MS9N20E

MS9N20E
Dual N-Channel 20-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• Low rDS(on) provides higher efficiency and extends
battery life
• Low thermal impedance copper leadframe
• DFN2X5 6PP saves board space
• Fast switching speed
• High performance trench technology
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS9N20E]
© Bruckewell Technology Corporation Rev. A -2014
MS9N20E
Dual N-Channel 20-V (D-S) MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
Continuous Drain Current (TA =25°C)
11.0
A
Continuous Drain Currenta (TA =70°C)
8.5
A
±40
A
a
ID
IDM
IS
PD
TJ/TSTG
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
3.1
A
a
3.5
W
a
1.8
W
-55 to +150
°C
Power Dissipation (TA =25°C)
Power Dissipation (TA =70°C)
Operating Junction and Storage Temperature
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Thermal Characteristics (Tc=25°C unless otherwise specified)
Parameter
Maximum
a
62.5
a
80
Maximum Junction-to-Ambient (t <= 10 sec)
Maximum Junction-to-Ambient (Steady-State)
Static Characteristics
Symbol
Test Conditions
Units
°C/W
Min
Typ.
Max.
Units
VGS
VDS = VGS, ID = -250μA
0.5
--
--
V
IGSS
VDS = 0 V , VGS = ±12 V
--
--
±100
nA
--
--
20
--
--
--
IDSS
VDS = 16 V , VGS = 0 V
VDS = 16 V , VGS = 0 V , TJ= 55°C
ID(on)
VDS = 5 V, VGS = 4.5 V
r
VDS = 4.5 V, ID = 6.7 A
DS(on)
VDS = 2.5 V, ID = 4.5 A
1
30
-22
28
uA
A
mΩ
gfs
VDS = 15 V, ID = 6 A
--
22
--
S
VSD
IS = 0.5 A , VGS = 0 V
--
0.7
--
V
Publication Order Number: [MS9N20E]
© Bruckewell Technology Corporation Rev. A -2014
MS9N20E
Dual N-Channel 20-V (D-S) MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
--
9.2
--
nC
--
1.9
--
nC
Qgd
--
2.8
--
nC
td(on)
--
1.7
--
ns
Qg
Qgs
VDS = 15 V , ID = 6.0 A,
VGS = 4.5 V
tr
VDD = 10 V , RL = 15 Ω,
--
2.3
--
ns
td(off)
VGEN = 4.5 V , ID = 1 A
--
1.1
--
ns
--
4.4
--
ns
tf
Notes:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Publication Order Number: [MS9N20E]
© Bruckewell Technology Corporation Rev. A -2014
MS9N20E
Dual N-Channel 20-V (D-S) MOSFET
■Characteristics Curve
FIG.1-OUTPUT CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON-RESISTANCE VS. DRAIN CURRENT
FIG.4-CAPACITANCE
FIG.5-GATE CHARGE
FIG.6-ON-RESISTANCE VS. JUNCTION TEMPERATURE
Publication Order Number: [MS9N20E]
© Bruckewell Technology Corporation Rev. A -2014
MS9N20E
Dual N-Channel 20-V (D-S) MOSFET
■Characteristics Curve
FIG.7-SOURCE-DRAIN DIODE
FORWARD VOLTAGE
FIG.8-ON-RESISTANCE VS.
GATE-TO-SOURCE VOLTAGE
FIG.9-VTH GATE TO SOURCE VOLTAGE VS
FIG.10-SINGLE PULSE POWER, JUNCTION-TO-AMBIENT
TEMPERATURE
FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT
Publication Order Number: [MS9N20E]
© Bruckewell Technology Corporation Rev. A -2014
MS9N20E
Dual N-Channel 20-V (D-S) MOSFET
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS9N20E]
© Bruckewell Technology Corporation Rev. A -2014