2SD1766(SOT 89)

WILLAS
FM120-M+
2SD1766 THRU
FM1200-M
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
TRANSISTOR
(NPN)
process design, excellent power dissipation offers
• Batch
FEATURESbetter reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
z
Lowoptimize
VCE(sat)board
.VCE(sat)
=0.16V(Typ.)(IC/IB=2A/0.2A)
space.
loss, high efficiency.
• Low power
z
Pb-Free
package
is available
• High current capability, low forward voltage drop.
RoHS
for packing code suffix ”G”
surge capability.
• Highproduct
Guardring for overvoltage protection.
•
Halogen free product for packing code suffix “H”
• Ultra high-speed switching.
z
Moisture
Sensitivity
1 silicon junction.
planar Level
chip, metal
• Silicon epitaxial
• Lead-free parts meet environmental standards of
MAXIMUM RATINGS
(Ta=25
MIL-STD-19500
/228℃ unless otherwise noted)
RoHS product for packing code suffix "G"
•
Symbol
Parameter
Value
Unit
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
2. COLLECTOR
0.071(1.8)
0.056(1.4)
3. EMITTER
Halogen free product for packing code suffix "H"
VCBO
Collector-Base Voltage
Mechanical
data
VCEO
Epoxy : UL94-V0 rated
flame retardant 32
• Collector-Emitter
V
Voltage
Case : MoldedVoltage
plastic, SOD-123H
• Emitter-Base
5
V
,
• Terminals :Plated terminals, solderable per MIL-STD-750
VEBO
IC
40
Collector Current -Continuous
2
Method 2026
PC
500
• Collector
Polarity : dissipation
Indicated by cathode band
150
MountingTemperature
Position : Any
• Junction
• Storage
Weight :Temperature
Approximated 0.011 gram
-55-150
TJ
Tstg
V
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
A
mW
Dimensions in inches and (millimeters)
℃
℃
MAXIMUM RATINGS(TAND
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
a=25℃ unless otherwise specified)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
For capacitive load, derate current by 20%
Test conditions
Min
RATINGS
Collector-base breakdown
voltage
FM140-MH FM150-MH FM160-MH
SYMBOL
FM120-MHIEFM130-MH
IC=50μA,
=0
40
V(BR)CBO
Maximum Recurrent
Peak Reverse
Voltage
Collector-emitter
breakdown
voltage
V(BR)CEO
VRRM
Marking Code
15
50
18
80
42
56
70
105
140
60 5
80
100
V
150
200
ICBO IO VCB=20V, IE=0
1.0
30
superimposed on rated load (JEDEC method)
hFE(1)RΘJA VCE=3V, IC=500mA
CJ
Typical Junction Capacitance (Note 1)
40
82
120
-55 to +125
VCE(sat)TJ IC=2A, IB=0.2A
Operating Temperature
Range voltage
Collector-emitter
saturation
Storage Temperature Range
μA
1
μA
390
V
- 65 to +175
VCE=5V, IC=50mA, f=100MHz
fT
CHARACTERISTICS
1
-55 to +150
0.8
TSTG
Transition
frequency
100
MHz
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum
Forward
Voltage at 1.0A DC
Collector
output
capacitance
0.50
Cob VF VCB=10V, IE=0, f=1MHz
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltagePof 4.0 VDC.
Rank
0.70
0.9
pF
300.85
0.5
IR
0.92
10
Q
R
82-180
120-270
180-390
DBP
DBQ
DBR
2- Thermal Resistance From Junction to Ambient
2012-0
120
200
35
Thermal
DC Typical
current
gain Resistance (Note 2)
2012-06
115
150
V
50
Peak Forward Surge Current 8.3 ms single half sine-wave
IEBO IFSM VEB=4V, IC=0
Emitter
cut-off current
Range
Marking
10
100
28
Rated DC Blocking Voltage
FM180-MH FM1100-MH FM1150-MH
FM1200-MH
V
16
6032
40
Maximum
Average
Forward Rectified Current
Collector
cut-off
current
CLASSIFICATION
OF hFE(1)
Unit
21
VRMS
14
14
40
Max
V(BR)EBO
20 IC=030
VDC IE=50μA,
Maximum RMS Voltage
Emitter-base
voltage
Maximum DCbreakdown
Blocking Voltage
12
13
20 IB=030
IC=1mA,
Typ
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SD1766 THRU
FM1200-M
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Typical Characteristics
Features Static Characteristic
700
process design, excellent power dissipation offers
• Batch
COMMON
Package
outline
h
——
I
FE
1000
EMITTER
better
reverse leakage current and thermal resistance.
T =25℃
profile surface mounted application
in order to
• Low
2.0mA
600
IC
COLLECTOR CURRENT
MIL-STD-19500 /228
COLLECTOR-EMITTER VOLTAGE
Mechanical data
COMMON EMITTER
VCE= 3V
10
5
1
10
100
• Polarity : Indicated by cathode band
• Mounting Position : Any
T =100 ℃
• Weight : Approximated 0.011 gram
400
600
a
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
a
VCEsat
β=10
IC
——
2000
(mA)
0.040(1.0)
0.024(0.6)
IC
0.031(0.8) Typ.
0.031(0.8) Typ.
Ta=100 ℃
100
Dimensions in inches and (millimeters)
Ta=25℃
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
200
IC
RATINGS
VBE ——
Marking Code
12
20
=3V
Maximum RMSVCE
Voltage
VRMS
14
VDC
20
(mA)
COMMON EMITTER
Maximum DC Blocking Voltage
100
T =2
5℃
a
T =1
00℃
a
IC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction
Capacitance (Note 1)
1
Storage Temperature Range
14
40
IC
(mA)
21
30
15 fT ——
16 IC
50
60
COMMON EMITTER
VCE=5V28
35
Ta=25℃
40
42
50
60
18
80
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
100
40
120
-55 to +150
- 65 to +175
TSTG
10
0.6
0.9
Maximum Forward Voltage at 1.0A DC
C /C
——
1.2
VF
V /V
ob
ib
CB EB
Maximum
1000 Average Reverse Current at @T A=25℃
0.70
PC
——
(pF)
C
2- Thermal Resistance From JunctionCto Ambient
ob
10
10
V
(V)
0.92
400
200
0
1
0.9
0.85
T
a
0.5
10
Ta=25 ℃
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
100
REVERSE VOLTAGE
100
40
600
f=1MHz
IE=0/IC=0
Cib
NOTES:
10
0.50
IR
@T A=125℃
Rated DC Blocking Voltage
5
(mA)
FM150-MHCURRENT
FM160-MHICFM180-MH
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MHCOLLECTOR
VBE (V)
COLLECTOR POWER DISSIPATION
PC (mW)
0.3
BASE-EMMITER VOLTAGE
CHARACTERISTICS
1
0.1
1000 2000
100
-55 to +125
TJ
Operating Temperature Range
13
30
1000
TRANSITION FREQUENCY
IO
Maximum Average Forward Rectified Current
2012-06
10
fT
VRRM
2000
0.1
0.0
1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
IC
Maximum
Recurrent Peak Reverse Voltage
1000
10
1
0.1
COLLECTOR CURREMT
(mA)
(MHz)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
Method 2026
T =25℃
COLLECTOR CURREMT
COLLECTOR CURRENT
1000
COLLECTOR CURRENT
VCE (V)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
0
For capacitive
load, derate
current
0.1
1
10 by 20% 100
1000 2000
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
VBEsat
——
rated
flameIC retardant
• Epoxy : UL94-V0
300
β=10 : Molded plastic, SOD-123H
• Case
,
• Terminals :Plated terminals, solderable per MIL-STD-750
800
CAPACITANCE
0.146(3.7)
0.130(3.3)
100
1000
2012-0
Ta=25℃
IB=0.2mA
0
1
3
4
Halogen
free
product2 for packing
code suffix
"H"
SOD-123H
hFE
1.8mA
DC CURRENT GAIN
(mA)
optimize board space.
• Low power loss, high efficiency.
1.6mA
drop.
• High current capability, low forward voltage
400
1.4mA
• High surge capability.
1.2mA
300
• Guardring for overvoltage protection. 1.0mA
• Ultra high-speed switching.
0.8mA
200
• Silicon epitaxial planar chip, metal silicon
0.6mAjunction.
0.4mA
of
• Lead-free parts meet environmental standards
100
•0RoHS product for packing code suffix "G"
Ta=100℃
a
500
C
30
0
25
50
75
WILLAS
ELECTRONIC COR
T (℃ )
AMBIENT TEMPERATURE
100
125
150
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SD1766 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Outline Drawing
SOT-89
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.181(4.60)
Halogen free product for packing code suffix "H"
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.061REF
• Terminals :Plated terminals, solderable
per MIL-STD-750
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
Method 2026
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
.102(2.60)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH
.091(2.30)
RATINGS
.154(3.91)
Marking Code
12
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
.023(0.58)
20
.016(0.40)
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
Maximum DC Blocking Voltage
IO
Maximum Average Forward Rectified Current
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
TJ
TSTG
.197(0.52)
.013(0.32)
40
120
-55 to +125
-55 to +150
- 65 to +175
.017(0.44)
.014(0.35)
.118TYP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
(3.0)TYPVF
0.9
0.92
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
@T A=125℃
0.5
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M+
2SD1766 THRU
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Packing capability, low forward voltage drop.
• High currentDevice PN (3)
High surge capability.
• 2SD1766 x
–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
high-speed switching.
• Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
(3) CLASSIFICATION OF h
FE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃
ambient temperature unless otherwise specified.
Singlespecification herein, to make corrections, modifications, enhancements or other phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Markingfor any errors or inaccuracies. Data sheet specifications and its information Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
contained are intended to provide a product description only. "Typical" parameters 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum
Average
Forward
Rectified
Current
I
O
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward
Surge Current 8.3 ms single half sine-wave
WILLAS does not assume any liability arising out of the application or 30
IFSM
superimposed on rated load (JEDEC method)
use of any product or circuit. 40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
TJ
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Operating Temperature Range
Storage Temperature Range
-55 to +150
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
applications where a failure or malfunction of component or circuitry may directly 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
or indirectly cause injury or threaten a life without expressed written approval Maximum
Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal
Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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