2SB766A(SOT 89)

WILLAS
FM120-M+
2SB766A THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
TRANSISTOR(PNP)
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
FEATURES
• High current capability, low forward voltage drop.
z
Large• High
collector
power dissipation PC
surge capability.
0.146(3.7)
0.130(3.3)
for overvoltage
protection.
• Guardring
Pb-Free
package
is available
• Ultra high-speed switching.
RoHS product for packing code suffix ”G”
z
0.071(1.8)
0.056(1.4)
SOT-89
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
free product
forenvironmental
packing code
suffixof“H”
parts meet
standards
• Lead-free
MIL-STD-19500
Moisture
Sensitivity/228
Level 1
• RoHS product for packing code suffix "G"
z
0.012(0.3) Typ.
1. BASE
Halogen free product for packing code suffix "H"
Mechanical data
2. COLLECTOR
Method
2026
Collector-Base
Voltage
VCBO
• Polarity
: IndicatedVoltage
by cathode band
Collector-Emitter
• Mounting Position : Any
Emitter-Base Voltage
• Weight : Approximated 0.011 gram
VCEO
VEBO
-60
V
-50
V
-5
V
-1
A
Collector Current -Continuous
IC
0.040(1.0)
0.024(0.6)
2
3. EMITTER
3
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
TJ
Tstg
im
MAXIMUM
RATINGS AND ELECTRICAL
Collector
Power Dissipation
500
mW CHARACTERISTICS
PC
1
ina
ry
• Epoxy : UL94-V0 rated flame retardant
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
• Case : Molded plastic, SOD-123H
Symbol • Terminals :Plated
Parameter
Value
Unit ,
terminals, solderable
per MIL-STD-750
Ratings atJunction
25℃ ambient
temperature unless otherwise
Temperature
150 specified.℃
Single phase half wave, 60Hz, resistive of inductive load.
Storage Temperature
-55~150
℃
For capacitive load, derate current by 20%
RATINGS
Pr
el
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
14
21
28
35
20
30
40
50
16
60
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless 20
otherwise
specified)
30
40
50
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
Maximum RMS Voltage
Symbol
Parameter
Maximum DC Blocking Voltage
VDC
Test conditions
Ic=-10μA,IE 0
V=
(BR)CBO
Collector-base breakdown voltage
IO
Maximum Average Forward Rectified Current
=
Ic=-2mA,IB 0
V(BR)CEO Collector-emitter
breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
=
V(BR)EBO IE=-10μA,IC 0
Collector
Typicalcut-off
Thermal current
Resistance (Note 2)
=
ICBO RΘJAVCB=-20V,IE 0 Operating Temperature Range
Storage Temperature
Range
DC current
gain
CHARACTERISTICS
-5
100
1.0
120
200
105
140
150
200
Unit
V
V
30
V
40
120
-0.1
μA
-0.1
μA
hFE(1)TSTG
=
VCE=-10V,IC -500mA
85
- 65 to +175
=
VCE=-5V,IC -1A
hFE(2)
50
IC=-500mA,IB -50mA
VCE(sat) =
VF
Maximum Forward Voltage at 1.0A DC
0.50
I =-500mA,IB -50mA
VBE(sat) =
Base-emitter
saturation
voltage
Maximum Average
Reverse
Current at @T A=25℃
IR C
70
Max
80
115
150
-55 to +150
340
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Collector-emitter saturation voltage
Rated DC
Blocking Voltage
Transition
frequency
56
Typ
60
-60
10
100
-50 =
IEBO CJ VEB=-4V,IC 0
-55
to
+125
TJ
Typical
Junction
Capacitance (Note 1)
Emitter
cut-off
current
42
Min
IFSM
Emitter-base
breakdown
voltagemethod)
superimposed
on rated load (JEDEC
18
80
@T A=125℃f
T
Cob
NOTES:output capacitance
Collector
VCE=-10V,I
=C -50mA,f
= 200MHz
=
V=
CB=-10V,IE 0,f 1MHz
-0.2
0.70
0.5 -0.85
10
0.85
-0.4
V
-1.2
V
200
20
0.9
0.92
MHz
30
pF
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION
OF hFE(1)
Rank
Range
MAKING
2012-06
2012-0
Q
R
S
85-170
120-240
170-340
BQ
BR
BS
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB766A THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing
code suffix "H"
.181(4.60)
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable
per MIL-STD-750
.061REF
0.040(1.0)
0.024(0.6)
ina
ry
.063(1.60)
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
im
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
.102(2.60)
.091(2.30)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
Marking Code
.154(3.91)
RATINGS
Maximum Recurrent Peak Reverse Voltage
12
20
V.023(0.58)
RRM
13
30
Maximum RMS Voltage
14
V.016(0.40)
RMS
21
28
Maximum DC Blocking Voltage
VDC
30
40
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed
on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
.197(0.52)
.013(0.32)
-55 to +150
- 65 to +175
.017(0.44)
FM1100-MH FM1150-MH FM1200-MH
.014(0.35)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
.118TYP
0.9
0.92
V
F
0.50
0.70
0.85
(3.0)TYP
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
20
14
40
@T A=125℃
0.5
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB766A THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Features
Pb Free Product
PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
low
voltage drop.
• High current capability,
(3)
(1)forward
(2)
2SB766A x
–SOT89 G
‐WS Tape& Reel: 1 Kpcs/Reel • High surge capability.
Note: (1)
CASE:SOT‐89 for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental
•
(3) CLASSIFICATION OF h
FE RANK standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: • Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.071(1.8)
0.056(1.4)
Mechanical data
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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