MSC49N60X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 40V,140A, RDS(ON) =2.8mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • Green Device Available • RoHS compliant package Applications • MB / VGA / Vcore • POL Applications • SMPS 2nd SR PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) (Chip Limitation) 100 A Drain Current - Continuous (TC=100°C) (Chip Limitation) 63 A 400 A 312 mJ ID IDM EAS Drain Current - Pulsed 1 2 Single Pulse Avalanche Energy Publication Order Number: [MSC49N60X] © Bruckewell Technology Corporation Rev. A -2016 MSC49N60X 40V N-Channel MOSFETs Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit 79 A Power Dissipation (TC=25°C) 135 W Power Dissipation - Derate above 25°C 1.08 W/°C TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C IAS PD Single Pulse Avalanched Current 2 Thermal Characteristics Symbol Parameter Typ. Max. RΘjA Thermal Resistance Junction to ambient -- 62 RθJC Thermal Resistance Junction to Case -- 0.92 Units °C/W Electrical Characteristics (TJ=25℃, unless otherwise noted) Off Characteristics Symbol Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA BVDSS Temperature Coefficient Reference to 25°C , ID=1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current BVDSS △BVDSS /△TJ On Characteristics Symbol Parameter Typ. Max. 40 V 0.03 V/°C ±100 VDS = 40 V , VGS = 0 V , TJ= 25°C 1 VDS = 32 V , VGS = 0 V , TJ= 125°C 10 Test Conditions Min Units Typ. Max. VGS = 10 V, ID = 25 A 2.2 2.8 VGS = 4.5 V , ID = 12 A 2.6 3.5 1.6 2.5 nA uA Units mΩ RDS(on) Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA △VGS(th) VGS(th) Temperature Coefficient VDS = VGS, ID =-250μA -5 mV/°C gfs Forward Tranconductance VDS = 10 V , ID = 2 A 45 S Dynamic and switching Characteristics Symbol Parameter td(on) Turn-On Delay Time tr Rise Time Turn-Off Delay Time tf Fall Time 3,4 3,4 Publication Order Number: [MSC49N60X] V Min Typ. Max. Units -- 28 50 ns ID = 1 A , RG = 6 Ω, -- 3.2 6.5 ns VGS = 10 V , VDD = 20 V -- 89 160 ns -- 14 28 ns 3,4 3,4 td(off) Test Conditions 1.2 © Bruckewell Technology Corporation Rev. A -2016 MSC49N60X 40V N-Channel MOSFETs Dynamic and switching Characteristics Symbol Parameter Qg Test Conditions 3,4 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge CISS Input Capacitance 3,4 3,4 COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Total Gate Charge VDS = 20 V , ID = 10 A, VGS = 4.5 V VDS = 25 V f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage VG = VD = 0 V , Force Current VGS = 0 V , IS = 1 A , TJ = 25°C Min Typ. Max. Units -- 44.4 80 nC -- 9.6 18 nC -- 16 30 nC -- 4940 7800 pF -- 425 800 pF -- 170 330 pF -- 1.4 2.8 Ω Min Typ. Max. Units -- -- 100 A -- -- 200 A -- -- 1 V Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=79A., Starting TJ=25℃ 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSC49N60X] © Bruckewell Technology Corporation Rev. A -2016 MSC49N60X 40V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSC49N60X] © Bruckewell Technology Corporation Rev. A -2016 MSC49N60X 40V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSC49N60X] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2016 MSC49N60X 40V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSC49N60X] © Bruckewell Technology Corporation Rev. A -2016