BCX55,BCX56(SOT 89)

WILLAS
FM120-M+
BCX55
THRU
BCX56 FM1200-M
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produ
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
TRANSISTOR
(NPN)
capability.
• High surge
• Guardring for overvoltage protection.
• Ultra high-speed switching.
FEATURES
• Silicon epitaxial planar chip, metal silicon junction.
z PNP• Lead-free
Complements
to BCX51,BCX52,BCX53
parts meet
environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
1. BASE
MIL-STD-19500 /228
Low Voltage
• RoHS product for packing code suffix "G"
High Halogen
Currentfree product for packing code suffix "H"
Mechanical
data
Pb-Free
package is
available
: UL94-V0
rated flame
retardant
• Epoxy
RoHS
product
for packing
code
suffix ”G”
Case
:
Molded
plastic,
SOD-123H
•
Halogen free product for packing code suffix “H”
,
• Terminals
:Plated terminals,
Moisture
Sensitivity
Level 1solderable per MIL-STD-750
z
z
z
z
0.012(0.3) Typ.
SOT-89
2. COLLECTOR
3. EMITTER
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
APPLICATIONS
• Polarity : Indicated by cathode band
z Driver
StagesPosition
of Audio
Amplifiers
: Any
• Mounting
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MARKING: BCX55:BE, BCX55-10:BG, BCX55-16BM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
BCX56:BH,
BCX56-10:BK,
BCX56-16:BL
Ratings at 25℃ ambient temperature
unless otherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
14
Maximum RMS
Voltage
VRMS
noted)
MAXIMUM
RATINGS
(Ta=25℃ unless otherwise
Maximum DC Blocking Voltage
Symbol
VDC
Parameter
20
IO
BCX55
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Collector-Base Voltage
VCBO
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Collector-Emitter Voltage
Operating Temperature Range
VCEO
Storage Temperature Range
VEBO
BCX56RΘJA
CJ
BCX55 TJ
TSTG
BCX56
CHARACTERISTICS
Emitter-Base
Voltage
Collector Current
VF
PC
Collector Power Dissipation
IR
Maximum Average Reverse Current at @T A=25℃
RθJA
NOTES:
T
2012-0
115
150
120
200
28
35
42
56
70
105
140
50
60
80
100
150
200
Value
60
Unit
1.0
30
V
100
40
120
60
-55 to +125
V
80
0.50
1
A 0.70
250
℃/W
Junction Temperature
150
℃
-55~+150
℃
2012-06
10
100
40
Thermal Resistance From Junction To Ambient
@T A=125℃
Tstg Resistance
Storage
2- Thermal
FromTemperature
Junction to Ambient
18
80
30
mW
j
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
16
60
21
500
Rated DC Blocking Voltage
15
50
-55 to +150
- 65 to +175
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
5 FM140-MH FM150-MH
V
SYMBOL FM120-MH FM130-MH
IC
Maximum Forward Voltage at 1.0A DC
14
40
0.85
0.9
0.5
0.92
10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCX55
THRU
BCX56FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
conditions
High current capability, low forwardSymbol
voltage drop.T est
• Parameter
• High surge capability.
BCX55
• Guardring for overvoltage protection.
IC=100µA,IE=0
V(BR)CBO
Collector-base
voltage
high-speed switching.
• Ultrabreakdown
BCX56
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
IC=10mA,IB=0
for packing
code suffix V
"G"
• RoHS product
Collector-emitter
breakdown
voltage
(BR)CEO*
Halogen free product for packing code suffix "H"
Mechanical data
Min
60
BCX56
80
V
0.040(1.0)
0.024(0.6)
0.1
µA
Dimensions
(millimeters)
63 in inches and250
25
B
fT
VCE=5V,IC=10mA, f=100MHz
Transition
frequency
Ratings at
25℃ ambient temperature unless otherwise
specified.
0.5
V
1
V
130
MHz
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
CLASSIFICATION OF
hFE(2)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
0.031(0.8) Typ.
0.1
VCE=2V,CHARACTERISTICS
IC 0.5A
Base -emitter voltage
BE*=
MAXIMUM RATINGS ANDVELECTRICAL
µA
40
=
VCE=2V, IC 150mA
C
V
0.031(0.8) Typ.
• Mounting Position : Any
hFE(3)*=
VCE=2V, IC 0.5A
•
Weight : Approximated 0.011 gram
I =0.5A,I =50mA
V
Collector-emitter saturation voltage
CE(sat)*
V
0.071(1.8)
0.056(1.4)
5
hFE(1)*=
VCE=2V, IC 5mA
• Polarity
DC current
gain : Indicated by cathode band hFE(2)*
Unit
0.012(0.3) Typ.
100
Emitter-base breakdown voltage
Method 2026
Max
60
BCX55
=
IE=100µA,IC 0
V(BR)EBO
• Epoxy : UL94-V0 rated flame retardant
=
VCB=30V,IE 0
I
Collector •cut-off
current
CBO
Case : Molded plastic, SOD-123H
=
VEB=5V,IC , 0
IEBOper MIL-STD-750
Emitter cut-off
current
• Terminals
:Plated terminals, solderable
0.146(3.7)
0.130(3.3)
Typ
Maximum Recurrent Peak Reverse VoltageBCX55
VRRM
12
20
BCX55-10
30
40
Maximum
RMS Voltage
RANK
21
28
BCX56-10
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum
Average Forward Rectified Current
63–250
RANGE
IO
IFSM
BCX56
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
13
14
30
40
15
50
16
18
60 BCX55-16
80
10
100
115
150
120
200
35
42 BCX56-16
56
70
105
140
50
60
100
150
200
80
1.0
100–250
30
63–160
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCX55 THRU
BCX56FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Typical Characteristics
Static Characteristic
Features
250
Pb Free Product
Packagehoutline
—— I
FE
1000
C
COMMON EMITTER
VCE=2V
better reverse leakage current and
SOD-123H
MIL-STD-19500 /228
Ta=100℃
300
hFE
0.9mA
optimize board space.
0.8mA
power loss, high efficiency.
• Low
150
0.7mA voltage drop.
• High current capability, low forward
• High surge capability.
0.6mA
100
for overvoltage protection.
• Guardring
0.5mA
• Ultra high-speed switching.
0.4mA
0.3mAjunction.
epitaxial planar chip, metal silicon
• Silicon
50
0.2mA
of
• Lead-free parts meet environmental standards
DC CURRENT GAIN
COLLECTOR CURRENT
EMITTER
thermal
resistance.
Ta=25℃
200
1.0mA
profile surface mounted application in order to
• Low
IC
(mA)
COMMON
offers
• Batch process design, excellent power dissipation
0.071(1.8)
0.056(1.4)
30
10
4
5
1
10
Halogen freeCOLLECTOR-EMITTER
product for packing
code suffix
VOLTAGE
VCE (V)"H"
Mechanical data
V
——
I
a
a
——
1000
(mA)
IC
0.040(1.0)
0.024(0.6)
β=10
0.031(0.8) Typ.
0.031(0.8) Typ.
0.8
Dimensions
in inches and (millimeters)
T =25℃
a
Ta=100℃
0.6
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
10 half wave, 60Hz, resistive of inductive load.
1
10
100
1000
For capacitive load, derate
current by 20%
COLLECTOR CURRENT I
(mA)
0.4
1
10
IC
——
100
COLLECTOR CURRENT
C
IC
1000
(mA)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Cob/ Cib —— VCB/ VEB
VBE
VRRM
12
20
13300
30
14
40
15
50
16
60
18
80
Maximum RMS Voltage
VRMS
14
21100
28
35
42ib
C
VDC
20
30
40
50
60
100
COLLECTOR CURRENT
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
10
Ta=25℃
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature
Range
1
0.2
0.6
0.8
BASE-EMITTER VOLTAGE
CHARACTERISTICS
Maximum Forward Voltage at 1.0Af DC——
T
500
(MHz)
VBE
120
200
56
Ta=25
70℃
105
140
V
80
100
150
200
V
30
℃
-55 to +150
- 65 to +175
1
0.1
1
0.3
(V)
10
3
REVERSE BIAS VOLTAGE
V
20
(V)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
IC
115
150
40
120
-55 to +125
@T A=125℃
600
0.50
0.70
PC ——
0.5
IR
fT
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
TRANSITION FREQUENCY
10
1.0
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Cob TSTG
0.4
10
f=1MHz
100
IE=0/IC=0
1.0
C
IO
IFSM
Maximum Average Forward Rectified Current
CAPACITANCE
IC
Ta=100℃
COLLECTOR POWER DISSIPATION
PC (mW)
(mA)
COMMON EMITTER
(pF)
Maximum Recurrent
VCE=2VPeak Reverse Voltage
Maximum DC Blocking Voltage
IC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
VBEsat
1.0
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
Method 2026
• Polarity : Indicated by cathode band
100
Position : Any
• Mounting
T =100℃
• Weight : Approximated 0.011 gram
T =25℃
1000
Marking Code
100
COLLECTOR CURRENT
CEsat
C
1000
: UL94-V0 rated flame retardant
• Epoxy
β=10
• Case : Molded plastic, SOD-123H
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
300
0.012(0.3) Typ.
100
IB=0.1mA
0
product1 for packing
code suffix
"G"
• RoHS
0
2
3
30
0.146(3.7)
0.130(3.3)
Ta=25℃
100
2- Thermal Resistance From Junction to Ambient
COMMON EMITTER
VCE=5V
0.9
0.85
Ta
0.92
m
10
500
400
300
200
100
Ta=25℃
10
10
2012-06
2012-0
100
30
COLLECTOR CURRENT
IC
(mA)
0
0
25
50
75
100
125
150
WILLAS
ELECTRONIC CORP
T (℃ )
AMBIENT TEMPERATURE
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCX55
THRU
BCX56FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
Outline Drawing
SOT-89
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
suffix "G"
• RoHS product for packing code.181(4.60)
Halogen free product for packing code suffix "H"
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.061REF
• Terminals :Plated terminals, solderable
per MIL-STD-750
(1.55)REF
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
.102(2.60)
.091(2.30)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH
RATINGS
.154(3.91)
Marking Code
12
.023(0.58)
20
V
RRM
.016(0.40)
Maximum Recurrent Peak Reverse Voltage
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum.047(1.2)
Average Forward Rectified Current
IO
IFSM
Maximum RMS Voltage
13
30
Peak Forward
Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
40
120
-55 .197(0.52)
to +125
-55 to +150
- 65 to +175
.017(0.44)
.013(0.32)
.014(0.35)
.118TYP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
(3.0)TYP VF
0.9
0.92
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
@T A=125℃
0.5
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
Rev.C
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCX55
THRU
BCX56
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
Ordering
loss, high efficiency.
• Low powerInformation:
0.146(3.7)
0.130(3.3)
low forward voltage drop.
• High current capability,
Device PN Packing • High surge capability.
(3)
(1) (2)
–SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel Guardring for overvoltage
protection.
•Part Number
Ultra
high-speed
switching.
•
Note: (1) CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” parts meet environmental standards of
• Lead-free
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS
(3) CLASSIFICATION OF h
RANK product for packing codeFE suffix
"G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃
ambient temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
contained are intended to provide a product description only. "Typical" parameters V
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
V
Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can A
Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method)
℃
use of any product or circuit. 40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storage WILLAS products are not designed, intended or authorized for use in medical, Temperature Range
TSTG
Marking Code
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumapplications where a failure or malfunction of component or circuitry may directly Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
or indirectly cause injury or threaten a life without expressed written approval m
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal
Resistance
From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
Similar pages