2SD874(SOT 89)

WILLAS
FM120-M+
2SD874THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Features
SOT-89
TRANSISTOR
design, excellent power dissipation offers
• Batch process(NPN)
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
board space.
z optimize
Low Collector-Emitter
Saturation Voltage
• Low power loss, high efficiency.
z • High
Large
Collector Power Dissipation
current capability, low forward voltage drop.
surge
capability.
z • High
Mini
Power
Type Package
Guardring
for
overvoltage
•
z Pb-Free package is protection.
available
• Ultra high-speed switching.
RoHS
product
for packing
code
suffix
”G”
epitaxial
planar
chip, metal
silicon
junction.
• Silicon
parts
meet
environmental
standards
• Lead-free
Halogen free product for packing code ofsuffix “H”
MIL-STD-19500
/228
z Moisture Sensitivity
Level 1
• RoHS product for packing code suffix "G"
Halogen free
product for (T
packing
codeunless
suffix "H"otherwise noted)
=25℃
MAXIMUM
RATINGS
Mechanical data
Emitter-Base Voltage
0.071(1.8)
0.056(1.4)
3. EMITTER
Value
Unit
30
V
0.031(0.8) Typ.
25
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
V
V
Dimensions in inches and (millimeters)
1
Thermal Resistance From Junction To Ambient
A
500
mW
250
℃/W
℃
MAXIMUM
AND ELECTRICAL CHARACTERISTICS
JunctionRATINGS
Temperature
150
Ratings at T
25℃ ambient
temperature
unless otherwise specified.
Storage
Temperature
stg
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
℃
im
-55~+150
FM130-MH
FM140-MH FM150-MH
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
FM120-MH
RATINGS
unless
otherwise
specified)
ELECTRICAL
CHARACTERISTICSSYMBOL
(Ta=25℃
Marking Code
12
20
VRRMSymbol
Maximum Recurrent Peak
Reverse Voltage
Parameter
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
Collector cut-off current
IO
V(BR)EBO
IFSM ICBO
Emitter cut-off current
RΘJA IEBO
Maximum RMS Voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
16
60
30
60
V(BR)CBO
IC=10µA,IE=0
V(BR)CEO
IC=2mA,IB=0
Typical Junction Capacitance (Note 1)
CJ
hFE(1)
Operating Temperature Range
TJ
hFE(2)
DC current gain
Storage Temperature Range
Collector-emitter saturation voltage
13
14
15
30
40
50
Test conditions
21
28
35
Pr
el
0.012(0.3) Typ.
2. COLLECTOR
5
• Polarity : Indicated by cathode band
Collector Current
IC
• Mounting Position : Any
Collector Power Dissipation
PC
• Weight : Approximated 0.011 gram
Tj
0.146(3.7)
0.130(3.3)
1. BASE
ina
ry
Method 2026
RθJA
SOD-123H
a
Parameter
Epoxy : UL94-V0 rated flame retardant
•Symbol
Collector-Base
Voltage
V
• Case
CBO: Molded plastic, SOD-123H
,
• Terminals
:Plated
terminals, solderable
Collector-Emitter
Voltage per MIL-STD-750
VCEO
VEBO
Pb Free Product
Base-emitter
saturation voltage
CHARACTERISTICS
TSTG
Maximum Average Reverse Current at @T A=25℃
Collector output capacitance
Rated DC Blocking Voltage
42
50
25
80
100
1.0
5
30
IE=10µA,IC=0
VCB=20V,IE=0
VEB =4V,IC=0
40
120 85
VCE =10V, IC=500mA
-55 to +125
VCE=5V, IC=1A
50
150
V
V
Volts
Volts
Volts
200
Amps
V
0.1
µA
Amps
0.1
µA
℃/W
340
PF
-55 to +150
- 65 to +175
IC=500mA,IB=50mA
VCE(sat)
30
56
10
115
120
100
150
Typ
Max
Unit 200
70
105
140
0.4
℃
℃
V
IC=500mA,I
1.2
VBE(sat)
FM120-MH FM130-MH
FM140-MH
FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MHVFM1200-MH UNIT
B=50mA
SYMBOL
VF
Maximum
Forward Voltage
at 1.0A DC
Transition
frequency
40
18
Min80
@T A=125℃
IR
0.50C=50mA, f=200MHz
0.70
VCE=10V,I
fT
VCB=10V, IE=0, f=1MHz
Cob
0.5
0.9 MHz 0.92
0.85
200
Volts
20
10
pF
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CLASSIFICATION OF hFE(1)
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
RANK
Q
R
S
RANGE
85–170
120–240
170–340
MARKING
ZQ
ZR
ZS
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SD874 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-89
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.181(4.60)
• Epoxy : UL94-V0 rated flame retardant
.173(4.39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
Method 2026
.063(1.60)
.055(1.40)
.061REF
• Polarity : Indicated by cathode band
(1.55)REF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
12
20
VRRM
Maximum
Recurrent Peak Reverse Voltage
.154(3.91)
.102(2.60)
13
30
14
15
.091(2.30)
40
50
16
60
18
80
10
100
115
150
120
200
Volts
Pr
el
.167(4.25)
Marking
Code
Maximum RMS Voltage
14
VRMS
.023(0.58)
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
20
VDC.016(0.40)
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
.047(1.2)
superimposed on rated load (JEDEC method)
RΘJA
.031(0.8)
Typical Thermal
Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
1.0
30
40
120
-55 to +125
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
.197(0.52)
FM140-MH FM150-MH FM160-MH FM180-MH
FM1100-MH FM1150-MH FM1200-MH
.017(0.44)
SYMBOL FM120-MH FM130-MH
.013(0.32)
0.9
0.92
VF
0.50
0.70
0.85
.014(0.35)
.118TYP
UNIT
IR
(3.0)TYP
mAm
0.5
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Amp
10
@T A=125℃
Volts
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC CORP.
Rev.C
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SD874 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Pb Free Product
Package outline
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Ordering
Information: • Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
low forward voltage drop.
• High current capability,
Device PN Packing • High surge capability.
(3)
(1) (2)
2SD874 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
CASE:SOT‐89 switching.
• Ultra high-speed
• Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
(3) CLASSIFICATION OF h
FE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volt
VRRM
contained are intended to provide a product description only. "Typical" parameters Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volt
which may be included on WILLAS data sheets and/ or specifications can Maximum DC
Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Amp
Maximum Average
Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward
Surge Current 8.3 ms single half sine-wave
WILLAS does not assume any liability arising out of the application or 30
IFSM
Amp
superimposed on rated load (JEDEC method)
use of any product or circuit. RΘJA
℃/W
40
Typical Thermal Resistance (Note 2)
PF
120
Typical Junction
CJ
Capacitance (Note 1)
-55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
℃
Pr
el
Ratings at 25℃ WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
applications where a failure or malfunction of component or circuitry may directly Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average
Reverse Current at @T A=25℃
or indirectly cause injury or threaten a life without expressed written approval IR
mAm
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance
From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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