VBT3045BP-E3 Datasheet

VBT3045BP-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
• TJ = 200 °C max. in solar bypass application
1
PIN 1
PIN 2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
K
HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
30 A
MECHANICAL DATA
VRRM
45 V
IFSM
200 A
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IF(DC)
VF at IF = 40 A
0.51 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current)
200 °C
Package
TO-263AB
Diode variation
Single die
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
SYMBOL
VBT3045BP
UNIT
VRRM
45
V
30
A
IF(DC)
(1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Operating junction temperature range (AC mode)
TOP
-40 to +150
°C
Junction temperature in DC forward current
without reverse bias, t  1 h
TJ (2)
200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
Revision: 09-Sep-13
Document Number: 89449
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT3045BP-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 15 A
TA = 25 °C
IF = 30 A
Instantaneous forward voltage
VF (1)
IF = 5 A
IF = 15 A
TA = 125 °C
IF = 30 A
TA = 25 °C
VR = 45 V
Reverse current
IR (2)
TA = 125 °C
TYP.
MAX.
0.42
-
0.49
-
0.58
0.70
0.30
-
UNIT
V
0.40
-
0.51
0.60
-
2000
μA
19
60
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VBT3045BP
UNIT
RJC
1.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VBT3045BP-E3/4W
PREFERRED P/N
1.37
4W
50/tube
Tube
TO-263AB
VBT3045BP-E3/8W
1.37
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
Instantaneous Forward Current (A)
100
DC Forward Current (A)
30
25
20
15
10
DC Forward Current at
Thermal Equilibrium
5
0
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
25
50
75
100
125
150
175
200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 09-Sep-13
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Document Number: 89449
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT3045BP-E3
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
www.vishay.com
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
20
40
60
80
10
1
0.1
100
0.01
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
Revision: 09-Sep-13
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 89449
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000