MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • 100% EAS Test • Extended Safe Operating Area • RoHS compliant package Application • Electronic lamp ballasts • based on half bridge topology • PFC (Power Factor Correction) • SMPS (Switched Mode Power Supplies) Graphic symbol Packing & Order Information 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 13 A Drain Current -Continuous (TC=100°C) 8 A IDM Drain Current –Pulsed 52 A EAS Avalanche Energy 803 mJ EAR Repetitive Avalanche Energy 19.5 mJ Power Dissipation (TC=25°C) 195 W Power Dissipation (TC=100°C) 1.56 W/°C ID PD Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TJ/TSTG Operating Junction and Storage Temperature Value Unit -55 to +175 °C Note: 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% Thermal Resistance Characteristics Symbol Parameter Rthjc Typ. Max. -- 0.64 -- 62.5 Units Typical thermal resistance RθJA Static Characteristics Symbol Test Conditions BVDSS VGS = 0 V , ID = 250μA △BVDSS /△TJ ID = 250μA, Referenced to 25°C VGS VDS = VGS, ID = 250μA GFS VDS = 40 V, ID = 6.5A IDSS VDS = 500 V , VGS = 0 V VDS = 400 V , VGS = 0 V , Tj= 125°C °C/W Min Typ. Max. Units 500 -- -- V -- 0.50 -- V/°C 4.0 V 15 S 2.0 -- -- 1 10 uA IGSS VGS = ±30 -- -- ±100 nA *RDS(ON) VGS = -10 V , ID = 6.5 A -- 3.8 4.8 Ω Min Typ. Max. Units -- 43 56 nC -- 7.5 10 nC Qgd -- 18.5 24 nC td(on) -- 25 57.5 ns Dynamic Characteristics Symbol Test Conditions Qg Qgs VDS = 400 V,ID = 13 A, VGS = 10 V tr VDS = 250 V, ID = 13 A, -- 100 220 ns td(off) RG = 25 Ω -- 130 273 ns -- 100 220 ns -- 1580 2054 pF -- 180 234 pF -- 20 28 pF tf CISS COSS VDS = 25 V, VGS = 0 V, f = 1.0MHz CRSS Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET Source-Drain Diode Characteristics Symbol Test Conditions Min Typ. Max. IS -- -- 13 ISM -- -- 52 -- -- 1.4 V -- 410 -- ns -- 4.5 -- uC VSD trr Qrr Units A IF = IS, VGS = 0 IF = IS, dIF/dt=100A/μs Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L=9.5mH,IAS=13A,VDD=50V,RG=25Ω,Starting TJ=25°˚C 3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET ■Characteristics Test Circuit & Waveform FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014