2SB1308(SOT 89)

WILLAS
FM120-M+
2SB1308 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Features
TRANSISTOR
(PNP)design, excellent power dissipation offers
• Batch process
better
reverse
leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
z Power
Transistor
optimize
board space.
high Gain
efficiency.
• Low power
z Excellent
DCloss,
current
• High current capability, low forward voltage drop.
z Low
Collector-emitter Saturation Voltage
• High surge capability.
z
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
1. BASE
for overvoltage
protection.
• Guardring
Pb-Free
package
is available
• Ultra high-speed switching.
RoHS
product
for packing code suffix ”G”
epitaxial planar chip, metal silicon junction.
• Silicon
0.012(0.3) Typ.
2. COLLECTOR
0.071(1.8)
0.056(1.4)
3. EMITTER
parts
meet environmental
standards
of
• Lead-free
Halogen
free
product
for packing
code suffix
“H”
z
Pb Free Product
MIL-STD-19500 /228
for packingLevel
code suffix
Moisture
Sensitivity
1 "G"
• RoHS product
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUM
RATINGS
: UL94-V0 (T
rated
flameunless
retardantotherwise noted)
• Epoxy
a=25℃
• Case : Molded plastic, SOD-123H
Symbol
Parameter
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
Value
Collector-Base
Voltage
Method 2026
VCBO
V
Voltage
VCEO
• PolarityCollector-Emitter
: Indicated by cathode
band
-20
Emitter-Base
Voltage
VEBO
Position : Any
• Mounting
-6
V
-3
A
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
150
℃
-55~+150
℃
PC
0.031(0.8) Typ.
Unit
-30
: Approximated
Current0.011 gram
IC• WeightCollector
V
Dimensions
in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R
0.031(0.8) Typ.
θJA
Ratings
at 25℃ ambient temperature unless otherwise specified.
Junction
Temperature
SingleTphase
half
wave, 60Hz,
resistive of inductive load.
j
For capacitive
load,
derate
current
by 20%
Storage Temperature
T
stg
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
otherwise
ELECTRICAL
CHARACTERISTICS (Ta=25℃
14
21
28specified)
35
Maximum RMS Voltage
VRMS unless
Maximum DC Blocking Voltage
VDC
Parameter
Maximum Average Forward Rectified Current
30
40
Test conditions
=
IC=-50µA,IE 0
50
10
100
115
150
120
200
V
42
56
70
105
140
V
150
200
V
60
Min
-30
V(BR)CBO
Collector-emitter breakdown voltage
IFSM
=
IC=-1mA,IB 0
V(BR)CEO
-20
C 0
=
IE=-50µA,I
VR(BR)EBO
ΘJA
-6
superimposed on rated load (JEDEC method)
Emitter-base
breakdown
Typical
Thermal Resistance
(Notevoltage
2)
J
ICCBO
Typical
Junction
Capacitance
(Note 1)
Collector
cut-off
current
TJ
Operating Temperature Range
Emitter cut-off current
TSTG
hFE
DC current gain
CHARACTERISTICS
Collector-emitter
saturation voltage
Maximum Forward Voltage at 1.0A DC
Collector output capacitance
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Transition frequency
E
=
VCB=-20V,I
0
-55 to +125
VCE
=
=-2V, IC -0.5A
Typ
80
1.0
30
40
120
82
100
Max
Unit
A
V
- 65 to +175
V
A
V
℃
-0.5
µA
-0.5
µA
-55 to +150
VEB=-5V,IC 0
IEBO =
Storage Temperature Range
IO
20
18
80
Collector-base breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
Symbol
16
60
390
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH
FM1100-MH FM1150-MH
FM1200-MH U
SYMBOL
IC=-1.5A,I
-0.45
V
VCE(sat) FM120-MH
B=-0.15A
VF
Cob
@T A=125℃
NOTES:
IR
fT
0.50
VCB=-20V,IE=0, f=1MHz
0.70
0.5
VCE=-6V,IC= -50mA,
10
f=30MHz
60
120
0.85
pF
0.9
0.92
V
m
MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82–180
120–270
180–390
MARKING
BFP
BFQ
BFR
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1308 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Typical Characteristics
Static Characteristic
-600
better reverse
-500
-1.2mA
application in order to
• Low profile surface mounted
IC
FE
C
COMMON EMITTER
VCE=-2V
-1.05mA
optimize board space.
-400
COLLECTOR CURRENT
• Low power loss, high efficiency.-0.9mA
High current capability, low forward
voltage drop.
• -300
-0.75mA
• High surge capability.
-0.6mA
Guardring for overvoltage protection.
• -200
-0.45mA
• Ultra high-speed switching.
-0.3mAjunction.
Silicon epitaxial planar chip, metal silicon
• -100
• Lead-free parts meet environmental standards
I =-0.15mAof
SOD-123H
Ta=100℃
hFE
(mA)
• Batch process
——
I
Packagehoutline
1000
COMMON
-1.5mA
design, excellent power dissipation
offers
EMITTER
-1.35mA
℃
Ta=25
leakage current and thermal
resistance.
DC CURRENT GAIN
Features
Pb Free Product
0.146(3.7)
0.130(3.3)
Ta=25℃
0.012(0.3) Typ.
300
0.071(1.8)
0.056(1.4)
B
MIL-STD-19500 /228
-0
RoHS
product
code suffix
"G" -4
-0
-1 for packing
-2
-3
COLLECTOR-EMITTER
VOLTAGE
(V) "H"
CE
Halogen free
product for packing
code Vsuffix
•
Mechanical data
V
CEsat
100
-5
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Method 2026
• Polarity : Indicated by cathode band
T =100 ℃
• Mounting Position : Any
T =25℃
• Weight
: Approximated 0.011 gram
-10
a
a
RATINGS
IC ——
IC
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
-800
Dimensions
T =25℃ in inches and (millimeters)
a
Ta=100 ℃
-600
β=10
-200
-1
-10
-100
-1000
COLLECTOR CURRENT
IC
-3000
(mA)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
fT —— IC
VBE
VRRM
12
20
13200
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
T =2
5℃
a
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
-10
Typical Thermal
Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
Storage Temperature
Range
-1
TSTG
-300
-600
-900
BASE-EMMITER VOLTAGE VBE (mV)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A
C /C DC——
VCB/VEB
ob
ib
500
Maximum Average
Reverse Current at @T A=25℃
VF
600
IR
f=1MHz
IE=0/IC=0
(pF)
100
CAPACITANCE
C
2- Thermal Resistance From Junction to Ambient
2012-0
COMMON EMITTER
-55 to +150
VCE= -6V
- 65 to +175Ta=25℃
-10
-100
0.50
IC
(mA)
0.70
PC —— Ta
0.5
Cob
0.9
0.85
0.92
10
500
Ta=25 ℃
Cib
10
-0.1
40
120
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2012-06
30
COLLECTOR CURRENT
NOTES:
10
-7
-1200
@T A=125℃
Rated DC Blocking Voltage
1.0
30
-55 to +125
TJ
COMMON EMITTER
VCE=-2V
Operating Temperature Range
-0
TRANSITION FREQUENCY
-100
T =1
00℃
a
COLLECTOR CURRENT
100
fT
(mA)
IC
IO
Maximum Average Forward Rectified Current
(MHz)
Maximum Recurrent Peak Reverse Voltage
-1000
(mA)
-1000
Ratings at 25℃ ambient temperature unless otherwise specified.
β=10
Single phase
half wave, 60Hz, resistive of inductive load.
-1
-3000
-1
-10
-100
-1000
For capacitive load, derate
current by
20% IC (mA)
COLLECTOR
CURRENT
Marking Code
-3000
VBEsat ——
-3000
-1000
IC
-400
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
COLLECTOR POWER DISSIPATION
PC (mW)
-100
-1200
Epoxy : UL94-V0 rated flame retardant
• -1000
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
-100
-10
COLLECTOR CURRENT
IC
——
-1
400
300
200
100
0
-1
REVERSE VOLTAGE
-10
V
(V)
-20
0
25
50
75
100
125
150
WILLAS
T (℃) ELECTRONIC CORP
AMBIENT TEMPERATURE
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1308 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-89
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.181(4.60)
retardant
• Epoxy : UL94-V0 rated flame .173(4.39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.063(1.60)
Method 2026
.055(1.40)
.061REF
• Polarity : Indicated by cathode band
(1.55)REF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.167(4.25)
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VRRM
Maximum Recurrent Peak Reverse Voltage
.154(3.91)
12
20
13
30
.102(2.60)
14
15
.091(2.30)
40
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
14
V.023(0.58)
RMS
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
.016(0.40)
20
VDC
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
.047(1.2)
superimposed on rated load (JEDEC method)
.031(0.8)
Typical Thermal
Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
.197(0.52)
.017(0.44)
FM140-MH FM150-MH FM160-MH FM180-MH
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
.013(0.32)
0.9
0.92
0.50
0.70
0.85
.014(0.35)
.118TYP VF
0.5
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
(3.0)TYP IR
10
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC
Rev.C CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1308 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing low forward voltage drop.
• High current capability,
(3)
surge capability.
• High
2SB1308 x
–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
CASE:SOT‐89 switching.
• Ultra high-speed
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
(3) CLASSIFICATION OF h
FE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified.
Single phase
half
wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
VRRM
contained are intended to provide a product description only. "Typical" parameters Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Vo
Maximum which may be included on WILLAS data sheets and/ or specifications can DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Am
Maximum and do vary in different applications and actual performance may vary over time. Average Forward Rectified Current
IO
1.0
Peak Forward
Surge Current 8.3 ms single half sine-wave
WILLAS does not assume any liability arising out of the application or 30
IFSM
Am
superimposed on rated load (JEDEC method)
use of any product or circuit. ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
P
120
Typical Junction
Capacitance (Note 1)
CJ
-55 to +125
TJ
WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range
Storage Temperature Range
TSTG
-55 to +150
- 65 to +175
℃
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
applications where a failure or malfunction of component or circuitry may directly Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum or indirectly cause injury or threaten a life without expressed written approval Average Reverse Current at @T A=25℃
IR
mA
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in 10
NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
. 2- Thermal Inc and its subsidiaries harmless against all claims, damages and expenditures
Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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