.1
0.05
0.02
0.040(1.0)
0.024(0.6)
0.01
0.031(0.8) Typ.
0.2
0.5
I C, COLLECTOR
CURRENT (mA)
Method
2026
RATINGS
200
VRRM
12
20
13
30
21
30
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
100
RMS
Voltage
50
–0.5
–1
–10
–20
Peak Forward Surge
Current
8.3–2ms single–5half sine-wave
superimposed on rated load I(JEDEC
method)
, EMITTER
CURRENT (mA)
E
–50
–100
50
100
10
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
50
60
80
100
150
200
Vo
2
40
0.2
0.5
C c-r bb, BASE COLLECTOR TIME CONSTANT( ps)
A
2
5
10
20
A
50
40 TO BASE VOLTAGE (V)
V EB, EMITTER
120
Typical Junction
(Note 1)time constant vs.emitter
CJ
Fig.11Capacitance
Base-collector
current
-55 to +125
Operating Temperature Range
TJ
Storage Temperature Range
1.0
1
30
1
V CB, COLLECTOR TO BASE VOLTAGE (V)
RΘJA
Typical Thermal Resistance (Note 2)
℃
P
-55 to +150
℃
- 65 to +175
TSTG
℃
200
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
100
Maximum Forward
Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking
Voltage
50
NOTES:
20
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
5
Maximum Recurrent Peak Reverse Voltage
10
20
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
500
Marking Code
5
Dimensions in inches and (millimeters)
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
f r , TRANSITION FREQUENCY(MHz)
2
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Maximum
0.031(0.8) Typ.
1
I C, COLLECTOR CURRENT (mA)
• Polarity : Indicated by cathode band
Gain
bandwidth
Mounting
Position
: Any product vs. emitter current
•Fig.9
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
0.50
0.70
0.85
0.5
IR
0.9
0.92
V
10
mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
20
2- Thermal Resistance From Junction to Ambient
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2412KxLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to SOT-23
SOD-123H
optimize board space.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.122(3.10)
• Lead-free parts meet environmental standards of
.106(2.70)
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
Mechanical data
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.008(0.20)
.080(2.04)
.070(1.78)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
CHARACTERISTICS
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
NOTES:
-55 to +125
40
120
A
A
℃
P
-55 to +150
- 65 to +175
TSTG
.020(0.50)
.012(0.30)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Storage Temperature Range
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.083(2.10)
.110(2.80)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
Dimensions in inches and (millimeters)
10
V
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC2412KxLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Features
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
high efficiency.
• Low power loss,Device PN Packing 0.146(3.7)
0.130(3.3)
voltage drop.
• High current capability,
(2) low forward
(1)
2SC2412K x
Tape&Reel: 3 Kpcs/Reel capability. LT1 G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
(2) epitaxial
CLASSIFICATION OF h
FE RANK planar chip, metal
silicon junction.
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Volt
VRRM
Volt
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. Volt
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amp
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
on rated load (JEDEC method)
superimposed
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150
Operating Temperature
Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking
Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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