PW350 InGaP HBT Gain Block Features Functional Diagram Applications DC - 3000MHz Broadband Gain Block 16.7 dB Gain at 0.9GHz Mobile Infrastructure +17.6 dBm P1dB Cellular, PCS, GSM, GPRS, +33.5 dBm Output IP3 WCDMA, WiBro Single Voltage Supply W-LAN / DMB Lead-free / Green / RoHS- CATV / DBS compliant SOT-89 Package RFID / Fixed Wireless 4 3 2 1 Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 Description The PW350 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The amplifier features high linear performance, wideband operation, and high reliability. The PW350 operates from a single voltage supply and requires only two DC-blocking capacitors, a bias resistor and an inductor for operation. The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable plastic SOT-89 packages. Specifications Symbol S21 S11 Parameters Gain Input Return Loss S22 Output Return Loss P1dB Output Power @1dB compression OIP3 Output Third Order intercept Units Freq. Min. Typ. dB 75 MHz 900 MHz 1900 MHz 2300 MHz 16.9 16.7 16.4 15.9 dB 75 MHz 900 MHz 1900 MHz 2300 MHz -18 -18 -30 -25 dB 75 MHz 900 MHz 1900 MHz 2300 MHz -12 -16 -10 -9 dBm 75 MHz 900 MHz 1900 MHz 2300 MHz 18.5 17.6 16.5 15.7 dBm 75 MHz 900 MHz 1900 MHz 2300 MHz 33.5 33.5 30.5 29 75 MHz 900 MHz 1900 MHz 2300 MHz 3.2 3.3 3.5 3.6 NF Noise Figure dB V/I Device voltage / current V/mA 4.84/58 Rth Thermal Resistance °C/W 113 Tj Junction Temperature °C 120 Max. Test Conditions : T=25°C, Supply Voltage=+6V, Rbias=20ohm, 50ohm System, OIP3 measured with two tones at an output power of +3dBm/tone separated by 1MHz. http://www.prewell.com 1 December 2006 PW350 InGaP HBT Gain Block Typical RF Performance for 1.9GHz Tuned Application Circuit Supply Bias Voltage = 6V, R(bias)= 20 ohm, Current= 58mA Frequency MHz 500 900 1500 1900 2300 3000 S21 dB 16.4 16.7 16.6 16.4 15.9 14.5 S11 dB -12 -18 -26 -34 -26 -22 S22 dB -10 -17 -14 -11 -9 -8 P1dB dBm 15.8 17.6 17.1 16.5 15.9 13.3 OIP3 dBm 32.6 33.5 31.8 30.8 29.4 27.1 Noise Figure dB 3.4 3.3 3.4 3.5 3.6 3.7 Input Return Loss 20 -10 -5 15 -20 -10 10 S22(dB) 0 -30 +25 C o -40 C o +85 C 5 0.5 1.0 1.5 2.0 2.5 +25 C o -40 C o +85 C -40 -50 0.0 3.0 0.5 1.0 Output IP3 vs. Frequency 35 20 30 o +25 C o -40 C o +85 C 1.5 2.0 -25 0.0 3.0 0.5 2.5 1.5 2.0 2.5 3.0 2.5 3.0 Frequency(GHz) NF vs. Frequency 6 15 4 3 o +25 C o -40 C o +85 C 5 0.5 3.0 1.0 5 1.0 Frequency(GHz) 2 o +25 C 1.5 2.0 2.5 1 0.0 3.0 0.5 1.0 1.5 2.0 Frequency(GHz) Frequency(GHz) Output power/Gain vs. Input Power @1.9GHz Output power/Gain vs. Input Power @0.9GHz 20 20 15 10 5 0 -20 2.5 P1dB vs. Frequency 10 Output Power(dBm)/Gain(dB) 1.0 2.0 NF(dB) 25 P1dB(dBm) 40 20 0.5 1.5 Frequency(GHz) Frequency(GHz) 25 o +25 C o +85 C o -40 C -20 Output Power(dBm)/Gain(dB) 0 0.0 -15 o o OIP3(dBm) Output Return Loss 0 S11(dB) Gain(dB) Gain vs. Frequency 25 Gain Output Power -15 -10 -5 0 15 10 5 0 -20 5 Gain Output Power -15 -10 -5 0 5 Input Power(dBm) Input Power(dBm) http://www.prewell.com 2 December 2006 PW350 InGaP HBT Gain Block Recommended Bias Values 1.9GHz Tuned Application Circuit Supply Voltage Supply Voltage R bias Value Size 5.3 V 8.2 Ω 0805 6V 20 Ω 0805 7V 39 Ω 1210 8V 56 Ω 1210 9V 75 Ω 2010 10 V 91 Ω 2010 12 V 125 Ω 2512 R Bias 1uF 56pF 22nH RF IN RF OUT 56pF 56pF Typical RF Performance for 50 - 500MHz Tuned Application Circuit Supply Bias Voltage = 6V, R(bias)= 20 ohm, Current=57mA Frequency MHz 75 125 300 500 S21 : Gain dB 16.9 16.8 16.7 16.6 S11 : Input Return Loss dB -19 -19 -18 -17 S22 : Output Return Loss dB -13 -14 -14 -13 Output P1dB dBm 18.5 18.3 18.2 18.0 Output IP3 @3dBm dBm 33.5 33.5 33.2 32.3 Noise Figure dB 3.2 3.2 3.2 3.3 Gain vs. Frequency Supply Voltage 1uF 20 Gain(dB) R Bias 25 820nH RF IN 15 o 10nF RF OUT +25 C o -40 C o +85 C 10 5 10nF 100 10nF 200 300 400 500 600 Frequency(MHz) Input Return Loss Output Return Loss 0 0 -5 o +25 C o +85 C o -40 C S11(dB) S22(dB) -10 -10 -20 o -15 +25 C o -40 C o +85 C -20 -30 100 200 300 400 500 100 600 200 300 400 500 600 Frequency(MHz) Frequency(MHz) http://www.prewell.com 3 December 2006 PW350 InGaP HBT Gain Block Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +8 V Supply Current 200 mA RF Power Input 10 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-89 Package Outline ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 2(Passes at 2000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Evaluation Board Layout (4x4) Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. http://www.prewell.com 4 December 2006