MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 46nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 1.10 Ω (Typ.) @VGS=10V • 100% Avalanche Tested • RoHS compliant package Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 10 A Drain Current -Continuous (TC=100°C) 6.5 A IDM Drain Current Pulsed 40 A EAS Single Pulsed Avalanche Energy 960 mJ EAR Repetitive Avalanche Energy 24 mJ IAR Avalanche Current 9.2 A dv/dt Peak Diode Recovery dv/dt 4.0 V/ns Total Power Dissipation(@TC = 25 °C) 44 W 60 W 0.48 W/°C ID PD Derating Factor above 25 °C Publication Order Number: [MS10N80] © Bruckewell Technology Corporation Rev. A -2014 MS10N80 800V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TJ,TSTG TL Operating and Storage Temperature Range Value Unit -55 to +150 °C 300 °C Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds • Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Min. Typ. Max. RθJC Junction-to-Case -- -- 1.43 RθJA Junction-to-Ambient -- -- 62.5 Units °C/W On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units VGS Gate Threshold Voltage VDS = VGS,ID = 250μA 3.0 -- 5.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V,ID = 5.0 A -- 1.7 2.1 Ω Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS Breakdown Voltage /△TJ Temperature Coefficient IDSS IGSSF IGSSR Test Conditions Min Typ. Max. Units VGS = 0 V , ID = 250μA 800 -- -- V -- 1.0 -- V/°C -- -- 10 μA VGS = 30 V , VDS = 0 V -- -- 100 nA VGS = -30 V , VDS = 0 V -- -- -100 nA Min Typ. Max. Units -- 2200 -- pF -- 190 -- pF ID = 250μA, Referenced to 25°C Zero Gate Voltage Drain VDS = 800 V , VGS = 0 V Current VDS = 640 V , TC = 125°C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Symbol Parameter CISS Test Conditions Input Capacitance VDS = 25 V, VGS = 0 V, 100 COSS Output Capacitance CRSS Reverse Transfer Capacitance -- 20 -- pF td(on) Turn-On Time -- 60 -- ns tr Turn-On Time VDS = 400 V, ID = 7 A, -- 150 -- ns td(off) Turn-Off Delay Time RG = 25 Ω -- 110 -- ns tf Turn-Off Fall Time -- 90 -- ns Publication Order Number: [MS10N80] f=1.0MHz © Bruckewell Technology Corporation Rev. A -2014 MS10N80 800V N-Channel MOSFET Dynamic Characteristics Symbol Parameter Qg Test Conditions Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 640 V,ID = 10 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 46 -- nC -- 15 -- nC -- 20 -- nC Min Typ. Max. Units IS Continuous Source-Drain Diode Forward Current -- -- 10 ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 40 VSD Source-Drain Diode Forward Voltage IS = 7 A , VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time IS = 7 A , VGS = 0 V -- 730 -- ns Qrr Reverse Recovery Charge diF/dt=100A/μs -- 12 -- μC A Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=18mH, IAS=10A, VDD=5V, RG=25Ω, Starting TJ=25℃ 3. ISD≦7A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MS10N80] © Bruckewell Technology Corporation Rev. A -2014 MS10N80 800V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MS10N80] © Bruckewell Technology Corporation Rev. A -2014 MS10N80 800V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MS10N80] © Bruckewell Technology Corporation Rev. A -2014 MS10N80 800V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. 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Publication Order Number: [MS10N80] © Bruckewell Technology Corporation Rev. A -2014