2SB1132(SOT 89)

WILLAS
FM120-M+
2SB1132THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
TRANSISTOR
(PNP)design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
z
Lowoptimize
VCE(sat)board space.
Low power loss, high efficiency.
•
z
Pb-Free
package
is available
capability, low forward voltage drop.
• High current
surge capability.
• Highproduct
RoHS
for packing code suffix ”G”
• Guardring for overvoltage protection.
Halogen
free product
for packing code suffix “H”
switching.
• Ultra high-speed
Silicon
epitaxial
planar
chip,
silicon junction.
•
z
Moisture Sensitivity Level metal
1
• Lead-free parts meet environmental standards of
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
0.012(0.3) Typ.
1
0.071(1.8)
0.056(1.4)
2
3. EMITTER
MIL-STD-19500 /228
MAXIMUM
(Ta=25
℃ unless
product for packing
code
suffix "G" otherwise noted)
• RoHSRATINGS
3
Halogen free product for packing code suffix "H"
Symbol
Parameter
Mechanical
data
Value
Unit
: UL94-V0 rated
flame retardant
VCBO • Epoxy
Collector-Base
Voltage
-40
V
: Molded plastic, Voltage
SOD-123H
VCEO • CaseCollector-Emitter
-32
V
VEBO
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
,
0.031(0.8) Typ.
• Terminals
:Plated terminals, solderable per MIL-STD-750
Emitter-Base
Voltage
-5
V
IC
Method 2026
Continuous Collector Current
• Polarity : Indicated by cathode band
Pulsed
Collector Current
ICP* • Mounting
Position : Any
Collector
Power Dissipation
PC • Weight
: Approximated
0.011 gram
TJ
Tstg
Junction Temperature
-1
A
-2
A
500
mW
150
℃
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Storage Temperature
-55~150
℃
Ratings at 25℃ ambient temperature unless otherwise specified.
6LQJOHSXOVH,3
PV
Single phase half :
wave,
60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code Parameter
Symbol
15
50
16
60
Min18
Typ10
Collector-base
breakdown voltage
Maximum
RMS Voltage
12Test conditions
13
14
20
30
40
150
200
Volt
VV(BR)CBO
RMS
I14
C=-50μA,I
21E=0
28
35
42
-40 56
70
105
V 140
Volt
20
40
50
60
100
150
200
Volt
VRRM
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
VDC
Collector-emitter breakdown voltage
V(BR)CEO
IO
Emitter-base
breakdown
Peak
Forward Surge
Current 8.3 msvoltage
single half sine-wave V(BR)EBO
IFSM
Maximum Average Forward Rectified Current
30
IC=-1mA,IB=0
Collector cut-off current
I
RCBO
ΘJA
CJ
Typical Junction Capacitance (Note 1)
Emitter cut-off current
IEBO
TJ
Operating Temperature Range
Storage Temperature Range
TSTG
DC current gain
hFE
CHARACTERISTICS
VCE(sat)
VF
Maximum Average Reverse Current at @T A=25℃
Transition frequency
Collector
NOTES:
80
Max115 Unit120
IE=-50μA,IC=0
VCB=-20V,I E=0
VEB=-4V,I
C=0
-55 to
+125
-0.5
μA
-55 to +150-0.5
μA
- 65 to +175
VCE=-3V,IC=-100mA
Amp
V
40
120
V
82
Amp
℃/W
PF
℃
℃
390
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Collector-emitter saturation voltage
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
-32
100
1.0
-5
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
80
0.50
IfRT
VCE=-5V,IC=-50mA,f=30MHz
Cob
VCB=-10V,IE=0,f=1MHz
@T A=125℃
output capacitance
IC=-500mA,IB=-50mA
-0.2
0.70
-0.5
0.9
0.85
0.5
10
V
0.92
Volt
150
MHz
20
30
mAm
pF
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF hFE
Rank
Range
Marking
2012-06
2012-0
P
Q
R
82-180
120-270
180-390
BAP
BAQ
BAR
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1132THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
IC
-1000
Typical Characteristics
SOD-123+ PACKAGE
Features
• Batch process design, excellent
Package outline
1000
better
reverse leakage current and thermal resistance.
-800
optimize board space.
-3.5mA
-600
power loss, high efficiency.
• Low
-3mA
drop.
• High current capability, low forward voltage-2.5mA
-2mA
• High
-400 surge capability.
• Guardring for overvoltage protection.
-1.5mA
• Ultra high-speed switching.
-1mA
-200
epitaxial planar chip, metal silicon junction.
• Silicon
I =-0.5mA
of
• Lead-free parts meet environmental standards
Pb Free Product
IC
SOD-123H
Ta=100℃
DC CURRENT GAIN
IC
-4.5mA
in order to
• Low profile surface mounted application
-4mA
COLLECTOR CURRENT
——
COMMON
EMITTER offers
power dissipation
Ta=25℃
-5mA
hFE
(mA)
hFE
VCE
——
0.146(3.7)
0.130(3.3)
Ta=25℃
0.071(1.8)
0.056(1.4)
COMMON EMITTER
VCE=-3V
B
•
MIL-STD-19500
/228
-0
-4 packing-8code suffix
-12 "G"
-16
RoHS-0 product for
COLLECTOR-EMITTER VOLTAGE VCE (V)
Halogen free product for packing code suffix
"H"
Mechanical data
V
——
CEsat
10
-20
-1
IC
a
a
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Ta=25℃
Dimensions in inches and (millimeters)
Ta=100 ℃
-1
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
T =1
00 ℃
a
T =2
5℃
a
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
-10
IO
IFSM
CJ
Typical Junction Capacitance (Note 1)
100
-600
-900
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
VF
P
+150
℃
Ta=25℃
℃
-10
0.50
IR
-100
Ta=25 ℃
Cib
0.70
IC
(mA)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C
C
ob
2- Thermal Resistance From Junction to Ambient
10
0.9
0.85
PC 0.5
——
600
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION
PC (mW)
@T A=125℃
(pF)
to
=-5V
V-55
CE
- 65 to +175
-1
℃/
COMMON EMITTER
COLLECTOR CURRENT
VCB/VEB
Cob/Cibat ——
Maximum Average Reverse Current
@T A=25℃
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
100
Am
10
-1200
Am
40
120
BASE-EMMITER VOLTAGE VBE (mV)
CHARACTERISTICS
Rated DC Blocking Voltage
-1000
(mA)
1.0
30
TSTG
-300
IC
14
40
-55 to +125
COMMON
TJEMITTER
VCE=-6V
Storage Temperature
Range
-1
-0
RΘJA
Typical Thermal Resistance (Note 2)
300
TRANSITION FREQUENCY
(mA)
IC
-100
Operating Temperature Range
-100
FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
fT —— FM180-MH
IC
VBE
12
20
Maximum Average Forward Rectified Current
-10
COLLECTOR CURRENT
(MHz)
——
β=10
-500
VRRM
COLLECTOR CURRENT
IC
-750
fT
IC
Maximum Recurrent Peak Reverse Voltage
CAPACITANCE
(mA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
-1000
IC
0.031(0.8) Typ.
Ratings at 25℃ ambient temperature unless otherwise specified.
β=10
-10
Single phase
half wave, 60Hz,-10resistive of inductive
load.
-1
-100
-1000
IC (mA)
For capacitive load, derate COLLECTOR
current byCURRENT
20%
-1000
Marking Code
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Method 2026
• Polarity : Indicated by cathode band
T =100 ℃
• Mounting Position : Any
• Weight : Approximated 0.011 gram T =25℃
-100
VBEsat ——
-1000
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
-10
COLLECTOR CURRENT
-400
-100
0.012(0.3) Typ.
100
Ta
0.92
Vo
mA
10
500
400
300
200
100
2012-06
1
-0.1
0
-1
REVERSE VOLTAGE
2012-0
-10
V
(V)
-20
0
25
50
WILLAS ELECTRONIC CORP.
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1132THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Outline Drawing
SOT-89
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.181(4.60)
• Epoxy : UL94-V0 rated flame retardant
.173(4.39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.063(1.60)
Method 2026
.055(1.40)
.061REF
• Polarity : Indicated by cathode band
(1.55)REF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
.167(4.25)
12
20
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
14
V.023(0.58)
RMS
.154(3.91)
20
V.016(0.40)
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
.047(1.2)
superimposed
on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
.102(2.60)
14
15
.091(2.30)
40
50
16
60
18
80
10
100
115
150
120
200
V
21
28
35
42
56
70
105
140
V
30
40
50
60
80
100
150
200
V
IO
IFSM
RΘJA
Typical Thermal
Resistance (Note 2)
.031(0.8)
13
30
1.0
30
A
A
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
.197(0.52)
.013(0.32)
FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
.017(0.44)
VF
.118TYP
(3.0)TYPIR
@T A=125℃
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
0.5
Rated DC Blocking Voltage
10
0.85
.014(0.35)
0.9
0.92
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC CORP
Rev.C
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2SB1132
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Package outline
SOD-123H
optimize board space.
Ordering
Information:
high efficiency.
• Low power loss,
0.146(3.7)
0.130(3.3)
low forward voltage drop.
• High current capability,
Device PN Packing • High surge capability.
(3)
(1) (2)
2SB1132 x
–SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage protection.
• Guardring
switching.
• Ultra high-speed
Note: (1)
CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
RoHS
(3)product
CLASSIFICATION OF h
FE RANK for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volt
VRRM
contained are intended to provide a product description only. "Typical" parameters Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volt
Maximum DC
Blocking Voltage
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
VDC
Amp
Maximum Average
Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward
Surge Current 8.3 ms single half sine-wave
WILLAS does not assume any liability arising out of the application or 30
IFSM
Amp
superimposed on rated load (JEDEC method)
use of any product or circuit. RΘJA
℃/W
40
Typical Thermal Resistance (Note 2)
PF
120
Typical Junction
CJ
Capacitance (Note 1)
-55
to
+125
-55
to
+150
Operating Temperature Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
applications where a failure or malfunction of component or circuitry may directly Volt
0.9
Maximum Forward
Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average
Reverse Current at @T A=25℃
or indirectly cause injury or threaten a life without expressed written approval IR
mAm
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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