WILLAS FM120-M+ 2SB766A THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H TRANSISTOR(PNP) • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. FEATURES • High current capability, low forward voltage drop. z Large• High collector power dissipation PC surge capability. 0.146(3.7) 0.130(3.3) for overvoltage protection. • Guardring Pb-Free package is available • Ultra high-speed switching. RoHS product for packing code suffix ”G” z 0.071(1.8) 0.056(1.4) SOT-89 • Silicon epitaxial planar chip, metal silicon junction. Halogen free product forenvironmental packing code suffixof“H” parts meet standards • Lead-free MIL-STD-19500 Moisture Sensitivity/228 Level 1 • RoHS product for packing code suffix "G" z 0.012(0.3) Typ. 1. BASE Halogen free product for packing code suffix "H" Mechanical data 2. COLLECTOR Method 2026 Collector-Base Voltage VCBO • Polarity : IndicatedVoltage by cathode band Collector-Emitter • Mounting Position : Any Emitter-Base Voltage • Weight : Approximated 0.011 gram VCEO VEBO -60 V -50 V -5 V -1 A Collector Current -Continuous IC 0.040(1.0) 0.024(0.6) 2 3. EMITTER 3 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) TJ Tstg im MAXIMUM RATINGS AND ELECTRICAL Collector Power Dissipation 500 mW CHARACTERISTICS PC 1 ina ry • Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) • Case : Molded plastic, SOD-123H Symbol • Terminals :Plated Parameter Value Unit , terminals, solderable per MIL-STD-750 Ratings atJunction 25℃ ambient temperature unless otherwise Temperature 150 specified.℃ Single phase half wave, 60Hz, resistive of inductive load. Storage Temperature -55~150 ℃ For capacitive load, derate current by 20% RATINGS Pr el Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 13 14 15 14 21 28 35 20 30 40 50 16 60 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless 20 otherwise specified) 30 40 50 Maximum Recurrent Peak Reverse Voltage VRRM VRMS Maximum RMS Voltage Symbol Parameter Maximum DC Blocking Voltage VDC Test conditions Ic=-10μA,IE 0 V= (BR)CBO Collector-base breakdown voltage IO Maximum Average Forward Rectified Current = Ic=-2mA,IB 0 V(BR)CEO Collector-emitter breakdown voltage Peak Forward Surge Current 8.3 ms single half sine-wave = V(BR)EBO IE=-10μA,IC 0 Collector Typicalcut-off Thermal current Resistance (Note 2) = ICBO RΘJAVCB=-20V,IE 0 Operating Temperature Range Storage Temperature Range DC current gain CHARACTERISTICS -5 100 1.0 120 200 105 140 150 200 Unit V V 30 V 40 120 -0.1 μA -0.1 μA hFE(1)TSTG = VCE=-10V,IC -500mA 85 - 65 to +175 = VCE=-5V,IC -1A hFE(2) 50 IC=-500mA,IB -50mA VCE(sat) = VF Maximum Forward Voltage at 1.0A DC 0.50 I =-500mA,IB -50mA VBE(sat) = Base-emitter saturation voltage Maximum Average Reverse Current at @T A=25℃ IR C 70 Max 80 115 150 -55 to +150 340 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Collector-emitter saturation voltage Rated DC Blocking Voltage Transition frequency 56 Typ 60 -60 10 100 -50 = IEBO CJ VEB=-4V,IC 0 -55 to +125 TJ Typical Junction Capacitance (Note 1) Emitter cut-off current 42 Min IFSM Emitter-base breakdown voltagemethod) superimposed on rated load (JEDEC 18 80 @T A=125℃f T Cob NOTES:output capacitance Collector VCE=-10V,I =C -50mA,f = 200MHz = V= CB=-10V,IE 0,f 1MHz -0.2 0.70 0.5 -0.85 10 0.85 -0.4 V -1.2 V 200 20 0.9 0.92 MHz 30 pF 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE(1) Rank Range MAKING 2012-06 2012-0 Q R S 85-170 120-240 170-340 BQ BR BS WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB766A THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .181(4.60) Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF 0.040(1.0) 0.024(0.6) ina ry .063(1.60) Method 2026 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) .102(2.60) .091(2.30) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el Marking Code .154(3.91) RATINGS Maximum Recurrent Peak Reverse Voltage 12 20 V.023(0.58) RRM 13 30 Maximum RMS Voltage 14 V.016(0.40) RMS 21 28 Maximum DC Blocking Voltage VDC 30 40 Maximum Average Forward Rectified Current IO IFSM .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 .197(0.52) .013(0.32) -55 to +150 - 65 to +175 .017(0.44) FM1100-MH FM1150-MH FM1200-MH .014(0.35) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .118TYP 0.9 0.92 V F 0.50 0.70 0.85 (3.0)TYP Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 14 40 @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB766A THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) low voltage drop. • High current capability, (3) (1)forward (2) 2SB766A x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • High surge capability. Note: (1) CASE:SOT‐89 for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental • (3) CLASSIFICATION OF h FE RANK standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.071(1.8) 0.056(1.4) Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.