BCX51(SOT 89)

WILLAS
FM120-M+
BCX51 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profile
TRANSISTOR
(PNP)
SOT-89
optimize board space.
• Low power loss, high efficiency.
FEATURES
• High current capability, low forward voltage drop.
High surge capability.
z NPN •Complements
to BCX54,BCX55,BCX56
• Guardring for overvoltage protection.
z Low Voltage
• Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
z High •Current
• Lead-free parts meet environmental standards of
package is/228
available
z Pb-Free
MIL-STD-19500
RoHS product for packing code suffix "G"
•
RoHS product for packing code suffix ”G”
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
2. COLLECTOR
3. EMITTER
Halogen free product for packing code suffix "H"
Halogen
free productdata
for packing code suffix “H”
Mechanical
Moisture
Sensitivity
Level
1 retardant
: UL94-V0 rated
flame
• Epoxy
z
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
APPLICATIONS
,
• Terminals :Plated terminals, solderable per MIL-STD-750
z Medium Power Method
General
Purposes
2026
z Driver
Stages: Indicated
of AudiobyAmplifiers
• Polarity
cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
im
MARKING:BCX51:AA,
BCX51-10:AC, BCX51-16:AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
BCX53-10:AK,
BCX53-16:AL
Ratings atBCX53:AH,
25℃ ambient temperature
unless otherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
20
Pr
el
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
13
30
noted)
MAXIMUM
RATINGS
(Ta=25℃ unless otherwise
14
21
Maximum RMS
Voltage
VRMS
Maximum DC Blocking Voltage
Symbol
VDC
Parameter
Collector-Base Voltage
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
VCEO
RΘJA
CJ
BCX51
TJ
BCX53
CHARACTERISTICS
Emitter-Base
Voltage
Maximum Forward Voltage at 1.0A DC
IC
TSTG
Collector Current
Collector
PC DC Blocking
Rated
VoltagePower
RθJA
NOTES:
VF
Dissipation
@T A=125℃
Temperature
Tj
1- Measured
at 1Junction
MHZ and applied
reverse voltage of 4.0 VDC.
2012-06
2012-0
IR
Thermal Resistance From Junction To Ambient
2- T
Thermal
Resistance
From
Junction to Ambient
Storage
Temperature
stg
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
80
100
150
200
Value
60
Unit
1.0
30
V
-100
-45
-55 to +125
40
120
V
-80
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH-5FM140-MH FM150-MH
V FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
15
50
-45
IFSM
BCX53
Collector-Emitter Voltage
Storage Temperature Range
VEBO
30
BCX51 Peak Forward Surge Current 8.3 ms single half sine-wave
VCBO
20
IO
Maximum Average Forward Rectified Current
14
40
0.50
0.70
0.85
-1
A
0.5
500
mW
10
250
℃/W
150
℃
-55~+150
℃
0.9
0.92
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCX51 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
unless
otherwise specified)
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
surface mounted application
in order
to
• Low profile
optimize board space.
power loss, high efficiency.
• LowParameter
Symbol
T est
conditions
• High current capability, low forward voltage drop.
• High surge capability.
BCX51
for overvoltage
protection. V(BR)CBO
• Guardring
IC=-100µA,IE=0
Collector-base
breakdown
voltage
• Ultra high-speed switching.
BCX53
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
BCX51
MIL-STD-19500
/228 voltage
Collector-emitter
breakdown
• RoHS product for packing code suffix "G"
V(BR)CEO*
V(BR)EBO
Unit
0.012(0.3) Typ.
V
0.071(1.8)
0.056(1.4)
-100
-45
V
-80
IE=-100µA,IC=0
-5
V
-0.1
-0.1
0.031(0.8) Typ.
hFE(1)*
VCE=-2V, IC=-5mA
0.040(1.0)
0.024(0.6)
µA
µA
0.031(0.8) Typ.
63
hFE(2)*
VCE=-2V, IC=-150mA
hFE(3)*
VCE=-2V, IC=-0.5A
VCE(sat)*
IC=-0.5A,IB=-50mA
-0.5
V
Base -emitter voltage
VBE*
VCE=-2V, IC=-0.5A
-1
V
Transition frequency
fT
• Polarity : Indicated by cathode band
• Mounting Position : Any
Collector-emitter
saturation voltage
• Weight : Approximated
0.011 gram
63
40
VCE=-5V,IC=-10mA, f=100MHz
50
im
Ratings at 25℃ ambient temperature unless otherwise specified.
* Pulse Test
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
CLASSIFICATIONRATINGS
OF hFE(2)
Maximum Recurrent Peak Reverse Voltage
Maximum
RMS Voltage
RANK
Maximum DC Blocking Voltage
12
13
20
30
VRRM BCX51-10
14
21
VRMS
BCX51
BCX53
VDC
RANGE
63–250
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
20
28
30
40
63–160
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
BCX53-10
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
56
70
105
140
50
60
80
100
150
200
BCX51-16
BCX53-16
IO
Maximum Average Forward Rectified Current
MHz
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
Marking Code
250
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Max
ina
ry
Method 2026
Typ
-45
BCX53
: UL94-V0
• Epoxy
VCB=-30V,IE=0
Collector
cut-off
currentrated flame retardant ICBO
Case : Molded plastic, SOD-123H
•
VEB=-5V,IC=0
IEBO
Emitter cut-off current
,
• Terminals :Plated terminals, solderable per MIL-STD-750
DC current gain
0.146(3.7)
0.130(3.3)
IC=-10mA,IB=0
Halogen free product for packing code suffix "H"
Mechanical
Emitter-base
breakdowndata
voltage
Min
1.0
30
100–250
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
BCX51
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M+
THRU
FM1200-M
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
Outline Drawing
SOT-89
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.181(4.60)
Halogen free product for packing code suffix "H"
Mechanical data .173(4.39)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
.061REFper MIL-STD-750 ,
• Terminals :Plated terminals, solderable
.063(1.60)
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
Method 2026
.055(1.40)
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.167(4.25)
RATINGS
.102(2.60)
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH.091(2.30)
12
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
Pr
el
.154(3.91)
Marking Code
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
.023(0.58)
20
VRRM
.016(0.40)
IO
Maximum Average Forward Rectified Current
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
TJ
TSTG
40
120
-55 to +125
-55 to +150
.197(0.52)
.013(0.32)
- 65 to +175
.017(0.44)
.014(0.35)
.118TYPSYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
(3.0)TYP VF
0.9
0.92
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
@T A=125℃
0.5
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCX51 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing low forward voltage drop.
• High current capability,
(3)
High surge capability.
•Part Number
–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
high-speed switching.
• Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
(3) CLASSIFICATION OF h
FE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
contained are intended to provide a product description only. "Typical" parameters V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
A
and do vary in different applications and actual performance may vary over time. Maximum
Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
A
superimposed on rated load (JEDEC method)
use of any product or circuit. ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
Pr
el
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
-55 to +125
TJ
WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range
Storage Temperature Range
TSTG
-55 to +150
- 65 to +175
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
applications where a failure or malfunction of component or circuitry may directly V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal
Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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