BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE IC BUP 307D 1200V 35A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4221-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 35 TC = 90 °C 23 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 70 TC = 90 °C 46 IF Diode forward current TC = 90 °C 18 Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C 108 Ptot Power dissipation TC = 25 °C W 300 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group Unit 1 °C Dec-02-1996 BUP 307D Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC ≤ 0.42 Diode thermal resistance, chip case RthJCD ≤ 1.25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.35 mA, Tj = 25 °C V 4.5 5.5 6.5 VGE = 15 V, IC = 25 A, Tj = 25 °C - 2.7 3.2 VGE = 15 V, IC = 25 A, Tj = 125 °C - 3.3 3.9 VGE = 15 V, IC = 42 A, Tj = 25 °C - 3.4 - VGE = 15 V, IC = 42 A, Tj = 125 °C - 4.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current mA - - 0.5 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 15 A Input capacitance 5.5 pF - 2000 2700 - 160 240 - 65 100 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 8 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Dec-02-1996 BUP 307D Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Ω Rise time - 30 45 - 22 35 - 230 310 - 20 28 tr VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω Total turn-off loss energy Eoff mWs VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω, Tj = 25 °C - 1.7 - Free-Wheel Diode Diode forward voltage VF V IF = 15 A, VGE = 0 V, Tj = 25 °C - 2.4 2.95 IF = 15 A, VGE = 0 V, Tj = 125 °C - 1.9 - Reverse recovery time trr ns IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - - - Tj = 125 °C - 100 150 Reverse recovery charge Qrr µC IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 1 1.8 Tj = 125 °C - 3 5.4 Semiconductor Group 3 Dec-02-1996 BUP 307D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Ptot Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 320 36 W A IC 240 28 24 200 20 160 16 120 12 80 8 40 4 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 t = 7.9µs p 10 µs A K/W IC ZthJC 100 µs 10 1 10 -1 1 ms D = 0.50 0.20 10 ms 10 0 10 -2 0.10 0.05 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 3 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Dec-02-1996 BUP 307D Typ. output characteristics Typ. transfer characteristics IC = f(VCE) IC = f (VGE) parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) VCE(sat) = f (VGE) parameter: Tj = 25 °C parameter: Tj = 125 °C Semiconductor Group 5 Dec-02-1996 BUP 307D Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 20 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 20 V VGE 16 400 V 800 V 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 nC 180 Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 I Csc/I C(90°C) ICpuls/ IC 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 6 0 200 400 600 800 1000 1200 V 1600 Dec-02-1996 BUP 307D Typ. switching time t = f (RG), inductive load, Tj = 125 °C parameter: VCE = 600 V, VGE = ± 15 V, IC = 15 A Typ. forward characteristics Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IF = f (VF) parameter: Tj Diode 10 1 30 A K/W 26 IF 24 ZthJC 10 0 22 20 18 Tj=125°C 16 Tj=25°C 10 -1 14 D = 0.50 12 0.20 0.10 10 0.05 10 -2 8 0.02 6 0.01 4 single pulse 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 7 Dec-02-1996