ECLSOIC8EVB Evaluation Board User's Manual for High Frequency SOIC 8 http://onsemi.com EVAL BOARD USER’S MANUAL INTRODUCTION ON Semiconductor has developed an evaluation board for the devices in 8−lead SOIC package. These evaluation boards are offered as a convenience for the customers interested in performing their own engineering assessment on the general performance of the 8−lead SOIC device samples. The board provides a high bandwidth 50 W controlled impedance environment. The pictures in Figure 1 show the top and bottom view of the evaluation board, which can be configured in several different ways, depending on device under test (See Table 1. Configuration List). This evaluation board manual contains: • Information on 8−lead SOIC Evaluation Board • Assembly Instructions • Appropriate Lab Setup • Bill of Materials This manual should be used in conjunction with the device data sheet, which contains full technical details on the device specifications and operation. Board Lay−Up The 8−lead SOIC evaluation board is implemented in four layers with split (dual) power supplies (Figure 2. Evaluation Board Lay−up). For standard ECL lab setup and test, a split (dual) power supply is essential to enable the 50 W internal impedance in the oscilloscope as a termination for ECL devices. The first layer or primary trace layer is 0.008″ thick Rogers RO4003 material, which is designed to have equal electrical length on all signal traces from the device under the test (DUT) to the sense output. The second layer is the 1.0 oz copper ground plane and a portion of the plane is the VEE power plane. The FR4 dielectric material is placed between second and third layer and between third and fourth layer. The third layer is also 1.0 oz copper ground plane and a portion of this layer is VCC power plane. The fourth layer is the secondary trace layer. Figure 1. Top and Bottom View of the 8−lead SOIC Evaluation Board © Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 2 1 Publication Order Number: EVBUM2056/D ECLSOIC8EVB LAY−UP DETAIL 4 LAYER SILKSCREEN (TOP SIDE) LAYER 1 (TOP SIDE) ROGERS 4003 0.008 in LAYER 2 (GROUND AND VEE PLANE P1) 1 OZ FR−4 0.020 in LAYER 3 (GROUND AND VCC PLANE P2) 1 OZ FR−4 0.025 in LAYER 4 (BOTTOM SIDE) 0.062 $ 0.007 Figure 2. Evaluation Board Lay−up Board Layout devices and the relevant configuration that utilizes this PCB board. List of components and simple schematics are located in Figures 4 through 14. Place SMA connectors on J1 through J7, 50 W chip resistors on R1 through R7, and chip capacitors C1 through C4 according to configuration figures. (C1 and C2 are 0.01 mF and C3 and C4 are 0.1 mF). The 8−lead SOIC evaluation board was designed to be versatile and accommodate several different configurations. The input, output, and power pin layout of the evaluation board is shown in Figure 3. The evaluation board has at least eleven possible configurable options. Table 1. list the Top View Bottom View Figure 3. Evaluation Board Layout http://onsemi.com 2 ECLSOIC8EVB Table 1. Configuration List ECLinPS PlusE ECLinPS LiteE Device Comments Configuration Device Comments Configuration MC10EL01D/MC100EL01D See Figure 4 1 MC10EP01D/MC100EP01D See Figure 4 1 MC10EL04D/MC100EL04D See Figure 5 2 MC10EP05D/MC100EP05D See Figure 4 1 MC10EL05D/MC100EL05D See Figure 4 1 MC10EP08D/MC100EP08D See Figure 4 1 See Figure 6 3 MC10EL07D/MC100EL07D See Figure 5 2 MC10EP11D/MC100EP11D MC10EL11D/MC100EL11D See Figure 6 3 See Figure 5 2 MC10EL12D/MC100EL12D See Figure 6 3 MC10EP16D/ MC100EP16D* MC10EL16D/MC100EL16D* See Figure 5 2 MC100EP16FD* See Figure 5 2 MC10EL31D/MC100EL31D See Figure 4 1 MC10EP16TD/ MC100EP16TD* See Figure 5 2 MC10EL32D/MC100EL32D See Figure 7 4 MC100EP16VAD* See Figure 5 2 MC10EL33D/MC100EL33D See Figure 7 4 MC100EP16VBD* See Figure 5 2 MC10EL35D/MC100EL35D See Figure 4 1 MC100EP16VCD* See Figure 8 5 MC10EL51D/MC100EL51D See Figure 4 1 MC100EP16VSD* See Figure 5 2 MC10EL52D/MC100EL52D See Figure 4 1 MC100EP16VTD* See Figure 5 2 MC10EL58D/MC100EL58D See Figure 8 5 MC10EP31D/MC100EP31D See Figure 4 1 MC10EL89D/MC100EL89D See Figure 6 3 MC10EP32D/MC100EP32D See Figure 7 4 MC10ELT20D/ MC100ELT20D See Figure 9 6 MC10EP33D/MC100EP33D See Figure 7 4 MC10ELT21D/ MC100ELT21D See Figure 10 7 MC10EP35D/MC100EP35D See Figure 4 1 MC10EP51D/MC100EP51D See Figure 4 1 MC10ELT22D/ MC100ELT22D See Figure 11 8 MC10EP52D/MC100EP52D See Figure 4 1 MC10EP58D/MC100EP58D See Figure 8 5 MC100ELT23D See Figure 12 9 MC100EP89D See Figure 6 3 MC10ELT26D/ MC100ELT26D See Figure 13 10 MC10EPT20D/ MC100EPT20D See Figure 9 6 MC10ELT28D/ MC100ELT28D See Figure 14 11 MC100EPT21D* See Figure 10 7 MC100EPT22D See Figure 11 8 MC100EPT23D* See Figure 12 9 MC100EPT26D* See Figure 13 10 Low Voltage ECLinPSE Device Comments Configuration MC100LVEL01D See Figure 4 1 MC100LVEL05D See Figure 4 1 MC100LVEL11D See Figure 6 3 MC100LVEL12D See Figure 6 3 MC100LVEL16D* See Figure 5 2 MC100LVEL31D See Figure 4 1 MC100LVEL32D See Figure 7 4 MC100LVEL33D See Figure 7 4 MC100LVEL51D See Figure 4 1 MC100LVEL58D See Figure 8 5 MC100LVELT22D See Figure 11 8 MC100LVELT23D See Figure 12 9 Low Voltage ECLinPS Plus Device Comments Configuration MC100LVEP11D See Figure 6 3 MC100LVEP16D* See Figure 5 2 *See Appendix for additions or modifications to the current configuration. ECLinPS MAXE Device Comments Configuration NB6L11D See Figure 6 3 NB6L16D See Figure 5 2 http://onsemi.com 3 ECLSOIC8EVB Evaluation Board Assembly Instructions The 8−lead SOIC evaluation board is designed for characterizing devices in a 50 W laboratory environment using high bandwidth equipment. Each signal trace on the board has a via, which has an option of termination resistor or bypassing capacitor depending on the input/output configuration (see Table 1. Configuration List). Table 17 contains the Bill of Materials for this evaluation board. On the top side of the evaluation board solder the four surface mount test point clips to the pads labeled VCC, VEE, and GND. The VCC clip connects directly to pin 8 of the device. The VEE clip connects directly to pin 5 of the device. There are two GND clip footprints which can be connected to the ground plane of the evaluation board depending on the setup configuration. It is recommended to solder 0.01 mF capacitors to C1 and C2 to reduce the unwanted noise from the power supplies. C3 and C4 pads are provided for 0.1 mF capacitor to further diminish the noise from the power supplies. Adding capacitors can improve edge rates, reduce overshoot and undershoot. Solder the Device on the Evaluation Board The soldering can be accomplished by hand soldering or soldering re−flow techniques. Make sure pin 1 of the device is located next the white dotted mark U1 and all the pins are aligned to the footprint pads. Solder the 8−lead SOIC device to the evaluation board. Termination All ECL outputs need to be terminated to VTT (VTT = VCC –2.0 V = GND) via a 50 W resistor in a split power supply lab set−up. 0603 chip resistor pads are provided on the bottom side of the evaluation board to terminate the ECL driver (More information on termination is provided in AN8020). Solder the chip resistors to the bottom side of the board on the appropriate input of the device pins labeled R1, R2, R3, R4, R6, and R7, depending on the specific device. Connecting Power and Ground Planes For standard ECL lab setup and test, a split (dual) power supply is required enabling the 50 W internal impedance in the oscilloscope to be used as a termination of the ECL signals (VTT = VCC – 2.0 V, in split power supply setup, VTT is the system ground, VCC is 2.0 V, and VEE is –3.0 V or –1.3 V; see Table 2: Power Supply Levels). Installing the SMA Connectors Table 2. Power Supply Levels Power Supply VCC VEE GND 5.0 V 2.0 V −3.0 V 0.0 V 3.3 V 2.0 V −1.3 V 0.0 V 2.5 V 2.0 V −0.5 V 0.0 V Each configuration indicates the number of SMA connectors needed to populate an evaluation board for a given configuration. Each input and output requires one SMA connector. Attach all the required SMA connectors onto the board and solder the connectors to the board. Please note that alignment of the signal connector pin of the SMA can influence the lab results. The reflection and launch of the signals are largely influenced by imperfect alignment and soldering of the SMA connector. The power supply for voltage level translating device need slight modification as indicated in Table 3. Power Supply Levels for Translators. Validating the Assembled Board Table 3. Power Supply Levels for Translators PECL Translators VCC VEE GND 3.3 V / 5.0 V 0.0 V 0.0 V After assembling the evaluation board, it is recommended to perform continuity checks on all soldered areas before commencing with the evaluation process. Time Domain Reflectometry (TDR) is another highly recommended validation test. http://onsemi.com 4 ECLSOIC8EVB CONFIGURATIONS VCC GND C4 0.1 mF R1 50 W J1 C1 0.01 mF R2 50 W J2 DUT J5 R3 50 W J3 C2 0.01 mF R4 50 W J4 J6 C3 0.1 mF VEE GND Figure 4. Configuration 1 Schematic Table 4. Configuration 1 Pin 1 Device Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes No Yes No Yes Yes MC10EL01D/MC100EL01D MC10EL05D/MC100EL05D MC10EL31D/MC100EL31D MC10EL35D/MC100EL35D MC10EL51D/MC100EL51D MC10EL52D/MC100EL52D MC100LVEL01D MC100LVEL05D MC100LVEL31D MC100LVEL51D MC10EP01D/MC100EP01D MC10EP05D/MC100EP05D MC10EP08D/MC100EP08D MC10EP31D/MC100EP31D MC10EP35D/MC100EP35D MC10EP51D/MC100EP51D MC10EP52D/MC100EP52D http://onsemi.com 5 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 Pin 8 C1 0.01 mF J2 DUT Pin 3 R3 50 W J3 Pin 7 Pin 2 R2 50 W J7 Pin 6 C2 0.01 mF Pin 4 J6 Pin 5 C3 0.1 mF J4 (Optional) VEE GND Figure 5. Configuration 2 Schematic Table 5. Configuration 2 Pin 1 Device Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 No No Yes Yes Yes Yes No No Yes Yes Yes No Yes No Yes Yes MC10EL04D/MC100EL04D MC10EL07D/MC100EL07D MC10EL16D/MC100EL16D* MC100LVEL16D* MC10EP16D/MC100EP16D* MC100EP16FD* MC100LVEP160* MC10EP16TD/MC100EP16TD* MC100EP16VAD* MC100EP16VBD* MC100EP16VSD* MC100EP16VTD* NB6L160D *See Appendix for additional or modification to the current configuration http://onsemi.com 6 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 Pin 8 C1 0.01 mF J1 Pin 7 Pin 2 R7 50 W DUT J2 Pin 3 J7 Pin 6 R6 50 W C2 0.01 mF J3 Pin 4 J6 Pin 5 C3 0.1 mF J4 VEE GND Figure 6. Configuration 3 Schematic Table 6. Configuration 3 Pin 1 Device Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 Yes No Yes No Yes No Yes No Yes Yes Yes Yes Yes Yes Yes Yes MC10EL11D/MC100EL11D MC10EL12D/MC100EL12D MC10EL89D/MC100EL89D MC100LVEL11D MC100LVEL12D MC10EP11D/MC100EP11D MC100EP89D MC100LVEP11D NB6L11D http://onsemi.com 7 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 R1 50 W Pin 8 C1 0.01 mF J1 DUT J2 Pin 3 R3 50 W J3 Pin 7 Pin 2 R2 50 W J7 Pin 6 Pin 4 C2 0.01 mF Pin 5 J6 C3 0.1 mF J4 (Optional) VEE GND Figure 7. Configuration 4 Schematic Table 7. Configuration 4 Pin 1 Device Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 Yes Yes Yes Yes Yes Yes No No Yes Yes Yes No Yes No Yes Yes MC10EL32D/MC100EL32D MC10EL33D/MC100EL33D MC100LVEL32D MC100LVEL33D MC10EP32D/MC100EP32D MC10EP33D/MC100EP33D http://onsemi.com 8 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 R2 50 W Pin 8 Pin 7 DUT Pin 2 J2 R3 50 W J3 C1 0.01 mF Pin 3 Pin 6 Pin 4 Pin 5 J7 C2 0.01 mF R4 50 W J6 C3 0.1 mF J4 (Optional) VEE GND Figure 8. Configuration 5 Schematic Table 8. Configuration 5 Pin 1 Device Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 No No Yes Yes Yes Yes Yes Yes Yes Yes Yes No Yes No Yes Yes MC100EP16VCD* MC10EL58D/MC100EL58D MC100LVEL58D MC10EP58D/MC100EP58D *See Appendix for addition or modification to the current configuration http://onsemi.com 9 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 Pin 8 C1 0.01 mF Pin 7 Pin 2 R7 50 W (optional) J7 DUT J2 Pin 3 Pin 6 Pin 4 Pin 5 J3 Short VEE GND Figure 9. Configuration 6 − Translator Schematic Table 9. Configuration 6 Pin 1 Device MC10ELT20D/MC100EL20D MC10EPT20D/MC100EPT20D Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 No No Yes No Yes No No No No No No No Yes Optional Yes Yes http://onsemi.com 10 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 C1 0.01 mF Pin 7 Pin 2 R2 50 W DUT J2 R3 50 W J3 Pin 8 J7 Pin 3 Pin 6 Pin 4 Pin 5 Short VEE GND Figure 10. Configuration 7 − Translator Schematic (Unloaded Testing Condition) Table 10. Configuration 7 Pin 1 Device MC10ELT21D/MC100EL21D MC100EPT21D Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 No No Yes Yes Yes Yes No No No No No No Yes No Yes Yes *See Appendix for loaded testing condition. http://onsemi.com 11 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 Pin 8 C1 0.01 mF J1 Pin 7 Pin 2 R7 50 W (optional) J7 DUT J2 Pin 3 Pin 6 Pin 4 Pin 5 R6 50 W (optional) J6 J3 Short J4 VEE GND Figure 11. Configuration 8 − Translator Schematic Table 11. Configuration 8 Pin 1 Device Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J57 R7 C1 C4 Yes No Yes No Yes No Yes No No No Yes Optional Yes Optional Yes Yes MC10ELT22D/ MC100EL22D MC100LVELT22D MC100EPT22D http://onsemi.com 12 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 R1 50 W Pin 8 C1 0.01 mF J1 DUT J2 Pin 3 R3 50 W J3 Pin 7 Pin 2 R2 50 W J7 Pin 6 J6 Pin 4 R4 50 W J4 Pin 5 Short VEE GND Figure 12. Configuration 9 − Translator Schematic (Unloaded Testing Condition) Table 12. Configuration 9 Pin 1 Device Pin 2 Pin 3 J1 R1 J2 R2 J3 Yes Yes Yes Yes Yes R3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 Yes Yes No No Yes No Yes No Yes Yes MC100EL23D MC100LVELT23D Yes MC100EPT23D *See Appendix for loaded testing condition. http://onsemi.com 13 ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 Pin 8 Pin 7 Pin 2 R2 50 W C1 0.01 mF DUT J2 Pin 3 R3 50 W J7 Pin 6 J3 J6 Pin 4 Pin 5 Short VEE GND Figure 13. Configuration 10 − Translator Schematic (Unloaded Testing Condition) Table 13. Configuration 10 Pin 1 Device MC10ELT26D/MC100ELT26D MC100EPT26D Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 No No Yes Yes Yes Yes No No No No Yes Yes *See Appendix for loaded testing condition. http://onsemi.com 14 Pin 7 J7 Yes R7 No Pin 8 C1 C4 Yes Yes ECLSOIC8EVB VCC GND C4 0.1 mF Pin 1 R1 50 W J2 Pin 8 Pin 7 Pin 2 R2 50 W C1 0.01 mF DUT J2 Pin 3 J7 R6 50 W (optional) Pin 6 J3 Pin 4 Pin 5 J6 Short J3 VEE GND Figure 14. Configuration 11 − Translator Schematic Table 14. Configuration 11 Pin 1 Device MC10ELT28D/MC100ELT28D Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 J1 R1 J2 R2 J3 R3 J4 R4 C2 C3 J6 R6 J7 R7 C1 C4 Yes Yes Yes Yes Yes No Yes No No No Yes Optional Yes No Yes Yes http://onsemi.com 15 ECLSOIC8EVB LAB SETUP Power Supply VCC OUT1 J2 GND J1 Test Measuring Equipment J7 Channel 1 OUT1 Differential Signal Generator DUT Channel 2 OUT2 J3 J6 J4 OUT2 TRIGGER TRIGGER VEE GND Power Supply Figure 15. Example of Standard Lab Setup (Configuration 1) 1. Connect appropriate power supplies to VCC, VEE, and GND. For standard ECL lab setup and test, a split (dual) power supply is required enabling the 50 W internal impedance in the oscilloscope to be used as a termination of the ECL signals (VTT = VCC – 2.0 V, in split power supply setup, VTT is the system ground, VCC is 2.0 V, and VEE is –3.0 V or –1.3 V; see Table 15). The power supply for voltage level translating device need slight modification as indicated in Table 16. Table 16. Power Supply Levels for Translators PECL Translators VCC VEE GND 5.0 V 2.0 V −3.0 V 0.0 V 3.3 V 2.0 V −1.3 V 0.0 V 2.5 V 2.0 V −0.5 V 0.0 V VEE GND 0.0 V 0.0 V 2. Connect a signal generator to the input SMA connectors. Setup input signal according to the device data sheet. 3. Connect a test measurement device on the device output SMA connectors. Table 15. Power Supply Levels Power Supply VCC 3.3 V / 5.0 V NOTE: The test measurement device must contain 50 W termination. http://onsemi.com 16 ECLSOIC8EVB Table 17. Bill of Materials Components SMA Connector Surface Mount Test Points Chip Capacitor Chip Resistor Manufacturer Description Part Number Web Site Rosenberger SMA Connector, Side Launch, Gold Plated 32K243−40ME3 http://www.rosenberger.de http://www.rosenbergerna.com Johnson Components* SMA Connector, Side Launch, Gold Plated 142−0701−851 http://www.johnsoncomponents.com Keystone* AVC Corporation* Vishay Dale* SMT Miniature Test Point 5015 SMT Compact Test Point 5016 http://www.keyelco.com Thru−Hole Mount Compact Test Point 5005−5009 0603 0.01 mF ±10% 06035C103KAT2A 0603 0.1 mF ±10% 06035C104KAT2A 0603 50 W ± 1% Thick Film Resistor CRCW060351R1J http://www.vishay.com http://www.avxcorp.com Evaluation Board ON Semiconductor SOIC 8 Evaluation Board ECLSOIC8EVB http://www.onsemi.com Device Samples ON Semiconductor SOIC 8 Package Device Various http://www.onsemi.com *Components are available through most distributors, i.e. www.newark.com, www.digikey.com http://onsemi.com 17 ECLSOIC8EVB Appendix A (Modified Configurations) MC100EP16VSD This device has an option of varying the output swing amplitude and being driven single−endedly. In order to utilize these options, Configuration 2 needs to be modified. Output Swing Control 1. Connect a SMA connector on J1 2. Add a decoupling capacitor between J1 and VCC (0.01 mF) Drive Single−Endedly 1. Remove the 50 W chip resistor from R3. 2. Short pin 3 and pin 4 together. Option A) Short R3 and R4. Or Option B) Place a SMA connector on J4 and use a cable with SMA connectors to short J3 and J4 connectors. MC10EL16D/MC100EL16D MC100LVEL16D MC10EP16D/MC100EP16D MC10EP16DF/MC100EP16DF MC100EP16VAD MC100LVEP16D The devices listed above have the option of being driven single−endedly by using the provided VBB pin of the device. In order to drive it single−endedly, Configuration 2 needs to be modified. 1. Remove the 50 W chip resistor from R3. 2. Short pin 3 and pin 4 together. Option A) Short R3 and R4 trace pads. Or Option B) Place a SMA connector on J4 and use a cable with SMA connectors to short J3 and J4 connectors. MC100EP16VTD This device has an option of varying the output swing amplitude and internal termination. In order to utilize these options, Configuration 2 needs to be modified. Output Swing Control 1. Connect a SMA connector on J1 2. Add a decoupling capacitor between J1 and VCC (0.0 1 mF) Internal Termination 1. Remove the 50 W chip resistors from R2 and R3. 2. Short R1 and R4 to VTT (GND) Option A) Short R1 and R4 to VTT (GND). Or Option B) Place SMA connectors on J1 and J4. Place shorting barrels on J1 and J4 SMA connector. MC10EP16D/MC100EP16DT This device has an option of being 50 W terminated internally. To evaluate the internal 50 W resistor of the device, Configuration 2 needs to be modified. 1. Remove the 50 W chip resistors from R2 and R3. 2. Short R1 and R4 to VTT (GND). Option A) Short R1 and R4 to VTT (GND). Or Option B) Place SMA connectors on J1 and J4. Place shorting barrels on J1 and J4 SMA connector. MC100EP16VBD This device has an option of single−ended feedback output and being driven single−endedly using the VBB. To utilize the feedback option and drive it single−endedly, Configuration 2 needs to be modified. Feedback option 1. Connect a SMA connector on J1 Drive single−endedly 2. Remove the 50 W chip resistor from R3. 3. Short pin 3 and pin 4 together. Option A) Short R3 and R4. Or Option B) Place a SMA connector on J4 and use a cable with SMA connectors to short J3 and J4 connectors. MC10ELT21D/MC100EL21D MC100EL23D MC10ELT26D/MC100ELT26D MC100EPT21D MC100EPT23D MC100EPT26D MC100LVELT23 The TTL output data presented in the data sheet are obtained under 500 W load resistor in parallel with 20 pF fixture capacitance. In order to obtain comparable data as in the data sheet, the evaluation board needs to be modified. 1. Cut the output trace so that the 0402* size chip resistor can be placed over the cut out trace. 2. Solder a 450 W chip resistor across the cut out trace. MC100EP16VCD This device has an option of single−ended feedback output with an enable pin. To utilize the feedback option and enable option, Configuration 5 needs to be modified. 1. Connect a SMA connector on J1. 2. Remove the 50 W chip resistor from R3. *Any size chip resistor can be used. The recommended size of the chip resistor is 0402, to reduce the effect of parasitic with a 17 mil trace width. 450 W in series with 50 W instrument resistance add up to 500 W loaded condition. http://onsemi.com 18 ECLSOIC8EVB Appendix B (Gerber Files) Top Layer Third Layer (VCC and Ground Plane) Second Layer (VEE and Ground Plane Figure 16. Gerber Files http://onsemi.com 19 Bottom Layer ECLSOIC8EVB ECLinPS, ECLinPS Lite, ECLinPS Plus, and ECLinPS MAX are trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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