WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TRANSISTOR (PNP)design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to z Lowoptimize VCE(sat)board space. Low power loss, high efficiency. • z Pb-Free package is available capability, low forward voltage drop. • High current surge capability. • Highproduct RoHS for packing code suffix ”G” • Guardring for overvoltage protection. Halogen free product for packing code suffix “H” switching. • Ultra high-speed Silicon epitaxial planar chip, silicon junction. • z Moisture Sensitivity Level metal 1 • Lead-free parts meet environmental standards of SOT-89 SOD-123H 0.146(3.7) 0.130(3.3) 1. BASE 2. COLLECTOR 0.012(0.3) Typ. 1 0.071(1.8) 0.056(1.4) 2 3. EMITTER MIL-STD-19500 /228 MAXIMUM (Ta=25 ℃ unless product for packing code suffix "G" otherwise noted) • RoHSRATINGS 3 Halogen free product for packing code suffix "H" Symbol Parameter Mechanical data Value Unit : UL94-V0 rated flame retardant VCBO • Epoxy Collector-Base Voltage -40 V : Molded plastic, Voltage SOD-123H VCEO • CaseCollector-Emitter -32 V VEBO 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. , 0.031(0.8) Typ. • Terminals :Plated terminals, solderable per MIL-STD-750 Emitter-Base Voltage -5 V IC Method 2026 Continuous Collector Current • Polarity : Indicated by cathode band Pulsed Collector Current ICP* • Mounting Position : Any Collector Power Dissipation PC • Weight : Approximated 0.011 gram TJ Tstg Junction Temperature -1 A -2 A 500 mW 150 ℃ Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Storage Temperature -55~150 ℃ Ratings at 25℃ ambient temperature unless otherwise specified. 6LQJOHSXOVH,3 PV Single phase half : wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code Parameter Symbol 15 50 16 60 Min18 Typ10 Collector-base breakdown voltage Maximum RMS Voltage 12Test conditions 13 14 20 30 40 150 200 Volt VV(BR)CBO RMS I14 C=-50μA,I 21E=0 28 35 42 -40 56 70 105 V 140 Volt 20 40 50 60 100 150 200 Volt VRRM Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage VDC Collector-emitter breakdown voltage V(BR)CEO IO Emitter-base breakdown Peak Forward Surge Current 8.3 msvoltage single half sine-wave V(BR)EBO IFSM Maximum Average Forward Rectified Current 30 IC=-1mA,IB=0 Collector cut-off current I RCBO ΘJA CJ Typical Junction Capacitance (Note 1) Emitter cut-off current IEBO TJ Operating Temperature Range Storage Temperature Range TSTG DC current gain hFE CHARACTERISTICS VCE(sat) VF Maximum Average Reverse Current at @T A=25℃ Transition frequency Collector NOTES: 80 Max115 Unit120 IE=-50μA,IC=0 VCB=-20V,I E=0 VEB=-4V,I C=0 -55 to +125 -0.5 μA -55 to +150-0.5 μA - 65 to +175 VCE=-3V,IC=-100mA Amp V 40 120 V 82 Amp ℃/W PF ℃ ℃ 390 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Collector-emitter saturation voltage Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage -32 100 1.0 -5 30 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 80 0.50 IfRT VCE=-5V,IC=-50mA,f=30MHz Cob VCB=-10V,IE=0,f=1MHz @T A=125℃ output capacitance IC=-500mA,IB=-50mA -0.2 0.70 -0.5 0.9 0.85 0.5 10 V 0.92 Volt 150 MHz 20 30 mAm pF 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE Rank Range Marking 2012-06 2012-0 P Q R 82-180 120-270 180-390 BAP BAQ BAR WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V IC -1000 Typical Characteristics SOD-123+ PACKAGE Features • Batch process design, excellent Package outline 1000 better reverse leakage current and thermal resistance. -800 optimize board space. -3.5mA -600 power loss, high efficiency. • Low -3mA drop. • High current capability, low forward voltage-2.5mA -2mA • High -400 surge capability. • Guardring for overvoltage protection. -1.5mA • Ultra high-speed switching. -1mA -200 epitaxial planar chip, metal silicon junction. • Silicon I =-0.5mA of • Lead-free parts meet environmental standards Pb Free Product IC SOD-123H Ta=100℃ DC CURRENT GAIN IC -4.5mA in order to • Low profile surface mounted application -4mA COLLECTOR CURRENT —— COMMON EMITTER offers power dissipation Ta=25℃ -5mA hFE (mA) hFE VCE —— 0.146(3.7) 0.130(3.3) Ta=25℃ 0.071(1.8) 0.056(1.4) COMMON EMITTER VCE=-3V B • MIL-STD-19500 /228 -0 -4 packing-8code suffix -12 "G" -16 RoHS-0 product for COLLECTOR-EMITTER VOLTAGE VCE (V) Halogen free product for packing code suffix "H" Mechanical data V —— CEsat 10 -20 -1 IC a a 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Ta=25℃ Dimensions in inches and (millimeters) Ta=100 ℃ -1 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 T =1 00 ℃ a T =2 5℃ a Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) -10 IO IFSM CJ Typical Junction Capacitance (Note 1) 100 -600 -900 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo VF P +150 ℃ Ta=25℃ ℃ -10 0.50 IR -100 Ta=25 ℃ Cib 0.70 IC (mA) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. C C ob 2- Thermal Resistance From Junction to Ambient 10 0.9 0.85 PC 0.5 —— 600 f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) @T A=125℃ (pF) to =-5V V-55 CE - 65 to +175 -1 ℃/ COMMON EMITTER COLLECTOR CURRENT VCB/VEB Cob/Cibat —— Maximum Average Reverse Current @T A=25℃ NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 100 Am 10 -1200 Am 40 120 BASE-EMMITER VOLTAGE VBE (mV) CHARACTERISTICS Rated DC Blocking Voltage -1000 (mA) 1.0 30 TSTG -300 IC 14 40 -55 to +125 COMMON TJEMITTER VCE=-6V Storage Temperature Range -1 -0 RΘJA Typical Thermal Resistance (Note 2) 300 TRANSITION FREQUENCY (mA) IC -100 Operating Temperature Range -100 FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH fT —— FM180-MH IC VBE 12 20 Maximum Average Forward Rectified Current -10 COLLECTOR CURRENT (MHz) —— β=10 -500 VRRM COLLECTOR CURRENT IC -750 fT IC Maximum Recurrent Peak Reverse Voltage CAPACITANCE (mA) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS -1000 IC 0.031(0.8) Typ. Ratings at 25℃ ambient temperature unless otherwise specified. β=10 -10 Single phase half wave, 60Hz,-10resistive of inductive load. -1 -100 -1000 IC (mA) For capacitive load, derate COLLECTOR current byCURRENT 20% -1000 Marking Code BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Method 2026 • Polarity : Indicated by cathode band T =100 ℃ • Mounting Position : Any • Weight : Approximated 0.011 gram T =25℃ -100 VBEsat —— -1000 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 -10 COLLECTOR CURRENT -400 -100 0.012(0.3) Typ. 100 Ta 0.92 Vo mA 10 500 400 300 200 100 2012-06 1 -0.1 0 -1 REVERSE VOLTAGE 2012-0 -10 V (V) -20 0 25 50 WILLAS ELECTRONIC CORP. 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Outline Drawing SOT-89 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .181(4.60) • Epoxy : UL94-V0 rated flame retardant .173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .063(1.60) Method 2026 .055(1.40) .061REF • Polarity : Indicated by cathode band (1.55)REF • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code .167(4.25) 12 20 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage 14 V.023(0.58) RMS .154(3.91) 20 V.016(0.40) DC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave .047(1.2) superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC .102(2.60) 14 15 .091(2.30) 40 50 16 60 18 80 10 100 115 150 120 200 V 21 28 35 42 56 70 105 140 V 30 40 50 60 80 100 150 200 V IO IFSM RΘJA Typical Thermal Resistance (Note 2) .031(0.8) 13 30 1.0 30 A A 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG .197(0.52) .013(0.32) FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .017(0.44) VF .118TYP (3.0)TYPIR @T A=125℃ 0.50 0.70 Maximum Average Reverse Current at @T A=25℃ 0.5 Rated DC Blocking Voltage 10 0.85 .014(0.35) 0.9 0.92 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CORP Rev.C WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SB1132 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to Package outline SOD-123H optimize board space. Ordering Information: high efficiency. • Low power loss, 0.146(3.7) 0.130(3.3) low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) (1) (2) 2SB1132 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage protection. • Guardring switching. • Ultra high-speed Note: (1) CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free MIL-STD-19500 /228 RoHS (3)product CLASSIFICATION OF h FE RANK for packing code suffix "G" • Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS Marking Code 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt VRRM contained are intended to provide a product description only. "Typical" parameters Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volt Maximum DC Blocking Voltage which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 VDC Amp Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave WILLAS does not assume any liability arising out of the application or 30 IFSM Amp superimposed on rated load (JEDEC method) use of any product or circuit. RΘJA ℃/W 40 Typical Thermal Resistance (Note 2) PF 120 Typical Junction CJ Capacitance (Note 1) -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI applications where a failure or malfunction of component or circuitry may directly Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ or indirectly cause injury or threaten a life without expressed written approval IR mAm 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures . 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.