2SA1213 (SOT-89)

2SA1213
SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT-89
FEATURES
z
z
z
z
Small Flat Package
Power Amplifier and Switching Applications
Low Saturation Voltage
High Speed Switching Time
z
Pb-Free package is available
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-2
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-100
nA
DC current gain
hFE
VCE=-2V, IC=-500mA
70
VCE=-2V, IC=-2A
20
240
Collector-emitter saturation voltage
VCE(sat)
IC=-1A,IB=-50mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-1A,IB=-50mA
-1.2
V
Collector output capacitance
Cob
Transition frequency
fT
40
VCB=-10V,IE=0, f=1MHz
VCE=-2V,IC= -0.5A
100
pF
MHz
CLASSIFICATION OF hFE
2012-0
RANK
O
Y
RANGE
70–140
120–240
MARKING
NO
NY
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1213
SOT-89 Plastic-Encapsulate Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
FE
1000
C
COMMON
design, excellent power
dissipation
offers
EMITTER
-6mA
Ta=25 ℃
leakage current and thermal
resistance.
-5.4mA
COMMON EMITTER
VCE=-2V
better reverse
-800
-4.8mA
surface mounted application
in order to
• Low profile
-4.2mA
optimize board space.
-3.6mA
loss, high efficiency.
• Low power
-600
drop.
• High current capability, low forward voltage-3mA
• High surge capability.
-2.4mA
-400
for overvoltage protection.
• Guardring
-1.8mA
• Ultra high-speed switching.
-1.2mA
• Silicon-200epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
I =-600uA
MIL-STD-19500 /228
-0
-0.0
-0.5 packing
-1.0 code
-1.5 suffix
-2.0
-3.0
-3.5
for
"G" -2.5
• RoHS product
COLLECTOR-EMITTER
VOLTAGE
Halogen free product
for packing code
suffixVCE"H"(V)
SOD-123H
300
Ta=100 ℃
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
IC
(mA)
Pb Free Product
Package outline
h
—— I
Static Characteristic
-1000
• Batch process
THRU
Ta=25 ℃
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
100
0.071(1.8)
0.056(1.4)
30
B
——
BEsat
-1000
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (mV)
Method 2026
IC
Ta=100 ℃
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
-10
VCEsat
-1000
β=20
Ratings at 25℃ ambient temperature unless otherwise specified.
-200
-1
-10
-100
-1000
-3
Single phase half wave,
60Hz,
resistive
of-30inductive
load. -300
COLLECTOR CURRENT IC (mA)
For capacitive load, derate current by 20%
VBE
Ta=100 ℃
-30
Maximum RMS Voltage
VRMS
14
21
VDC
20
30
COLLECTOR CURRENT
IC
Maximum DC Blocking Voltage
-100
Ta=100 ℃
IO
Maximum Average-30Forward Rectified Current
℃
Ta=25
IFSM
-10
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature
Range
-1
TJ
-0.4
-0.6
BASE-EMITTER VOLTAGE
P
600
CHARACTERISTICSC
——
Ta
VBE
COLLECTOR POWER DISSIPATION
PC (mW)
NOTES:
-30
-10
-300
-100
IC
300
14
40
15
50
16
60
18
80
28
35
42
56
40
50
60
80
Cib
-1000
(mA)
30
-0.8
-1.0
-0.1
115
150
120
200
Volts
70
105
140
Volts
100
150
200
Volts
Amps
Amps
40
120
-55 to +125
10
VCE=-2V
f=1MHz
10
IE=0/IC=0
100
Ta=25 ℃
1.0
Cob30
100
TSTG
(V)
VF
Maximum Average500Reverse Current at @T A=25℃
0.50
-0.3
℃/W
PF
-55 to +150
-1
-10
-3
- 65 to
+175
REVERSE
VOLTAGE
0.70
V
℃
-20
℃
(V)
0.85
0.5
IR
@T A=125℃
Rated DC Blocking Voltage
-3
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
RΘJA
Typical Thermal Resistance
(Note 2)
-3
-0.2
β=20
(pF)
13
30
(mA)
12
20
-0.0
Ta=25 ℃
COLLECTOR CURRENT
VRRM
Storage Temperature Range
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
-100
-1
Maximum Recurrent
-300 Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
0.040(1.0)
0.024(0.6)
Cob/Cib —— VCB/VEB
FM140-MH FM150-MH
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH1000
Marking Code
IC
0.031(0.8) Typ.
C
——
-2000
(mA)
-10
CAPACITANCE
IC
RATINGS
-1000
——
-1000
-500
IC
-300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-100
-30
COLLECTOR CURRENT
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
T =25 ℃
,
• Terminals :Plated terminals, solderable per MIL-STD-750
a
-3
-1
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
Mechanical dataV
10
0.9
0.92
Volts
10
mAmps
400
1- Measured at 1 MHZ
300 and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
200
100
0
0
25
50
75
AMBIENT TEMPERATURE
2012-06
2012-0
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1213
THRU
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
FM1200-M+
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.181(4.60)
Halogen free product for packing code
suffix "H"
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable
per MIL-STD-750
.061REF
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
Method 2026
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
.102(2.60)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH
.091(2.30)
RATINGS
.154(3.91)
Marking
Code
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TJ
TSTG
13
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
14
21
28
35
42
56
70
105
140
Volts
20
30
40
50
60
80
100
150
200
Volts
1.0
30
40
120
-55 to +125
.197(0.52)
.013(0.32)
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
.017(0.44)
.014(0.35)
.118TYP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
(3.0)TYP
0.92
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
12
.023(0.58)
20
30
.016(0.40)
@T A=125℃
IR
0.5
℃
UNIT
Volts
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1213
THRU
SOT-89 Plastic-Encapsulate Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Pb Free Product
Package outline
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Ordering
Information: 0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
0.012(0.3) Typ.
low
forward
voltage
drop.
• High current capability,
Device PN Packing • High surge capability.
(3)
2SA1213 x
–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage protection.
• Guardring
0.071(1.8)
Ultra high-speed
switching.
• Note: (1)
CASE:SOT‐89 0.056(1.4)
• Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
(3) CLASSIFICATION OF hFE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Marking Codefor any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
contained are intended to provide a product description only. "Typical" parameters Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volts
Maximum DCwhich may be included on WILLAS data sheets and/ or specifications can Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Amps
Maximum Average
Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward WILLAS does not assume any liability arising out of the application or Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
use of any product or circuit. RΘJA
℃/W
40
Typical Thermal Resistance (Note 2)
PF
120
Typical Junction
CJ
Capacitance (Note 1)
-55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
applications where a failure or malfunction of component or circuitry may directly Volts
0.9
Maximum Forward
Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average
Reverse Current at @T A=25℃
or indirectly cause injury or threaten a life without expressed written approval IR
mAmps
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance
From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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