WILLAS FM120-M+ 2SB1260 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to FEATURES z z z z z Pb Free Product SOD-123H SOT-89 optimize board space. Power Transistor loss, high efficiency. • Low power current and capability, low forward voltage drop. • High High Voltage Current • High surge capability. Low Collector-emitter saturation voltage for overvoltage protection. • Guardring Pb-Free packageswitching. is available • Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. • RoHS product for packing code suffix ”G” • Lead-free parts meet environmental standards of Halogen free product MIL-STD-19500 /228 for packing code suffix “H” RoHS product for packing code suffix "G" • Moisture Sensitivity Level 1 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. COLLECTOR 3. EMITTER Halogen free product for packing code suffix "H" Mechanical data VCBO Collector-Base Method 2026Voltage : Approximated 0.011 gram Current IC• Weight Collector Collector Power Dissipation Thermal Resistance From Junction To Ambient V V Dimensions in inches and (millimeters) -5 V -1 A 500 mW 250 ℃/W 150 ℃ -55~+150 ℃ im RatingsθJA at 25℃ ambient temperature unless otherwise specified. Temperature SingleTphase halfJunction wave, 60Hz, resistive of inductive load. j For capacitive load, derate current by 20% Storage Temperature Tstg RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 12 13 14 15 16 60 18 80 10 100 115 150 120 200 V 21 28 35 42 56 70 105 140 V 200 V 20 30 40 specified) 50 VRRM unless otherwise (Ta=25℃ Pr el Maximum Recurrent CHARACTERISTICS Peak Reverse Voltage ELECTRICAL Maximum RMS Voltage VRMS Parameter Maximum DC Blocking Voltage Symbol VDC Collector-base breakdown Maximum Average Forward Rectifiedvoltage Current V(BR)CBO IO V (BR)CEO Collector-emitter breakdown voltage Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 14 20 Test30conditions 40 IC=-50µA,IE=0 Typical Thermal Resistance (Note 2) Collector cut-off current RIΘJA CBO =0 VCB=-60V,I E IEBO VEB=-4V,I C=0 -55 to +125 Emitter cut-off current TJ DC current gainRange Storage Temperature Collector-emitter saturation voltage CHARACTERISTICS Collector output capacitance VCE=-3V, IC=-0.1A VCE(sat) IC=-500mA,IB=-50mA Maximum Average Reverse Current at @T A=25℃ Transition frequency Rated DC Blocking Voltage Unit150 A V V 30 A V -1 µA -1 µA -55 to +150 82- 65 to +175 ℃ 390 -0.4 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U @T A=125℃ 25 Cob VCB=-10V,IE=0, f=1MHz IRfT VCE=-5V,IC=-50mA, 0.5 f=30MHz 10 VF Maximum Forward Voltage at 1.0A DC Max100 40 120 hFE TSTG Typ80 -80 1.0 -5 IE=-50µA,IC=0 Operating Temperature Range Min60 -80 V(BR)EBO CJ 50 IC=-1mA,IB=0 Emitter-base breakdown superimposed on rated load (JEDECvoltage method) Typical Junction Capacitance (Note 1) 0.031(0.8) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R Unit 0.031(0.8) Typ. -80 Emitter-Base Voltage VEBO Position : Any • Mounting Value -80 Voltage VCEO • PolarityCollector-Emitter : Indicated by cathode band PC 0.040(1.0) 0.024(0.6) ina ry unless otherwise noted) MAXIMUM (Ta=25℃ : UL94-V0 rated flame retardant • EpoxyRATINGS • Case : Molded plastic, SOD-123H Symbol Parameter , • Terminals :Plated terminals, solderable per MIL-STD-750 0.50 0.70 0.85 pF 0.9 0.92 V 100 MHz m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE RANK P Q R RANGE 82–180 120–270 180–390 MARKING 2012-06 2012-0 ZL WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1260 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Outline Drawing SOT-89 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) .181(4.60) • Epoxy : UL94-V0 rated flame retardant .173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. ry 0.031(0.8) Typ. Method 2026 .063(1.60) .055(1.40) Dimensions in inches and (millimeters) ina • Polarity : Indicated by cathode band .061REF • Mounting Position : Any (1.55)REF • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 .154(3.91) Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM .167(4.25) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .047(1.2) Typical Thermal Resistance (Note 2) .031(0.8) .023(0.58) 20 .016(0.40) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 16 60 18 80 10 100 115 150 120 200 V 28 35 42 56 70 105 140 V 40 50 60 80 100 150 200 V 1.0 30 A A 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG .060TYP CHARACTERISTICS (1.50)TYP .197(0.52) .013(0.32) 0.50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC VF Maximum Average Reverse Current at .118TYP @T A=25℃ IR @T A=125℃ (3.0)TYP Rated DC Blocking Voltage 30 .102(2.60) 14 15 40 50 .091(2.30) 0.70 0.5 .017(0.44) 0.85 .014(0.35) 0.9 0.92 V m 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 WILLAS ELECTRONIC CORP Rev.C 2012-0 WILLAS ELECTRONIC CORP. WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ 2SB1260 THRU FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. loss, high efficiency. • Low power Information: Ordering 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. Device PN Packing • High surge capability. (3) (1) (2) for overvoltage protection. • Guardring 2SB1260 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Ultra high-speed switching. Note: (1) CASE:SOT‐89 epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental standards of • Lead-free (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 for packing codeFE suffix "G" • RoHS (3) product CLASSIFICATION OF h RANK Halogen free product for packing code suffix "H" Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS changes. WILLAS or anyone on its behalf assumes no responsibility or liability 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximumcontained are intended to provide a product description only. "Typical" parameters RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can A Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA use of any product or circuit. 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storage Temperature Range TSTG WILLAS products are not designed, intended or authorized for use in medical, Pr el Marking Code im Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumapplications where a failure or malfunction of component or circuitry may directly Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR m or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.