WILLAS FM120-M+ BCX55 THRU BCX56 FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. TRANSISTOR (NPN) capability. • High surge • Guardring for overvoltage protection. • Ultra high-speed switching. FEATURES • Silicon epitaxial planar chip, metal silicon junction. z PNP• Lead-free Complements to BCX51,BCX52,BCX53 parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 1. BASE MIL-STD-19500 /228 Low Voltage • RoHS product for packing code suffix "G" High Halogen Currentfree product for packing code suffix "H" Mechanical data Pb-Free package is available : UL94-V0 rated flame retardant • Epoxy RoHS product for packing code suffix ”G” Case : Molded plastic, SOD-123H • Halogen free product for packing code suffix “H” , • Terminals :Plated terminals, Moisture Sensitivity Level 1solderable per MIL-STD-750 z z z z 0.012(0.3) Typ. SOT-89 2. COLLECTOR 3. EMITTER 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 APPLICATIONS • Polarity : Indicated by cathode band z Driver StagesPosition of Audio Amplifiers : Any • Mounting • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MARKING: BCX55:BE, BCX55-10:BG, BCX55-16BM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS BCX56:BH, BCX56-10:BK, BCX56-16:BL Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 Maximum RMS Voltage VRMS noted) MAXIMUM RATINGS (Ta=25℃ unless otherwise Maximum DC Blocking Voltage Symbol VDC Parameter 20 IO BCX55 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Collector-Base Voltage VCBO Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Collector-Emitter Voltage Operating Temperature Range VCEO Storage Temperature Range VEBO BCX56RΘJA CJ BCX55 TJ TSTG BCX56 CHARACTERISTICS Emitter-Base Voltage Collector Current VF PC Collector Power Dissipation IR Maximum Average Reverse Current at @T A=25℃ RθJA NOTES: T 2012-0 115 150 120 200 28 35 42 56 70 105 140 50 60 80 100 150 200 Value 60 Unit 1.0 30 V 100 40 120 60 -55 to +125 V 80 0.50 1 A 0.70 250 ℃/W Junction Temperature 150 ℃ -55~+150 ℃ 2012-06 10 100 40 Thermal Resistance From Junction To Ambient @T A=125℃ Tstg Resistance Storage 2- Thermal FromTemperature Junction to Ambient 18 80 30 mW j 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 16 60 21 500 Rated DC Blocking Voltage 15 50 -55 to +150 - 65 to +175 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 5 FM140-MH FM150-MH V SYMBOL FM120-MH FM130-MH IC Maximum Forward Voltage at 1.0A DC 14 40 0.85 0.9 0.5 0.92 10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX55 THRU BCX56FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. conditions High current capability, low forwardSymbol voltage drop.T est • Parameter • High surge capability. BCX55 • Guardring for overvoltage protection. IC=100µA,IE=0 V(BR)CBO Collector-base voltage high-speed switching. • Ultrabreakdown BCX56 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 IC=10mA,IB=0 for packing code suffix V "G" • RoHS product Collector-emitter breakdown voltage (BR)CEO* Halogen free product for packing code suffix "H" Mechanical data Min 60 BCX56 80 V 0.040(1.0) 0.024(0.6) 0.1 µA Dimensions (millimeters) 63 in inches and250 25 B fT VCE=5V,IC=10mA, f=100MHz Transition frequency Ratings at 25℃ ambient temperature unless otherwise specified. 0.5 V 1 V 130 MHz Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% CLASSIFICATION OF hFE(2) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 0.031(0.8) Typ. 0.1 VCE=2V,CHARACTERISTICS IC 0.5A Base -emitter voltage BE*= MAXIMUM RATINGS ANDVELECTRICAL µA 40 = VCE=2V, IC 150mA C V 0.031(0.8) Typ. • Mounting Position : Any hFE(3)*= VCE=2V, IC 0.5A • Weight : Approximated 0.011 gram I =0.5A,I =50mA V Collector-emitter saturation voltage CE(sat)* V 0.071(1.8) 0.056(1.4) 5 hFE(1)*= VCE=2V, IC 5mA • Polarity DC current gain : Indicated by cathode band hFE(2)* Unit 0.012(0.3) Typ. 100 Emitter-base breakdown voltage Method 2026 Max 60 BCX55 = IE=100µA,IC 0 V(BR)EBO • Epoxy : UL94-V0 rated flame retardant = VCB=30V,IE 0 I Collector •cut-off current CBO Case : Molded plastic, SOD-123H = VEB=5V,IC , 0 IEBOper MIL-STD-750 Emitter cut-off current • Terminals :Plated terminals, solderable 0.146(3.7) 0.130(3.3) Typ Maximum Recurrent Peak Reverse VoltageBCX55 VRRM 12 20 BCX55-10 30 40 Maximum RMS Voltage RANK 21 28 BCX56-10 VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current 63–250 RANGE IO IFSM BCX56 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 14 30 40 15 50 16 18 60 BCX55-16 80 10 100 115 150 120 200 35 42 BCX56-16 56 70 105 140 50 60 100 150 200 80 1.0 100–250 30 63–160 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX55 THRU BCX56FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characteristics Static Characteristic Features 250 Pb Free Product Packagehoutline —— I FE 1000 C COMMON EMITTER VCE=2V better reverse leakage current and SOD-123H MIL-STD-19500 /228 Ta=100℃ 300 hFE 0.9mA optimize board space. 0.8mA power loss, high efficiency. • Low 150 0.7mA voltage drop. • High current capability, low forward • High surge capability. 0.6mA 100 for overvoltage protection. • Guardring 0.5mA • Ultra high-speed switching. 0.4mA 0.3mAjunction. epitaxial planar chip, metal silicon • Silicon 50 0.2mA of • Lead-free parts meet environmental standards DC CURRENT GAIN COLLECTOR CURRENT EMITTER thermal resistance. Ta=25℃ 200 1.0mA profile surface mounted application in order to • Low IC (mA) COMMON offers • Batch process design, excellent power dissipation 0.071(1.8) 0.056(1.4) 30 10 4 5 1 10 Halogen freeCOLLECTOR-EMITTER product for packing code suffix VOLTAGE VCE (V)"H" Mechanical data V —— I a a —— 1000 (mA) IC 0.040(1.0) 0.024(0.6) β=10 0.031(0.8) Typ. 0.031(0.8) Typ. 0.8 Dimensions in inches and (millimeters) T =25℃ a Ta=100℃ 0.6 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase 10 half wave, 60Hz, resistive of inductive load. 1 10 100 1000 For capacitive load, derate current by 20% COLLECTOR CURRENT I (mA) 0.4 1 10 IC —— 100 COLLECTOR CURRENT C IC 1000 (mA) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Cob/ Cib —— VCB/ VEB VBE VRRM 12 20 13300 30 14 40 15 50 16 60 18 80 Maximum RMS Voltage VRMS 14 21100 28 35 42ib C VDC 20 30 40 50 60 100 COLLECTOR CURRENT Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 10 Ta=25℃ RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1 0.2 0.6 0.8 BASE-EMITTER VOLTAGE CHARACTERISTICS Maximum Forward Voltage at 1.0Af DC—— T 500 (MHz) VBE 120 200 56 Ta=25 70℃ 105 140 V 80 100 150 200 V 30 ℃ -55 to +150 - 65 to +175 1 0.1 1 0.3 (V) 10 3 REVERSE BIAS VOLTAGE V 20 (V) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF IC 115 150 40 120 -55 to +125 @T A=125℃ 600 0.50 0.70 PC —— 0.5 IR fT NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. TRANSITION FREQUENCY 10 1.0 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Cob TSTG 0.4 10 f=1MHz 100 IE=0/IC=0 1.0 C IO IFSM Maximum Average Forward Rectified Current CAPACITANCE IC Ta=100℃ COLLECTOR POWER DISSIPATION PC (mW) (mA) COMMON EMITTER (pF) Maximum Recurrent VCE=2VPeak Reverse Voltage Maximum DC Blocking Voltage IC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS VBEsat 1.0 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) Method 2026 • Polarity : Indicated by cathode band 100 Position : Any • Mounting T =100℃ • Weight : Approximated 0.011 gram T =25℃ 1000 Marking Code 100 COLLECTOR CURRENT CEsat C 1000 : UL94-V0 rated flame retardant • Epoxy β=10 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 300 0.012(0.3) Typ. 100 IB=0.1mA 0 product1 for packing code suffix "G" • RoHS 0 2 3 30 0.146(3.7) 0.130(3.3) Ta=25℃ 100 2- Thermal Resistance From Junction to Ambient COMMON EMITTER VCE=5V 0.9 0.85 Ta 0.92 m 10 500 400 300 200 100 Ta=25℃ 10 10 2012-06 2012-0 100 30 COLLECTOR CURRENT IC (mA) 0 0 25 50 75 100 125 150 WILLAS ELECTRONIC CORP T (℃ ) AMBIENT TEMPERATURE a WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX55 THRU BCX56FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features Outline Drawing SOT-89 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 suffix "G" • RoHS product for packing code.181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .061REF • Terminals :Plated terminals, solderable per MIL-STD-750 (1.55)REF Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) .102(2.60) .091(2.30) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH RATINGS .154(3.91) Marking Code 12 .023(0.58) 20 V RRM .016(0.40) Maximum Recurrent Peak Reverse Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum.047(1.2) Average Forward Rectified Current IO IFSM Maximum RMS Voltage 13 30 Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 40 120 -55 .197(0.52) to +125 -55 to +150 - 65 to +175 .017(0.44) .013(0.32) .014(0.35) .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (3.0)TYP VF 0.9 0.92 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) Rev.C 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX55 THRU BCX56 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. Ordering loss, high efficiency. • Low powerInformation: 0.146(3.7) 0.130(3.3) low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) (1) (2) –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel Guardring for overvoltage protection. •Part Number Ultra high-speed switching. • Note: (1) CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS (3) CLASSIFICATION OF h RANK product for packing codeFE suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM contained are intended to provide a product description only. "Typical" parameters V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can A Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃ use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage WILLAS products are not designed, intended or authorized for use in medical, Temperature Range TSTG Marking Code life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumapplications where a failure or malfunction of component or circuitry may directly Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR or indirectly cause injury or threaten a life without expressed written approval m 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures . 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.