VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220AB BENEFITS Base common cathode 2 • • • • • DESCRIPTION 2 Common cathode Anode 1 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count VS-HFA30TA60CHN3 is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A per leg continuous current, the VS-HFA30TA60CHN3 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30TA60CHN3 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Anode 3 PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 15 A VR 600 V VF at IF 1.2 V trr typ. 19 ns TJ max. 150 °C Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF TC = 100 °C VALUES UNITS 600 V 15 30 Single pulse forward current IFSM 150 Maximum repetitive forward current IFRM 60 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 74 TC = 100 °C 29 -55 to +150 A W °C Revision: 15-Jul-15 Document Number: 94511 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 15 A Maximum forward voltage VFM IF = 30 A See fig. 1 IF = 15 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 - 1.2 1.6 UNITS V - 1.0 10 - 400 1000 - 25 50 pF - 8 - nH μA DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 and 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 19 - trr1 TJ = 25 °C - 42 60 trr2 TJ = 125 °C - 70 120 IRRM1 TJ = 25 °C - 4.0 6.0 - 6.5 10 - 80 180 - 220 600 IF = 15 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A IRRM2 TJ = 125 °C Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 250 - dI(rec)M/dt2 TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conducting Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s 1.7 RthJC - - 0.85 K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device Case style TO-220AB HFA30TA60CH Revision: 15-Jul-15 Document Number: 94511 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30TA60CHN3 Vishay Semiconductors 100 10 000 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 1.0 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 100 VFM - Forward Voltage Drop (V) 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 10 1 PDM 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 15-Jul-15 Document Number: 94511 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors 100 800 IF = 30 A IF = 15 A IF = 5.0 A 80 VR = 200 V TJ = 125 °C TJ = 25 °C 60 Qrr (nC) trr (ns) 600 40 200 0 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 25 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C 15 VR = 200 V TJ = 125 °C TJ = 25 °C dI(rec)M/dt (A/µs) 20 IRR (A) 400 VR = 200 V TJ = 125 °C TJ = 25 °C 20 IF = 30 A IF = 15 A IF = 5 A IF = 30 A IF = 15 A IF = 5 A 10 IF = 30 A IF = 15 A IF = 5 A 1000 5 0 100 100 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit Revision: 15-Jul-15 Document Number: 94511 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- HF A 30 TA 60 C H N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (30 = 30 A) 4 5 4 6 - Package: TA = TO-220AB Voltage rating (60 = 600 V) 7 - Circuit configuration: C = common cathode 8 - H = AEC-Q101 qualified 9 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free - ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA30TA60CHN3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95222 TO-220AB-N3 www.vishay.com/doc?95028 Revision: 15-Jul-15 Document Number: 94511 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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