WILLAS FM120-M+ 2SC1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR (NPN) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to package is available z Pb-Free optimize board space. RoHS product for packing code suffix ”G” high efficiency. • Low power loss, High current capability, low forward voltage • Halogen free product for packing code suffixdrop. “H” • High surge capability. z Small Flat Package for overvoltage protection. • Guardring high-speed switching. • Ultra z High Speed Switching Time • Silicon epitaxial planar chip, metal silicon junction. z Low Collector-emitter saturation voltage • Lead-free parts meet environmental standards of z Moisture Sensitivity MIL-STD-19500 /228Level 1 RoHS product for packing code suffix "G" • APPLICATIONS SOT-89 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE 2. COLLECTOR 0.071(1.8) 0.056(1.4) 3. EMITTER Halogen free product for packing code suffix "H" z Power Amplifier Mechanical data unless otherwise noted) MAXIMUM RATINGS (Ta=25℃ : UL94-V0 rated flame retardant • Epoxy ina ry Symbol Parameter • Case : Molded plastic, SOD-123H :Plated terminals, Collector-Base Voltagesolderable per MIL-STD-750 VCBO• Terminals VCEO Method 2026 Collector-Emitter Voltage • Polarity : Indicated by cathode band Emitter-Base Voltage VEBO • Mounting Position : Any Collector Current IC • Weight : Approximated 0.011 gram RθJA Collector Power Dissipation Value , Unit 0.031(0.8) Typ. 50 V Dimensions in inches and (millimeters) 5 V 2 A 500 mW MAXIMUM RATINGS ELECTRICAL Thermal Resistance FromAND Junction To Ambient CHARACTERISTICS 250 ℃/W Ratings ambient Temperature temperature unless otherwise specified. Tj at 25℃Junction Single phase half wave, 60Hz, resistive of inductive load. Storage Temperature Tstg For capacitive load, derate current by 20% RATINGS 150 ℃ -55~+150 ℃ Pr el SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 12 otherwise 13 14 15 specified) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage 20 30 40 50 14 21 28 Test conditions 20 30 40 50 35 16 60 115 150 120 200 Min42 Typ 56 Max 70 Unit 105 140 Collector-base breakdown voltage VDC V(BR)CBO IC=100µA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 IE=100µA,IC=0 5 IO Peak Forward Surge Current 8.3 ms single half sine-waveV Emitter-base breakdown voltage IFSM (BR)EBO Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Collector cut-off current ICBO VCB=50V,IE =0 Emitter cut-offCapacitance current (Note 1) Typical Junction IEBO CJ VEB=5V,IC=0 RΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range DC current gain Storage Temperature Range VRRM VRMS Symbol Maximum RMS Voltage Parameter 0.031(0.8) Typ. V 50 im PC 0.040(1.0) 0.024(0.6) 50 18 80 60 80 TJ hFE(1) 70 TSTG * hFE(2) VCE=2V, IC=2A 20 100 1.0 30 40 120 -55ICto +125 VCE=2V, =0.5A 10 100 - 65 to +175 V 150 200 V V 0.1 µA 0.1 µA -55 to +150 240 Collector-emitterCHARACTERISTICS saturation voltage IC=1A,IBFM130-MH =50mA FM140-MH FM150-MH FM160-MH FM180-MH 0.5 VSYMBOL CE(sat) FM120-MH FM1100-MHVFM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC Base-emitter saturation voltage VF VBE(sat) Maximum Average Reverse Current at @T A=25℃ Transition frequency @T A=125℃ Rated DC Blocking Voltage fTIR 0.50 IC=1A,IB=50mA 0.70 0.85 1.2 0.5 120 VCE=2V,IC=0.5A,f=100MHz 10 V 0.9 0.92 MHz CLASSIFICATION OF hFE(1) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. P RANK 2- Thermal Resistance From Junction to Ambient Q Y RANGE 82–180 120–270 180–390 MARKING P1766 Q1766 Y1766 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC1766 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features Outline Drawing SOT-89 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .061REF • Terminals :Plated terminals, solderable per MIL-STD-750 ina ry 0.040(1.0) 0.024(0.6) Method 2026 .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) RATINGS Pr el .154(3.91) Marking Code .102(2.60) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH .091(2.30) 12 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM .023(0.58) 20 .016(0.40) Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TJ TSTG .197(0.52) .013(0.32) A 40 120 -55 to +125 A ℃ -55 to +150 - 65 to +175 .017(0.44) .014(0.35) .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (3.0)TYPVF 0.9 0.92 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ 0.5 IR U V m 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC1766 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Ordering surface mounted application in order to • Low profile Information: SOD-123H optimize board space. Device PN Packing 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) (3) (1) (2) 2SC1766 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel current capability, low forward voltage drop. • High capability. • High surge Note: (1) CASE:SOT‐89 • Guardring for overvoltage protection. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” high-speed switching. • Ultra • Silicon epitaxial planar chip, metal silicon junction. • Lead-free (3) CLASSIFICATION OF h FE RANK parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.071(1.8) 0.056(1.4) Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings specification herein, to make corrections, modifications, enhancements or other at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM which may be included on WILLAS data sheets and/ or specifications can Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Vo Maximumand do vary in different applications and actual performance may vary over time. DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC A MaximumWILLAS does not assume any liability arising out of the application or Average Forward Rectified Current IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave use of any product or circuit. 30 IFSM A superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA P 120 Typical Junction Capacitance (Note 1) C J WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range TJ -55 to +125 -55 to +150 life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximumof WILLAS. Customers using or selling WILLAS components for use in Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.