UTMC APPLICATION NOTE _______________________________________________________________ UT22VP10 RADPAL Characterization Summary Table 1: AC Electrical Characterization Summary 1/96 Parameter Sample Size Worst Case Conditions tPD 56 17.3ns -55°C,+125°C tEA 3 21.1ns -55°C,+125°C tER 3 19.26ns -55°C,+125°C tH 56 0.40ns -55°C,+125°C tSU 56 7.6ns -55°C,+125°C tP 56 19.5ns -55°C,+125°C tCO 56 11.9ns -55°C,+125°C tCO2 56 21.1ns -55°C,+125°C tWL 4 <10.0ns -55°C,+125°C tWH 4 <10.0ns -55°C,+125°C tCF 1 8.0ns -55°C,+125°C tAW 56 8.5ns -55°C,+125°C tAR 56 2.3ns -55°C,+125°C tAP 56 15.4ns -55°C,+125°C tSPR 56 1.3ns -55°C,+125°C fMAX1 56 51.3MHz -55°C,+125°C fMAX2 56 >50.0 MHz -55°C,+125°C fMAX3 56 50.2 MHz -55°C,+125°C Page 1 of 2 Table 2: DC Electrical Characterization Summary 1/96 Parameter Sample Size Worst Case Conditions VIL 4 2.16V CMOS -55°C,+125°C VIH 4 2.36V CMOS -55°C,+125°C VIL 4 1.48V TTL -55°C,+125°C VIH 4 2.06V TTL -55°C,+125°C VOL 5 0.007V CMOS -55°C,+125°C VOH 5 4.465V CMOS -55°C,+125°C VOL 5 0.252V TTL -55°C,+125°C VOH 5 4.373V TTL -55°C,+125°C IIN 10 0.032µA -55°C,+125°C IOS 2 123.55mA -55°C,+125°C IOZ 10 1.886µA -55°C,+125°C ICC 4 98.4mA -55°C,+125°C ESD 3 <500V 25°C Page 2 of 2