5962-13206

REVISIONS
LTR
DESCRIPTION
A
DATE (YR-MO-DA)
APPROVED
14-02-24
C. SAFFLE
Make corrections to delta limits for VIL and VIH parameters in Table IIB. -rrp
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PMIC N/A
PREPARED BY
RAJESH PITHADIA
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
14-02-11
REVISION LEVEL
A
MICROCIRCUIT, DIGITAL-LINEAR, VOLTAGE
SUPERVISOR, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-13206
1 OF 25
5962-E197-14
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
13206
RHA
designator
(see 1.2.1)
01
Q
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device types. The device types identify the circuit function as follows:
Device type
Generic number
01
UT04VS33P
02
UT04VS50P
Circuit function
Radiation hardened, 3.3 V
voltage supervisor
Radiation hardened, 5.0 V
voltage supervisor
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1
Terminals
28
Package style
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
MICROCIRCUIT DRAWING
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APR 97
SIZE
5962-13206
A
REVISION LEVEL
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SHEET
2
1.3 Absolute maximum ratings. 1/
Positive supply voltage (VDD):
Device type 01 ..............................................................................
Device type 02 ..............................................................................
Voltage range on any I/O pin (VIO).....................................................
DC I/O current (IIO) ...........................................................................
Power dissipation (PD) ......................................................................
Lead temperature (soldering, 10 seconds) .......................................
Junction temperature (TJ) .................................................................
Storage temperature range ..............................................................
Thermal resistance, junction-to-case (θJC) ........................................
4.8 V
7.2 V
-0.3 V to (VDD + 0.3 V)
±10 mA
1.0 W
+300°C
+175°C
-65°C to +150°C
16°C/W
1.4 Recommended operating conditions.
Positive supply voltage range (VDD):
Device type 01 .........................................................................
Device type 02 .........................................................................
Negative supply voltage (VSS) ...........................................................
Analog input voltage range (VIN) .......................................................
Digital input voltage range (VIN) ........................................................
Case operating temperature range (TC) ............................................
3.0 V to 3.6 V
4.5 V to 5.5 V
0V
0.6 V to 3.6 V
VSS to VDD
-55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s): ........................... 300 krads(Si) 2/
Single event phenomena (SEP):
2
No single event latchup (SEL) occurs at effective LET ....................................... ≤ 110 MeV/mg/cm 3/
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
Method 1019, condition A to maximum total dose of 300 krads(Si).
3/
Limits are characterized at initial qualification and after any design or process changes which may affect the SEP
characteristics but are not production tested. See manufacturer’s Single Event Effects test report for more information.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13206
A
REVISION LEVEL
A
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of semiconductor Devices.
(Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA, 19428-2959).
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth tables. The truth tables shall be as specified on figure 3.
3.2.4 Quad input voltage threshold selection table. The quad input voltage threshold selection table shall be as specified on
figure 4.
3.2.5 Analog input resistance referenced to Vss table. The analog input resistance referenced to VSS table shall be as
specified on figure 5.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13206
A
REVISION LEVEL
A
SHEET
4
3.2.6 Block diagrams. The block diagrams shall be as specified on figure 6.
3.2.7 Timing waveforms. The timing waveforms shall be as specified on figures 7 through 9.
3.2.8 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the
full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
A
SHEET
5
TABLE IA. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/ 3/
Group A Device
subgroups type
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Limits
Min
Unit
Max
Power supply section
Supply current
IDD
All VOUTX high
1, 2, 3
01, 02
1250
μA
Digital inputs and outputs section
Digital input low voltage
VIL
1, 2, 3
01, 02
-0.3
0.3xVDD
V
Digital input high voltage
VIH
1, 2, 3
01, 02
0.7xVDD
VDD+0.3
V
Manual reset (MRB) digital
input low voltage
VILMRB
1, 2, 3
01, 02
-0.3
0.8
V
Manual reset (MRB) digital
input high voltage
VIHMRB
1, 2, 3
01, 02
2.0
VDD+0.3
V
Manual reset (MRB) input
voltage hysteresis
VHYSTMRB
1, 2, 3
01, 02
60
Manual reset (MRB) pull-up
current
IMRB
MRB = 0 V,
VDD = 3.6 V for max IMRB
1, 2, 3
01
225
MRB = 0 V,
VDD = 5.5 V for max IMRB
1, 2, 3
02
330
VDD = 3.6 V, ISINK = 1 mA
1, 2, 3
01
0.3
02
0.3
Open drain digital output low VOL
voltage
VDD = 5.5 V, ISINK = 1 mA
Charge current CRESET 4/
ICH_RESET
mV
VDD = 3.0 V
1, 2, 3
01
0.35
1.25
VDD = 5.0 V
1, 2, 3
02
0.35
1.25
μA
V
μA
μA
Digital output leakage
current low
IOZL
1, 2, 3
01, 02
-1
1
Digital output leakage
current high
IOZH
1, 2, 3
01, 02
-1
1
Digital input leakage current
low
IIL
1, 2, 3
01, 02
-1
1
Digital input leakage current
high
IIH
1, 2, 3
01, 02
-1
1
Charge current CDLY 4/
ICH_CDLY
VDD = 3.0 V
1, 2, 3
01
0.55
1.90
VDD = 5.0 V
1, 2, 3
02
0.55
1.90
μA
μA
μA
μA
Threshold voltage CDLYX
4/
VTH_CDLY
CDLY rising
1, 2, 3
01, 02
1.17
1.23
V
Threshold voltage CRESET
4/
VTH_CRESET
CRESET rising
1, 2, 3
01, 02
1.17
1.23
V
Reference threshold voltage
4/
VRFTH
1, 2, 3
01, 02
585
615
mV
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13206
A
REVISION LEVEL
A
SHEET
6
TABLE IA. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Group A Device
subgroups type
3.3 V threshold, TOL = 0
1, 2, 3
Limits
Unit
Min
Max
2.97
3.135
3.3 V threshold, TOL = 1
2.805
2.970
2.5 V threshold, TOL = 0
2.25
2.375
2.5 V threshold, TOL = 1
2.125
2.250
1.8 V threshold, TOL = 0
1.620
1.710
1.8 V threshold, TOL = 1
1.530
1.620
1.5 V threshold, TOL = 0
1.350
1.425
1.5 V threshold, TOL = 1
1.275
1.350
1.2 V threshold, TOL = 0
1.080
1.140
1.2 V threshold, TOL = 1
1.020
1.080
1.0 V threshold, TOL = 0
0.90
0.950
1.0 V threshold, TOL = 1
0.85
0.915
Analog inputs section
Analog threshold
under-voltage case
VTH_VIN
Functional tests
01, 02
7, 8
See 4.4.1c
V
01, 02
AC characteristics section
VIN+ to VOUT propagation
delay
4/
tDELAY+
VIN rising, CDLY open
9, 10, 11
01, 02
11
60
VIN+ to VOUT propagation
delay
tDELAY+
VIN rising, Cdly capacitance 9, 10, 11
value on CDLYx = 112 pF,
01, 02
81
263
VIN- to VOUT propagation
delay
tDELAY-
VIN falling, see figure 9
9, 10, 11
01, 02
Reset timeout period
tRP
CRESET open
9, 10, 11
01, 02
37
170
tRP
Creset capacitance value
on CRESET = 65 pF,
9, 10, 11
01, 02
100
283
μs
μs
see figure 9
4/
Reset timeout period
μs
40
μs
μs
see figures 7 and 9
EN+ to VOUT propagation
delay
4/
tON
EN rising to VOUT going
high, CDLY open
9, 10, 11
01, 02
11
60
EN+ to VOUT propagation
delay
tON
EN rising to VOUT going
high, Cdly capacitance
value on CDLYx = 112 pF,
9, 10, 11
01, 02
81
263
EN- to VOUT propagation
delay
tOFF
9, 10, 11
01, 02
μs
μs
see figure 7
EN falling to VOUT
deasserted, see figure 7
μs
4
See footnotes at end of table.
STANDARD
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REVISION LEVEL
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SHEET
7
TABLE IA. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/ 3/
Group A Device
subgroups type
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Limits
Min
Unit
Max
AC characteristics section – continued.
MRB- to RESET/RESETB
propagation delay
tMRST
MRB falling to
9, 10, 11
01, 02
μs
5
RESET/RESETB
asserted,
see figure 8
μs
Minimum MRB input pulse
width
tMPW
See figure 8
9, 10, 11
01, 02
2.5
MRB+ to RESET/RESETB
propagation delay
tMRP
MRB rising to
RESET/RESETB
deasserted,
9, 10, 11
01, 02
3
VINx to RESET/RESETB
asserted
tRST_DELAY
9, 10, 11
01, 02
40
ENx or MRB glitch rejection
tGLITCH
9, 10, 11
01, 02
270
ns
VINx glitch rejection 4/
tGLITCH_VINx
9, 10, 11
01, 02
800
ns
μs
see figure 8
VIN falling, see figure 9
μs
1/
Unless otherwise specified, VDD = 3.0 V to 3.6 V for device type 01. VDD = 4.5 V to 5.5 V for device type 02.
2/
RHA device types 01 and 02 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation. However,
device types 01 and 02 are only tested at the F level in accordance with MIL-STD-883, method 1019, condition A
(see 1.5 herein).
Pre and Post irradiation values are identical unless otherwise specified in Table IA. When performing post irradiation
electrical measurements for any RHA level, TA = +25°C.
3/
RESET, RESETB, VOUT1, VOUT2, VOUT3, and VOUT4 guaranteed to be in the correct state for VDD down to 1.2 V
4/
Guaranteed by design or process but not tested.
TABLE IB. SEP test limits. 1/
Device type
01
02
No SEL, effective linear
energy transfer (LET)
SEP
Temperature (TC)
VDD
SEL
+125°C
3.6 V
≤ 110 MeV/mg/cm
SEL
+125°C
5.5 V
≤ 110 MeV/mg/cm
2
2
1/ For SEP test conditions, see 4.4.4.2 herein.
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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Case X
FIGURE 1. Case outline.
FIGURE 1. Case outline.
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REVISION LEVEL
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Case X
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
----
0.110
----
2.80
b
0.006
0.010
0.15
0.25
c
0.004
0.007
0.10
0.18
D
0.375
0.384
9.55
9.75
E
0.375
0.384
9.55
9.75
E2
0.274
0.286
6.96
7.26
E3
0.030
---
0.76
---
e
0.025 BSC
0.635 BSC
H
0.002
0.014
0.05
0.35
L
0.270
0.360
6.86
9.14
Q
0.002
0.020
0.05
0.51
S1
0.009
----
0.13
----
T
0.033 NOM
0.84 NOM
T1
0.018 NOM
0.46 NOM
N
28
28
NOTES:
1. The U.S. government preferred system of measurement is the metric SI system. However, since this item
was originally designed using the inch-pound units of measurement, in the event of conflict between the metric
and inch-pound units, the inch-pound units shall take precedence.
2. All exposed metallized areas are gold plated over electrically plated nickel per MIL-PRF-38535.
3. The seal ring is electrically connected to VSS.
4. Lead finishes are in accordance with MIL-PRF-38535.
5. Dimension symbology is in accordance with MIL-PRF-38535.
6. N is the maximum number of terminal positions.
FIGURE 1. Case outline – Continued.
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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Device types
01
Case Outline
02
X
Terminal
Number
Terminal
symbol
Terminal
symbol
1
EN1
EN1
2
VIN1
VIN1
3
EN3
EN3
4
VIN3
VIN3
5
NC
VDD_3V
6
OVSH
OVSH
7
TH1
TH1
8
TH0
TH0
9
TOL
TOL
10
EN2
EN2
11
VIN2
VIN2
12
EN4
EN4
13
VIN4
VIN4
14
VSS
VSS
15
CDLY4
CDLY4
16
VOUT4
VOUT4
17
CDLY2
CDLY2
18
VOUT2
VOUT2
19
RESET
RESET
20
CRESET
CRESET
21
RESETB
RESETB
22
INV
INV
23
MRB
MRB
24
CDLY3
CDLY3
25
VOUT3
VOUT3
26
CDLY1
CDLY1
27
VOUT1
VOUT1
28
VDD
VDD
NC = No connection.
FIGURE 2. Terminal connections.
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Terminal
symbol
Type
EN1
Digital input
VIN1
Analog input
EN3
Digital input
VIN3
Analog input
Description
Active high enable for VIN1. Setting this pin low forces VOUT1 low
regardless of the value of VIN1. Setting this pin high enables the
monitor circuitry for VIN1.
Analog input VIN1. When enabled, the voltage input is monitored
for an under-voltage condition. The condition is output on VOUT1.
Active high enable for VIN3. Setting this pin low forces VOUT3 low
when OVSH = 0 (VOUT3 is forced low when OVSH = 1) regardless
of the value of VIN3. Setting this pin high enables the monitor
circuitry for VIN3.
Analog input VIN3. When enabled and dependent on the mode of
operation (OVSH), the voltage input is monitored for an
under-voltage or over-voltage condition. The condition is output on
VOUT3 when OVSH = 0 and on VOUT1 when OVSH = 1.
NC
NC
VDD_3V
3 V regulated
supply
3.3 V internal regulator output voltage. This is an internal voltage
reference only. It is not provided as a regulated supply for external
use.
OVSH
Digital input
Over-voltage pin. When OVSH = 1, the over-voltage mode is
enabled. This allows for the monitoring of both over-voltage and
under-voltage of two supplies. Inputs VIN1 and VIN2 function
normally, while VIN3 is used to monitor an over-voltage condition in
conjunction with the VIN1 source and VIN4 likewise for the VIN2
source. When OVSH = 0 all four inputs, VIN1, VIN2, VIN3, and VIN4
monitor under-voltage.
TH1
Digital input
Digital Threshold select 1. Used with TH0 to select one of four
analog input voltage thresholds. See figure 4.
TH0
Digital input
Digital Threshold select 0. Used with TH1 to select one of four
analog input voltage thresholds. See figure 4.
TOL
Digital input
Threshold tolerance select sets the accuracy of the threshold to 5
percent below the nominal value by connecting TOL to logic 0.
Connecting TOL to logic 1 sets the threshold voltage to 10 percent
below the nominal value.
EN2
Digital input
Active high enable for VIN2. Setting this pin low forces VOUT2 low
regardless of the value of VIN2. Setting this pin high enables the
monitor circuitry for VIN2.
VIN2
Analog input
Analog input VIN2. When enabled, the voltage input is monitored
for an under-voltage condition. The condition is output on VOUT2.
EN4
Digital input
Active high enable for VIN4. Setting this pin low forces VOUT4 low
when OVSH = 0 (VOUT4 is forced low when OVSH = 1) regardless
of the value of VIN4. Setting this pin high enables the monitor
circuitry for VIN4.
No connection.
FIGURE 2. Terminal connections – Continued.
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Terminal
symbol
VIN4
Type
Description
Analog input
Analog input VIN4. When enabled and dependent on the mode of
operation (OVSH), the voltage input is monitored for an
under-voltage or over-voltage condition. The condition is output on
VOUT4 when OVSH = 0 and on VOUT2 when OVSH = 1.
VSS
Supply GND
CDLY4
Analog output
External capacitor delay connection. Allows adjustment of the
VOUT4 timing after VIN4 becomes valid, when OVSH = 0.
VOUT4
Open drain
digital output
Output of VIN4 monitor when OVSH = 0; inactive when OVSH = 1.
With INV = 0, logic 1 indicates that the VIN4 input is at a valid level.
With INV = 1, logic 0 indicates that VIN4 is at a valid level. Device
contains active pull-down device; requires external pull-up.
CDLY2
Analog output
External capacitor delay connection. Allows adjustment of the
VOUT2 timing after VIN2 becomes valid.
VOUT2
Open drain
digital output
When OVSH = 0, it indicates the signal state of the VIN2 monitor.
When OVSH = 1, it indicates the combined signal states for VIN2
and VIN4 (under-voltage and over-voltage detection). Device
contains active pull-down device; requires external pull-up.
RESET
Open drain
digital output
Active high output indicating a system reset condition is activated
by appropriate condition on VOUTx, ENx, or MRB pin. Device
contains active pull-down device; requires external pull-up.
CRESET
Analog output
External capacitor delay connection. Allows adjustment of RESET
timeout, which is the time RESET is held after all reset input
conditions are cleared.
RESETB
Open drain
digital output
Active low output indicating a system reset condition is activated by
appropriate condition on VOUTx, ENx, or MRB pin. Device contains
active pull-down device; requires external pull-up.
INV
Digital input
When logic 1, inverts the sense of the VOUT3 and VOUT4 outputs.
MRB
Digital input
internal pull-up
Manual Reset active low input. This forces the RESET/RESETB
pins to their active state.
CDLY3
Analog output
External capacitor delay connection. Allows adjustment of the
VOUT3 timing after VIN3 becomes valid, when OVSH = 0.
ASIC ground connection.
FIGURE 2. Terminal connections – Continued.
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MICROCIRCUIT DRAWING
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REVISION LEVEL
A
SHEET
13
Terminal
symbol
Type
Description
VOUT3
Open drain
digital output
Output of VIN3 monitor when OVSH = 0; inactive when OVSH = 1.
With INV = 0, logic 1 indicates that the VIN3 input is at a valid level.
With INV = 1, logic 0 indicates that VIN3 is at a valid level. Device
contains active pull-down device; requires external pull-up.
CDLY1
Analog output
External capacitor delay connection. Allows adjustment of the
VOUT1 timing after VIN1 becomes valid.
VOUT1
Open drain
digital output
When OVSH = 0, it indicates the signal state of the VIN1 monitor.
When OVSH = 1, it indicates the combined signal states for VIN1
and VIN3 (under-voltage and over-voltage detection). Device
contains active pull-down device; requires external pull-up.
VDD
Supply
ASIC supply voltage.
FIGURE 2. Terminal connections – Continued.
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Inputs
Outputs
ENx
INV
VINx
VOUT1
VOUT2
VOUT3
VOUT4
0
0
VINx < VTH
0
0
0
0
1
0
VINx < VTH
0
0
0
0
0
0
VINx > VTH
0
0
0
0
1
0
VINx > VTH
1
1
1
1
0
1
VINx < VTH
0
0
1
1
1
1
VINx < VTH
0
0
1
1
0
1
VINx > VTH
0
0
1
1
1
1
VINx > VTH
1
1
0
0
NOTE: Effect of INV on VOUT (TOL = X and OVSH = 0). ENx and VINx refer to the corresponding output.
Inputs
Outputs
ENx/ENy
INV
VINx/VINy
VOUT1
VOUT2
VOUT3
VOUT4
0
0
Any VINx and VINy
0
0
X
X
1
0
0
0
X
X
0
0
Any VINx and VINy
0
0
X
X
1
0
VTH < VINx and VINy < VTH_OVRV
1
1
X
X
0
1
Any VINx and VINy
0
0
X
X
1
1
0
0
X
X
0
1
Any VINx and VINy
0
0
X
X
1
1
VTH < VINx and VINy < VTH_OVRV
1
1
X
X
VINx < VTH or VINy > VTH_OVRV
VINx < VTH or VINy > VTH_OVRV
NOTES: 1. Effect of INV on VOUT (TOL = X and OVSH = 1). ENx/ENy refers to EN1 and EN3 or EN2 and EN4
respectively. VINx/VINy refers to VIN1 and VIN3 or VIN2 and VIN4 respectively. VOUT3/VOUT4
are not used in over-voltage mode.
2. Having all four enables low is an invalid state for the device operation. This state will not cause any
harm to the device or system, but operation may not be as expected.
3. For OVSH = 1, VTH_OVRV is the threshold which is set with external resistors to either the VIN3 or VIN4
input to monitor an over-voltage condition in conjunction with the under-voltage monitor by VIN1 or
VIN2, respectively.
FIGURE 3. Truth tables.
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TH1
TH0
VIN1
VIN2
VIN3
VIN4
0
0
3.3 V
2.5 V
1.8 V
1.5 V
0
1
3.3 V
1.8 V
1.5 V
1.2 V
1
0
3.3 V
1.5 V
1.2 V
1.0 V
1
1
ADJ
ADJ
ADJ
ADJ
NOTE: In adjustable mode (ADJ, TH1=TH0=1), external RT & RB resistors are used to adjust the analog
threshold voltage. VTH = [(RB/(RT+RB) ± 2.5%]*VRFTH. RT is the external resistor from the analog
threshold voltage monitored to the VINx pin. RB is the external resistor from the VINx pin to ASIC GND.
FIGURE 4. Quad input voltage threshold selection.
ANALOG INPUT RESISTANCE
NOTE:
THRESHOLD SELECT
MIN
MAX
UNIT
TH1
TH0
RIN1
0
0
94
160
kΩ
RIN2
0
0
282
485
kΩ
RIN3
0
0
205
355
kΩ
RIN4
0
0
172
295
kΩ
RIN1
0
1
94
160
kΩ
RIN2
0
1
205
355
kΩ
RIN3
0
1
172
295
kΩ
RIN4
0
1
137
235
kΩ
RIN1
1
0
94
160
kΩ
RIN2
1
0
172
295
kΩ
RIN3
1
0
137
235
kΩ
RIN4
1
0
114
197
kΩ
Resistance values listed are the estimated input resistances, referenced to VSS, seen at each of the VInx pins.
The resistance can be used to estimate the expected load current at that VInx input.
FIGURE 5 . Analog input resistance referenced to Vss.
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Device type 01
FIGURE 6. Block diagrams.
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Device type 02
FIGURE 6. Block diagrams – continued.
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FIGURE 7. ENx timing waveform.
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FIGURE 8. MRB timing waveform.
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FIGURE 9. VINx timing waveform.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
c.
For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
1, 7, 9
1, 7, 9
1, 2, 3, 7, 8,
9, 10, 11 1/
1, 2, 3, 7, 8,
9, 10, 11
1, 2, 3, 7, 8,
9, 10, 11
1, 2, 3, 7, 8,
9, 10, 11
1, 7, 9
1, 2, 3, 7, 8,
9, 10, 11 2/ 3/
1, 2, 3, 7, 8,
9, 10, 11
1, 2, 3, 7, 8,
9, 10, 11 3/
1, 2, 3, 7, 8,
9, 10, 11
1, 7, 9
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroups 1 and 9.
3/ Delta limits as specified in table IIB shall be required where specified, and the delta values shall
be computed with reference to previous interim electrical parameters. For device class V,
performance of delta limits shall be specified in the manufacturer’s QM plan.
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25°C. 1/
Parameters
Symbol
Device types
Delta limits
Supply current
IDD
01, 02
±125 µA
IIL, IIH
01, 02
±100 nA
IMRB
01
±22.5 µA
IMRB
02
±33 µA
VIL
01
±150mV
VIL
02
±250mV
VIH
01
±150mV
VIH
02
±250mV
VILMRB
01, 02
±150mV
VIHMRB
01, 02
±150mV
Digital input leakage
current
Manual reset (MRB)
pull-up current
Manual reset (MRB)
pull-up current
Digital input low
voltage
Digital input low
voltage
Digital input high
voltage
Digital input high
voltage
Manual reset (MRB)
digital input low
voltage
Manual reset (MRB)
digital input high
voltage
1/ These parameters shall be recorded before and after the required
burn-in and life tests to determine delta limits.
STANDARD
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4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table IA at TA = +25°C ±5°C, after exposure, to the subgroups specified in table
IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A, and as specified herein.
4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall
be the pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and
after any design or process changes which may affect the RHA response of the device.
4.4.4.2 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be required on
class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The test conditions for SEP are as follows:
a. The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive
(for example, 0° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
7
2
b. The fluence shall be ≥ 100 errors or ≥ 10 ions/cm .
2
5
2
c. The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d. The particle range shall be ≥ 20 micron in silicon.
e. The test temperature shall be +125°C and the maximum rated operating temperature ±10°C.
f. Bias conditions shall be defined by the manufacturer for latchup measurements.
g.
For SEL test limits, see Table IB herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
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6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA , Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein)
to DLA Land and Maritime -VA and have agreed to this drawing.
6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from
the device manufacturer:
a. RHA upset levels.
b. Test conditions (SEP).
c. Occurrence of latchup (SEL).
STANDARD
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 14-02-24
Approved sources of supply for SMD 5962-13206 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R1320601QXC
65342
UT04VS33PQXC
5962F1320601QXC
65342
UT04VS33PQXC
5962R1320601VXC
65342
UT04VS33PVXC
5962F1320601VXC
65342
UT04VS33PVXC
5962R1320602QXC
65342
UT04VS50PQXC
5962F1320602QXC
65342
UT04VS50PQXC
5962R1320602VXC
65342
UT04VS50PVXC
5962F1320602VXC
65342
UT04VS50PVXC
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
65342
Vendor name
and address
Aeroflex Colorado Springs, Inc.
4350 Centennial Blvd.
Colorado Springs, CO 80907-3486
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.