V60170G-M3 Datasheet

V60170G-M3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
3
TYPICAL APPLICATIONS
1
V60170G
PIN 1
PIN 2
PIN 3
CASE
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
170 V
IFSM
210 A
VF at IF = 30 A
0.72 V
TJ max.
175 °C
Package
TO-220AB
Diode variation
Dual common cathode
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
SYMBOL
V60170G
UNIT
VRRM
170
V
60
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IF(AV)
A
30
IFSM
210
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +175
°C
Revision: 04-Dec-13
Document Number: 89943
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V60170G-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 15 A
TA = 25 °C
IF = 30 A
Instantaneous forward voltage per diode
VF (1)
IF = 5 A
IF = 15 A
TA = 125 °C
Reverse current per diode
VR = 170 V
MAX.
0.65
-
0.78
-
0.87
1.02
0.50
-
UNIT
V
0.62
-
0.72
0.80
TA = 25 °C
1.5
-
μA
TA = 125 °C
2.5
-
mA
-
450
μA
5
50
mA
IF = 30 A
VR = 136 V
TYP.
IR (2)
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  20 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60170G
UNIT
1.0
per diode
Typical thermal resistance
°C/W
RJC
per device
0.7
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.89
4W
50/tube
Tube
V60170G-M3/4W
40
30.0
D = 0.5
35
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
30
25
20
15
10
5
0
D = 0.8
D = 0.3
25.0
D = 0.2
D = 1.0
D = 0.1
20.0
15.0
T
10.0
5.0
D = tp/T
tp
25
30
0.0
0
25
50
75
100
125
150
175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
0
5
10
15
20
35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 04-Dec-13
Document Number: 89943
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V60170G-M3
www.vishay.com
Vishay General Semiconductor
10 000
TA = 175 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Instantaneous Forward Voltage (V)
TA = 175 °C
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.0001
20
40
60
80
100
10
Junction to Case
1
0.1
0.01
Percent of Rated Peak Reverse Voltage (%)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 04-Dec-13
Document Number: 89943
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000