VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt® FEATURES Base common cathode 2 D-PAK (TO-252AA) • 175 °C max. operating junction temperature • Output rectification freewheeling • Low forward voltage drop reduced Qrr and soft recovery 2 1 • Hyperfast recovery time Common Anode cathode 3 • Low leakage current Anode • AEC-Q101 qualified • Meets JESD 201 class 1A whisker test • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2x4A VR 200 V VF at IF 0.95 V trr (typ.) 23 ns TJ max. 175 °C Diode variation Common cathode DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 164 °C 8 Non-repetitive peak surge current per leg IFSM TJ = 25 °C 80 Operating junction and storage temperatures TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage per leg Reverse leakage current per leg SYMBOL VBR, VR VF IR TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 4 A - 0.87 0.95 IF = 8 A - 0.95 1.10 IF = 4 A, TJ = 150 °C - 0.71 0.80 IR = 100 μA IF = 8 A, TJ = 150 °C - 0.8 1.0 VR = VR rated - - 4 TJ = 125 °C, VR = VR rated - - 40 TJ = 150 °C, VR = VR rated - - 80 UNITS V μA Junction capacitance per leg CT VR = 200 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 02-Aug-12 Document Number: 94741 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 23 27 TJ = 25 °C - 20 - TJ = 125 °C - 27 - - 2 - - 3.4 - TJ = 25 °C - 20 - TJ = 125 °C - 46 - MIN. TYP. MAX. UNITS - 65 - 175 °C - 2.7 3.2 - 1.35 1.6 TJ = 25 °C TJ = 125 °C IF = 4 A dIF/dt = 200 A/μs VR = 160 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg per leg Thermal resistance, junction to case per device RthJC TEST CONDITIONS Approximate weight Marking device Revision: 02-Aug-12 Case style D-PAK °C/W 0.3 g 0.01 oz. 8CWH02FNH Document Number: 94741 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors 100 10 Reverse Current - I R (μA) Tj = 175°C Tj = 175°C 10 Tj = 150°C Tj = 125°C 1 Tj = 100°C 0.1 Tj = 75°C 0.01 Tj = 50°C Tj = 25°C 0.001 0.0001 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 1 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100 Tj = 125°C Tj = 25°C 0.1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 50 Forward Voltage Drop - VF (V) 100 150 200 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 10 D = 0.5 1 D = 02 D = 0.1 D = 0.05 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 02-Aug-12 Document Number: 94741 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors 180 35 175 30 170 25 trr ( nC ) Allowable Case Temperature (°C) 40 DC 165 Square wave (D=0.50) rated Vr applied 160 4A, Tj = 125°C 20 15 4A, Tj = 25°C 155 10 see note (1) 150 5 0 1 2 3 4 5 6 Average Forward Current - IF(AV)(A) 0 100 1000 di F /dt (A/μs ) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 70 60 RMS Limit 4 4A, Tj = 125°C 50 3 Qrr ( nC ) Average Power Loss ( Watts ) 5 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 2 1 40 30 4A, Tj = 25°C 20 DC 10 0 0 1 2 3 4 5 6 Average Forward Current - IF(AV)(A) 0 100 1000 di F /dt (A/μs ) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 02-Aug-12 Document Number: 94741 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 02-Aug-12 Document Number: 94741 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 C W H 02 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: C = Common cathode 4 - Package identifier: 5 - H = Hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - FN = TO-252AA 8 - None = Tube W = D-PAK TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - 10 - H = AEC-Q101 qualified Environmental digit: M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8CWH02FNHM3 VS-8CWH02FNTRHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube 2000 2000 13" diameter reel VS-8CWH02FNTRRHM3 3000 3000 13" diameter reel VS-8CWH02FNTRLHM3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 Revision: 02-Aug-12 Document Number: 94741 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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