2SB1260(SOT 89)

WILLAS
FM120-M+
2SB1260 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
TRANSISTOR
(PNP)
better reverse
leakage current and thermal resistance.
• Low profile surface mounted application in order to
FEATURES
z
z
z
z
z
Pb Free Product
SOD-123H
SOT-89
optimize board space.
Power
Transistor
loss, high efficiency.
• Low power
current and
capability,
low forward voltage drop.
• High
High
Voltage
Current
• High surge capability.
Low
Collector-emitter
saturation voltage
for overvoltage protection.
• Guardring
Pb-Free
packageswitching.
is available
• Ultra high-speed
Silicon epitaxial planar chip, metal silicon junction.
•
RoHS product for packing code suffix ”G”
• Lead-free parts meet environmental standards of
Halogen
free product
MIL-STD-19500
/228 for packing code suffix “H”
RoHS product for packing code suffix "G"
•
Moisture Sensitivity Level 1
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
2. COLLECTOR
3. EMITTER
Halogen free product for packing code suffix "H"
Mechanical data
VCBO
Collector-Base
Method 2026Voltage
: Approximated
0.011 gram
Current
IC• Weight Collector
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
V
V
Dimensions
in inches and (millimeters)
-5
V
-1
A
500
mW
250
℃/W
150
℃
-55~+150
℃
im
RatingsθJA
at 25℃ ambient temperature unless otherwise specified.
Temperature
SingleTphase
halfJunction
wave, 60Hz,
resistive of inductive load.
j
For capacitive
load,
derate
current
by 20%
Storage Temperature
Tstg
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
12
13
14
15
16
60
18
80
10
100
115
150
120
200
V
21
28
35
42
56
70
105
140
V
200
V
20
30
40 specified)
50
VRRM unless
otherwise
(Ta=25℃
Pr
el
Maximum
Recurrent CHARACTERISTICS
Peak Reverse Voltage
ELECTRICAL
Maximum RMS Voltage
VRMS
Parameter
Maximum DC Blocking
Voltage
Symbol
VDC
Collector-base
breakdown
Maximum
Average Forward
Rectifiedvoltage
Current
V(BR)CBO
IO
V (BR)CEO
Collector-emitter breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
14
20 Test30conditions
40
IC=-50µA,IE=0
Typical
Thermal
Resistance
(Note 2)
Collector
cut-off
current
RIΘJA
CBO
=0
VCB=-60V,I
E
IEBO
VEB=-4V,I
C=0
-55 to +125
Emitter cut-off current
TJ
DC current
gainRange
Storage
Temperature
Collector-emitter saturation voltage
CHARACTERISTICS
Collector output capacitance
VCE=-3V, IC=-0.1A
VCE(sat)
IC=-500mA,IB=-50mA
Maximum Average Reverse Current at @T A=25℃
Transition frequency
Rated DC Blocking Voltage
Unit150
A
V
V
30
A
V
-1
µA
-1
µA
-55 to +150
82- 65 to +175
℃
390
-0.4
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
@T A=125℃
25
Cob
VCB=-10V,IE=0, f=1MHz
IRfT
VCE=-5V,IC=-50mA,
0.5
f=30MHz
10
VF
Maximum Forward Voltage at 1.0A DC
Max100
40
120
hFE
TSTG
Typ80
-80 1.0
-5
IE=-50µA,IC=0
Operating Temperature Range
Min60
-80
V(BR)EBO
CJ
50
IC=-1mA,IB=0
Emitter-base
breakdown
superimposed
on rated
load (JEDECvoltage
method)
Typical Junction Capacitance (Note 1)
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R
Unit
0.031(0.8) Typ.
-80
Emitter-Base
Voltage
VEBO
Position : Any
• Mounting
Value
-80
Voltage
VCEO
• PolarityCollector-Emitter
: Indicated by cathode
band
PC
0.040(1.0)
0.024(0.6)
ina
ry
unless otherwise noted)
MAXIMUM
(Ta=25℃
: UL94-V0 rated
flame retardant
• EpoxyRATINGS
• Case : Molded plastic, SOD-123H
Symbol
Parameter
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.50
0.70
0.85
pF
0.9
0.92
V
100
MHz
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82–180
120–270
180–390
MARKING
2012-06
2012-0
ZL
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1260 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Outline Drawing
SOT-89
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
.181(4.60)
• Epoxy : UL94-V0 rated flame retardant
.173(4.39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
ry
0.031(0.8) Typ.
Method 2026
.063(1.60)
.055(1.40)
Dimensions in inches
and (millimeters)
ina
• Polarity : Indicated by cathode band
.061REF
• Mounting Position : Any
(1.55)REF
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pr
eli
m
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
.154(3.91)
Maximum
RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
.167(4.25)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC method)
.047(1.2)
Typical Thermal Resistance (Note 2)
.031(0.8)
.023(0.58)
20
.016(0.40)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
16
60
18
80
10
100
115
150
120
200
V
28
35
42
56
70
105
140
V
40
50
60
80
100
150
200
V
1.0
30
A
A
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
.060TYP
CHARACTERISTICS
(1.50)TYP
.197(0.52)
.013(0.32)
0.50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at
.118TYP
@T A=25℃
IR
@T A=125℃
(3.0)TYP
Rated DC Blocking Voltage
30
.102(2.60)
14
15
40
50
.091(2.30)
0.70
0.5
.017(0.44)
0.85
.014(0.35)
0.9
0.92
V
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP
Rev.C
2012-0
WILLAS ELECTRONIC CORP.
WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
FM120-M+
2SB1260 THRU
FM1200-M+
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
loss, high efficiency. • Low power Information:
Ordering
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
Device PN Packing • High surge capability.
(3)
(1) (2)
for
overvoltage
protection.
• Guardring
2SB1260 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Ultra high-speed switching.
Note: (1)
CASE:SOT‐89 epitaxial planar chip, metal silicon junction.
• Silicon
parts meet environmental standards of
• Lead-free
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
for packing codeFE suffix
"G"
• RoHS
(3) product
CLASSIFICATION OF h
RANK Halogen free product for packing code suffix "H"
Mechanical data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
***Disclaimer***
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
changes. WILLAS or anyone on its behalf assumes no responsibility or liability 12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximumcontained are intended to provide a product description only. "Typical" parameters RMS Voltage
VRMS
V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can A
Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
WILLAS does not assume any liability arising out of the application or superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
use of any product or circuit. 120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
65
to
+175
Storage Temperature
Range
TSTG
WILLAS products are not designed, intended or authorized for use in medical, Pr
el
Marking Code
im
Ratings at 25℃ ambient temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive
load, derate current by 20%
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumapplications where a failure or malfunction of component or circuitry may directly Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
or indirectly cause injury or threaten a life without expressed written approval 10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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