DDdϯϵϬϰEϯdϱ EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ PRIMARY CHARACTERISTICS PD SOT-883 250mW Marking Code: 1A VCEO 40Vdc IC 200mAdc VCE(sat) 0.2Vdc hFE 100~300 TJ Max 150℃ MARKING DIAGRAM 3 1A M 1A M 2 1 = Device Code = Date Code PACKAGE 3 Date Code List Month Odd Year Even Year Jan 1 E Feb 2 F Mar 3 H Apr 4 J May 5 K Jun 6 L Jul 7 N Aug 8 P Sep 9 U Oct T X Nov V Y Dec C Z 2 1 3 COLLECTOR 1 BASE 2 EMITTER FEATURES MECHANICAL DATA We declare that the material of CASE：Molded Glass SOT-883 product requirements. POLARITY：See diagram above Moisture Sensitivity Level 1 TERMINALS：Solderable per MIL-STD-750, Method 2026 MOUNTING POSITION : Any MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 200 mAdc Collector Current — Continuous IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 250 mW RθJA 2 500 mW/°C °C/W TJ , Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 40 — Vdc V (BR)CBO 60 — Vdc V (BR)EBO 6.0 — Vdc Base Cutoff Current I BL — 50 nAdc ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current I CEX — 50 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (I C = 1.0 mAdc) Collector–Base Breakdown Voltage (I C = 10 µAdc) Emitter–Base Breakdown Voltage (I E = 10 µAdc) ( V CE = 30Vdc, V EB = 3.0Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 201ϱ.Ϭϭ www.willas.com.tw Rev. >0ϭ DDdϯϵϬϰEϯdϱ EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 40 70 100 60 30 –– –– 300 –– –– –– –– 0.2 0.3 0.65 –– 0.85 0.95 fT 300 –– MHz C obo –– 4.0 pF C ibo –– 8.0 pF h ie 1.0 10 kW h re 0.5 8.0 X10 –4 h fe 100 400 — h oe 1.0 40 NF — 5.0 td tr ts tf — — — — 35 35 200 50 ON CHARACTERISTICS (3) DC Current Gain(1) (I C =0.1 mAdc, V CE =1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50mAdc, V CE = 1.0Vdc) (I C = 100mAdc, V CE =1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc)(3) (I C = 50 mAdc, I B = 5.0mAdc) Base–Emitter Saturation Voltage(3) (I C = 10 mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc ) hFE VCE(sat) V BE(sat) –– Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = 5.0Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5Vdc, I C = 0, f = 1.0 MHz) Input Impedancen (V CE = 10Vdc, I C = 1.0mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0 k Ω, f = 1.0 kHz) mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3.0 Vdc,V BE = –0.5Vdc I C = 10 mAdc, I B1 = 1.0mAdc) (V CC = 3.0Vdc, I C = 10 mAdc,I B1 = I B2 = 1.0 mAdc) ns ns 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 201ϱ.Ϭϭ www.willas.com.tw Rev. >0ϭ DDdϯϵϬϰEϯdϱ EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms DUTY CYCLE = 2% 275 t1 +3 V +10.9 V 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 1000 hFE, DC CURRENT GAIN 600 td@Vob=1V, IC/IB=10 500 TIME (ns) 400 300 VCE=1V 100 200 100 10 0 0 50 100 150 200 250 1 10 IC, COLLECTOR CURRENT (mA) Vcc=0V Vcc=2V Vcc=3V Vcc=15V Vcc=40V 1000 -55℃ 25℃ 75℃ 100℃ 125℃ Fig.4 DC CURRENT GAIN Fig.3 TURN-ON TIME 201ϱ.Ϭϭ 100 IC, COLLECTOR CURRENT (mA) www.willas.com.tw Rev. >0ϭ DDdϯϵϬϰEϯdϱ EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 0.3 600 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE(V) t r, RISE TIME (ns) IC/IB=10 Vcc=40V , IC/IB=10 500 400 300 200 100 0 0 50 100 150 200 0.25 0.2 0.15 0.1 0.05 0 0.001 250 0.01 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) 25℃ 0.1 125℃ -55℃ 25℃ 75℃ 100℃ 125℃ Fig.6 COLLECTOR EMITTER SATURATION Fig.5 RISE TIME VOLTAGE VS. COLLECTOR CURRENT 1000 1.4 IC/IB=10 100 10 1 0 50 100 150 200 250 1.2 1 VOLTAGE(V) VBE(sat), BASE-EMITTER SATURATION t s, STORAGE TIME (ns) ts'=ts-1/8tf IB1=IB2 0.8 0.6 0.4 0.2 0 0.0001 IC/IB=10 125℃ IC/IB=20 25℃ IC/IB=10 25℃ Fig.7 STORAGE TIME 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) IC/IB=20 125℃ 0.001 -55℃ 25℃ 75℃ 100℃ 125℃ Fig.8 BASE EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 201ϱ.Ϭϭ www.willas.com.tw Rev. >0ϭ DDdϯϵϬϰEϯdϱ EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 1000 1.4 VBE(on), BASE-EMITTER VOLTAGE(V) Vcc=40V, IB1=IB2 t f , FALL TIME (ns) 100 10 1 0 50 100 150 200 VCE=1V 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 250 0.001 IC, COLLECTOR CURRENT (mA) IC/IB=20 125℃ IC/IB=10 125℃ IC/IB=20 25℃ IC/IB=10 25℃ 0.01 0.1 1 IC, COLLECTOR CURRENT (A) -55℃ 25℃ 75℃ 100℃ 125℃ Fig.10 BASE EMITTER VOLTAGE VS. Fig.9 FALL TIME COLLECTOR CURRENT 1000 4.5 VCE=1V CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 100 PRODUCT (MHz) fT,CURRENT-GAIN-BANDWIDTH 4 10 0.5 0 1 0 10 20 30 40 50 0.1 REVERSE BIAS VOLTAGE (V) Cib(pF) 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Cob(pF) Fig.11 CAPACITANCE Fig.12 CURRENT GAIN BANDWIDTH PRODUCT VS.COLLECTOR CURRENT 201ϱ.Ϭϭ www.willas.com.tw Rev. >0ϭ DDdϯϵϬϰEϯdϱ EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ Outline Drawing DIMENSION OUTLINE: SOT-3 Unit:mm Dimensions in inches and (millimeters) 201ϱ.Ϭϭ www.willas.com.tw Rev.$ Rev. >0ϭ DDdϯϵϬϰEϯdϱ EWE'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ Ordering Information: Device PN DDdϯϵϬϰEϯdϱ ‐T(1) ,(2)‐WS Note: (1) Packing code, Tape & Reel Packing Packing Tape&Reel: ϭϬ Kpcs/Reel (2) Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. This is the preliminary specification. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 201ϱ.Ϭϭ www.willas.com.tw Rev. >0ϭ