SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 V DS 650 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated 2 • High peak current capability 1 • Improved transconductance 2 3 1 23 P-TO220-3-31 P-TO220-3-1 • PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute) Type SPP07N65C3 Package PG-TO220 Marking 07N65C3 SPI07N65C3 PG-TO262-3 07N65C3 SPA07N65C3 PG-TO220-3 07N65C3 Maximum Ratings Unit Value Symbol Parameter SPP_I SPA A ID Continuous drain current TC = 25 °C 7.3 7.31) TC = 100 °C 4.6 4.61) Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A Avalanche energy, single pulse EAS 230 230 mJ EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 2.5 2.5 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 83 32 Operating and storage temperature T j , Tstg ID=1.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD =50V Rev. 1.91 Page 1 -55...+150 W °C 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, ID = 7.3 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=2.5A Values Unit min. typ. max. 650 - - - 730 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=350µA, VGS=VDS Zero gate voltage drain current I DSS VDS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 1.91 RG µA Tj=25°C - 0.5 1 Tj=150°C - - 100 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=4.6A Tj=25°C - 0.54 0.6 Tj=150°C - 1.46 - f=1MHz, open drain - 0.8 - Page 2 nA 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 6 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=4.6A Input capacitance Ciss V GS=0V, V DS=25V, - 790 - Output capacitance Coss f=1MHz - 260 - Reverse transfer capacitance Crss - 16 - - 30 - - 55 - Effective output capacitance,4) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 6 - Rise time tr ID=7.3A, RG=12Ω, - 3.5 - Turn-off delay time td(off) Tj=125°C - 60 100 Fall time tf - 7 15 - 3 - - 9.2 - - 21 27 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480V, ID=7.3A VDD=480V, ID=7.3A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=7.3A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 1.91 Page 3 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 Electrical Characteristics Symbol Parameter Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 7.3 - - 21.9 TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , - 400 600 ns Reverse recovery charge Qrr diF/dt=100A/µs - 4 - µC Peak reverse recovery current Irrm - 28 - A Peak rate of fall of reverse dirr /dt - 800 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP_I SPA Rth1 0.024 0.024 Rth2 0.046 Rth3 Symbol Value Unit SPP_I SPA Cth1 0.00012 0.00012 0.046 Cth2 0.0004578 0.0004578 0.085 0.085 Cth3 0.000645 0.000645 Rth4 0.308 0.195 Cth4 0.001867 0.001867 Rth5 0.317 0.45 Cth5 0.004795 0.007558 Rth6 0.112 2.511 Cth6 0.045 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 1.91 Page 4 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 100 SPP07N65C3 34 W W 28 80 24 Ptot Ptot 70 60 50 20 16 40 12 30 8 20 4 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( V DS ) ID = f (VDS) parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C 10 °C 2 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 1.91 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 V VDS 10 3 Page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2009-07-23 3 SPP07N65C3, SPI07N65C3 SPA07N65C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (t p) ZthJC = f (t p) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W ZthJC 10 0 ZthJC 10 0 10 -1 10 -2 10 -3 -7 10 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 s tp D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 1 s 10 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 13 24 A 20V 10V 8V A 20V 8V 6.5V 11 7V 6V 9 6,5V 16 ID ID 10 8 5.5V 7 12 6V 6 5V 5 8 5,5V 4 4.5V 3 5V 4 2 4,5V 0 0 Rev. 1.91 5 10 15 VDS 4V 1 0 0 25 V 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS Page 6 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 4.6 A, VGS = 10 V 10 3.4 4.5V 2.8 RDS(on) 8 RDS(on) Ω 4V Ω SPP07N65C3 7 5V 6 6V 6.5V 8V 20V 5 5.5V 4 2.4 2 1.6 1.2 3 98% 0.8 2 typ 0.4 1 0 0 2 4 6 8 10 12 0 -60 A 15 ID -20 20 60 100 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 7.3 A pulsed parameter: tp = 10 µs °C 24 16 SPP07N65C3 A V 25°C 20 12 16 VGS ID 18 14 0,2 VDS max 10 0,8 VDS max 150°C 12 8 10 6 8 6 4 4 2 2 0 0 Rev. 1.91 2 4 6 8 10 12 14 16 0 0 V 20 VGS 4 8 12 16 20 24 28 nC 34 Q Gate Page 7 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 13 Forward characteristics of body diode 14 Typ. switching time IF = f (VSD) t = f (ID), inductive load, T j=125°C parameter: Tj , tp = 10 µs par.: V DS=380V, VGS=0/+13V, R G=12Ω 2 SPP07N65C3 10 90 ns A td(off) 70 10 1 t IF 60 50 40 10 0 30 tf td(on) tr Tj = 25 °C typ Tj = 150 °C typ 20 Tj = 25 °C (98%) 10 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 1 2 3 4 5 6 VSD A ID 15 Typ. switching time 16 Typ. drain current slope t = f (RG), inductive load, Tj=125°C di/dt = f(R G), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3 A par.: V DS=380V, VGS=0/+13V, ID=7.3A 500 8 3000 ns A/µs 400 di/dt t 350 300 250 2000 1500 td(off) 200 di/dt(on) 1000 150 td(on) tf tr 100 500 di/dt(off) 50 0 0 Rev. 1.91 20 40 60 80 100 0 0 Ω 130 RG Page 8 20 40 60 80 100 Ω 130 RG 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 17 Typ. drain source voltage slope 18 Typ. switching losses dv/dt = f(RG), inductive load, Tj = 125°C E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: V DS=380V, VGS=0/+13V, R G=12Ω 100 0.025 V/ns diode commutation losses. mWs 80 70 E dv/dt *) E on includes SDP06S60 60 50 0.015 dv/dt(on) 40 Eoff 0.01 30 20 0.005 Eon* dv/dt(off) 10 0 0 20 40 60 80 0 0 120 Ω 1 2 3 RG 19 Typ. switching losses 20 Avalanche SOA E = f(RG), inductive load, Tj=125°C IAR = f (tAR) par.: VDS=380V, VGS=0/+13V,ID=11A par.: Tj ≤ 150 °C 0.2 mWs 4 5 6 A ID 8 *) Eon includes SDP06S60 diode commutation losses. 0.16 E 0.14 0.12 0.1 Eoff 0.08 0.06 Eon* 0.04 0.02 0 0 Rev. 1.91 20 40 60 80 100 Ω 130 RG Page 9 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 21 Avalanche energy 22 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 1.5 A, V DD = 50 V 785 260 mJ SPP07N65C3 V 220 745 V(BR)DSS EAS 200 180 160 140 725 705 685 120 100 665 80 645 60 625 40 605 20 0 20 40 60 80 100 120 °C 585 -60 160 -20 20 60 100 °C Tj 180 Tj 23 Avalanche power losses 24 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz 10 4 500 pF W Ciss C PAR 10 3 300 10 2 Coss 200 10 1 100 0 4 10 10 5 MHz 10 6 100 200 300 400 V 600 VDS f Rev. 1.91 10 0 0 Crss Page 10 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 25 Typ. Coss stored energy Eoss=f(VDS) 5.5 µJ 4.5 Eoss 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 1.91 Page 11 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 Rev. 1.91 Page 12 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO-220-3 (FullPAK) Rev. 1.91 Page 13 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO262-3, PG-TO262-3 (I²-PAK) Rev. 1.91 Page 14 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 Rev. 1.91 Page 15 2009-07-23