2SC1766(SOT 89)

WILLAS
FM120-M+
2SC1766 THRU
FM1200-M
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
TRANSISTOR
(NPN)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
package is available
z Pb-Free
optimize board space.
RoHS
product
for packing
code suffix ”G”
high efficiency.
• Low power loss,
High
current
capability,
low
forward
voltage
•
Halogen free product for packing
code
suffixdrop.
“H”
• High surge capability.
z Small
Flat Package
for overvoltage protection.
• Guardring
high-speed
switching.
• Ultra
z High
Speed
Switching
Time
• Silicon epitaxial planar chip, metal silicon junction.
z Low Collector-emitter saturation voltage
• Lead-free parts meet environmental standards of
z Moisture
Sensitivity
MIL-STD-19500
/228Level 1
RoHS
product
for
packing
code suffix "G"
•
APPLICATIONS
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. COLLECTOR
0.071(1.8)
0.056(1.4)
3. EMITTER
Halogen free product for packing code suffix "H"
z Power Amplifier
Mechanical data
unless otherwise noted)
MAXIMUM
RATINGS
(Ta=25℃
: UL94-V0 rated
flame retardant
• Epoxy
ina
ry
Symbol
Parameter
• Case : Molded plastic, SOD-123H
:Plated terminals,
Collector-Base
Voltagesolderable per MIL-STD-750
VCBO• Terminals
VCEO
Method 2026
Collector-Emitter
Voltage
• Polarity : Indicated by cathode band
Emitter-Base Voltage
VEBO
• Mounting Position : Any
Collector Current
IC
• Weight : Approximated 0.011 gram
RθJA
Collector Power Dissipation
Value
,
Unit
0.031(0.8) Typ.
50
V
Dimensions in inches and (millimeters)
5
V
2
A
500
mW
MAXIMUM
RATINGS
ELECTRICAL
Thermal
Resistance
FromAND
Junction
To Ambient CHARACTERISTICS
250
℃/W
Ratings
ambient Temperature
temperature unless otherwise specified.
Tj at 25℃Junction
Single phase half wave, 60Hz, resistive of inductive load.
Storage Temperature
Tstg
For capacitive
load, derate current by 20%
RATINGS
150
℃
-55~+150
℃
Pr
el
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12 otherwise
13
14
15
specified)
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
20
30
40
50
14
21
28
Test conditions
20
30
40
50
35
16
60
115
150
120
200
Min42 Typ 56 Max 70 Unit 105
140
Collector-base breakdown voltage
VDC
V(BR)CBO
IC=100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
IE=100µA,IC=0
5
IO
Peak Forward Surge
Current 8.3 ms
single half sine-waveV
Emitter-base
breakdown
voltage
IFSM
(BR)EBO
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Collector cut-off current
ICBO
VCB=50V,IE =0
Emitter
cut-offCapacitance
current (Note 1)
Typical Junction
IEBO
CJ
VEB=5V,IC=0
RΘJA
Typical Thermal Resistance (Note 2)
Operating Temperature Range
DC
current gain
Storage Temperature Range
VRRM
VRMS
Symbol
Maximum RMS
Voltage
Parameter
0.031(0.8) Typ.
V
50
im
PC
0.040(1.0)
0.024(0.6)
50
18
80
60
80
TJ
hFE(1)
70 TSTG
*
hFE(2)
VCE=2V, IC=2A
20
100
1.0
30
40
120
-55ICto
+125
VCE=2V,
=0.5A
10
100
- 65 to +175
V
150
200
V
V
0.1
µA
0.1
µA
-55 to +150
240
Collector-emitterCHARACTERISTICS
saturation voltage
IC=1A,IBFM130-MH
=50mA FM140-MH FM150-MH FM160-MH FM180-MH
0.5
VSYMBOL
CE(sat)
FM120-MH
FM1100-MHVFM1150-MH FM1200-MH
Maximum Forward
Voltage at 1.0A
DC
Base-emitter
saturation
voltage
VF
VBE(sat)
Maximum Average
Reverse Current at @T A=25℃
Transition
frequency
@T A=125℃
Rated DC Blocking Voltage
fTIR
0.50
IC=1A,IB=50mA
0.70
0.85
1.2
0.5
120
VCE=2V,IC=0.5A,f=100MHz
10
V
0.9
0.92
MHz
CLASSIFICATION
OF hFE(1)
NOTES:
1- Measured
at 1 MHZ and applied reverse voltage
of 4.0 VDC.
P
RANK
2- Thermal Resistance From Junction to Ambient
Q
Y
RANGE
82–180
120–270
180–390
MARKING
P1766
Q1766
Y1766
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC1766 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Outline Drawing
SOT-89
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.181(4.60)
Halogen free product for packing code suffix "H"
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.061REF
• Terminals :Plated terminals, solderable
per MIL-STD-750
ina
ry
0.040(1.0)
0.024(0.6)
Method 2026
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
im
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
Pr
el
.154(3.91)
Marking Code
.102(2.60)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH
.091(2.30)
12
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
.023(0.58)
20
.016(0.40)
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TJ
TSTG
.197(0.52)
.013(0.32)
A
40
120
-55 to +125
A
℃
-55 to +150
- 65 to +175
.017(0.44)
.014(0.35)
.118TYP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
(3.0)TYPVF
0.9
0.92
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
@T A=125℃
0.5
IR
U
V
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC1766 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Ordering
surface mounted application
in order to
• Low profile Information:
SOD-123H
optimize board space.
Device PN Packing 0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
(3)
(1) (2)
2SC1766 x
–SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel current capability,
low forward
voltage drop.
• High
capability.
• High surge
Note: (1)
CASE:SOT‐89 • Guardring for overvoltage protection.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” high-speed switching.
• Ultra
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free
(3) CLASSIFICATION OF h
FE RANK parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.071(1.8)
0.056(1.4)
Mechanical data
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings specification herein, to make corrections, modifications, enhancements or other at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
which may be included on WILLAS data sheets and/ or specifications can Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Vo
Maximumand do vary in different applications and actual performance may vary over time. DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
A
MaximumWILLAS does not assume any liability arising out of the application or Average Forward Rectified Current
IO
1.0
Peak Forward
Surge Current 8.3 ms single half sine-wave
use of any product or circuit. 30
IFSM
A
superimposed on rated load (JEDEC method)
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
P
120
Typical Junction
Capacitance
(Note
1)
C
J
WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range
TJ
-55 to +125
-55 to +150
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximumof WILLAS. Customers using or selling WILLAS components for use in Average Reverse Current at @T A=25℃
IR
m
10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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