NCP5106BA36WGEVB NCP5106B 36W Ballast Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Introduction Detailed Operation This document describes how the NCP5106B driver can be implemented in a ballast application. The scope of this application note is to highlight the NCP5106B driver and not to explain or detailed how to build electronic ballast. The NCP5106B is a high voltage power MOSFET driver providing two outputs for direct drive of 2 N−channel power MOSFETs arranged in a half−bridge configuration with a cross conduction protection between the 2 channels. It uses the bootstrap technique to insure a proper drive of the High−side power switch. The driver works with 2 independent inputs to accommodate any topology (including half−bridge, asymmetrical half−bridge, active clamp and full−bridge). The lamp ballast is powered via a half bridge configuration. The 2 power MOSFETs are driven with the NCP5106B driver. The driver is supplied by the VCC rail, and the high side driver is supplied by the bootstrap diode: when the low side power MOSFET (Q2) is switched ON, the BRIDGE pin is pulled down to the ground, thus the capacitor connected between BRIDGE pin and VBOOT pin is refuelled via the diode D3 and the resistor R5 connected to VCC. When Q2 is switched OFF the bootstrap capacitor C6 supplies the high side driver with a voltage equal to VCC level minus the D3 forward voltage diode. Given the NCP5106B architecture, it is up to the designer to generate the right input signal polarity with the desired dead time. Nevertheless the NCP5106B provides a cross conduction protection with an internal fixed dead time. Thus in case of overlap on the inputs signal, the both outputs driver will be kept in low state, or a minimum of 100 ns dead time will be applied between the both drivers. The 555 timer generates only one signal for the driver, the second one, in opposite phase is built by inserting a NPN transistor (Q4) for inverting the signal. Afterwards the dead time is built with R2, D2 and C13 (typically 400 ns, see Figure 2). Evaluation Board Specification • Input range : 85 − 145 Vac or 184 − 265 Vac • Ballast Output power : 36 W (type PL−L 36W) ♦ ♦ ♦ Pre−Heating current : 295 mA Pre−heating time : 1 second Nominal current : 414 mA BEFORE PLUGGING IN THE DEMO BOARD, MAKE SURE THE JUMPER IS ON THE CORRECT POSITION: IF J2 IS USED, THEN Vin MUST BE LOWER THAN 145 Vac. Figure 1. Evaluation Board Photo © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 1 1 Publication Order Number: EVBUM2154/D NCP5106BA36WGEVB Dead time DRV_HI (5 V/div) 40 0 ns DRV_LO (5 V/div) Time (400 ns/div) Figure 2. Dead Time Between the High and Low Side Driver IN_HI (10 V/div) DRV_HI (10 V/div) IN_LO (10 V/div) DRV_LO (10 V/div) Time (4 ms/div) Figure 3. Input Output Timing Diagram Tube Voltage (100 V /div) Tube current (0.5 V/div) Tube Power (50 W/div) Tube average power = 32 W Figure 4. Tube Signals http://onsemi.com 2 http://onsemi.com C16 NC R10 33k Figure 5. Evaluation Board Schematic 5 2 4 R15 22k 5V1 D4 CVolt TRIG R U1 TLC555C F1 T500 mA GND C11 10nF GND Q3 BC547B R11 47k GND C10 220pF C9 220pF VCC CON2 1 2 8 VCC GND 3 4 DIS Q C17 100 uF R16 68k 27k R12 6 7 3 GND GND VCC R13 15k VCC GND C12 18pF GND Q4 BC547B C13 18pF R3 82k 2W GND 1N4148 D2 R2 110k C1 47 uF 400 V SerieM Panasonic C1 47 uF 400 V SerieM Panasonic C3 R1 220uF 22k GND D1 15V 1.3W VCC DF06 1 PT1 J2 US−jumper 3 THR GND 1 2 1 J1 2 4 3 2 1 1N4936 D5 U2 NCP5106B GND IN_LO IN_HI VCC D3 5 6 7 8 R5 10R GND D6 1N4936 C14 220pF/400V DRV_LO BRIDGE DRV_HI VBOOT 1N4936 C5 100nF GND C4 4.7uF GND GND R4 82k 2W GND R14 390k R9 10k R7 10R C6 R6 R8 100nF 10R 10k GND Q2 IRF840LC 1.4mH L1 Q1 IRF840LC 6.8nF 1kV C15 BALLAST B1 GND C8 220nF 400V C7 220nF 400V NCP5106BA36WGEVB NCP5106BA36WGEVB Figure 6. PCB Printout: Top and Bottom View http://onsemi.com 4 NCP5106BA36WGEVB BILL OF MATERIALS Manufacturer Manufacturer Part Number Substitution Allowed Lead Free Designator Qty Description Value Tolerance B1 2 Connector 2/” - rad5.08mm Weidmuller PM5.08/2/90 Yes Yes C1, C2 2 Electrolytic Capacitor 47 uF, 400 V 20% radial Panasonic ECA2GM470 Yes Yes C11 1 Capacitor 10 nF, 100 V 10% radial Murata RPER72A103K2M1B05A Yes Yes C12, C13 2 Capacitor 18 pF, 100 V 2% radial BC Comp. 2222-682-10189 Yes Yes C14 1 Capacitor 220 pF, 1000 V 10% radial Panasonic PICECKA3A221KBP Yes Yes C15 1 Capacitor 6.8 nF, 1600 V 5% radial BC Comp. 2222 375 30682 Yes Yes C16 1 Capacitor - - radial - - Yes Yes C17 1 Electrolytic Capacitor 100 uF, 16 V 20% radial Panasonic ECA1CM101 Yes Yes C3 1 Electrolytic Capacitor 220 uF, 16 V 20% radial BC Comp. 2222-13555221 Yes Yes C4 1 Electrolytic Capacitor 4.7 uF, 63 V 20% radial Nippon Chemi-Con SMEVB4.7UF63V Yes Yes C5, C6 2 Capacitor 100 nF, 50 V 10% radial Murata RPER71H104K2M1A05U Yes Yes Footprint C7, C8 2 Capacitor 220 nF, 400 V 10% radial Vishay MKT1822422405 Yes Yes C9, C10 2 Capacitor 220 pF, 100 V 5% radial Murata RPE5C2A221J2M1Z05A Yes Yes D1 1 Zener Diode 15 V, 1.3 W 5% axial Vishay BZX85C15 Yes Yes D2 1 High-Speed Diode 0.2 A, 75 V 0% axial Philips Semiconductor 1N4148 Yes Yes D3, D5, D6 3 Rectifier Diode 1 A, 400 V 0% axial ON Semiconductor 1N4936G Yes Yes D4 1 Zener Diode 5.1 V, 1.3 W 5% axial Vishay BZX85C5V1 Yes Yes F1 1 Fuse 500 mA, 250 V 0% radial Schurter 0034-6612 Yes Yes J1 1 Connector 2/” - rad5.08mm Weidmuller PM5.08/2/90 Yes Yes J2 1 Resistor 0 W, 0.25 W 0% axial Multicomp MCF0.25W0R Yes Yes L1 1 Inductor 1.4 mH - - Vogt 53-044 No Yes PT1 1 Diode Bridge 600 V, 1 A 0% dil General Semiconductor DF06M Yes Yes Q1, Q2 2 Power MOSFET N-Channel 8 A, 500 V - to220 International Rectifier INF840LC Yes Yes Q3, Q4 2 NPN Transistor 100 mA, 45 V - to92 ON Semiconductor BC547B Yes Yes R1, R15 1 Resistor 22 kW, 0.33 W 5% axial Neohm CFR25J22K Yes Yes R10 1 Resistor 33 kW, 0.33 W 5% axial Neohm CFR25J33K Yes Yes R11 1 Resistor 47 kW, 0.33 W 5% axial Neohm CFR25J45K Yes Yes R12 1 Resistor 27 kW, 0.33 W 5% axial Neohm CFR25J27K Yes Yes R13 1 Resistor 15 kW, 0.33 W 5% axial Neohm CFR25J15K Yes Yes R14 1 Resistor 390 kW, 0.33 W 5% axial Neohm CFR25J390K Yes Yes R16 1 Resistor 68 kW, 0.33 W 5% axial Neohm CFR25J68K Yes Yes R2 1 Resistor 120 kW, 0.33 W 5% axial Neohm CFR25J120K Yes Yes R3, R4 2 Resistor 82 kW, 3 W 5% axial BC Comp. 232219514823 Yes Yes R5, R6, R7 3 Resistor 10 W, 0.33 W 5% axial Neohm CFR25J10R Yes Yes R8, R9 2 Resistor 10 kW, 0.33 W 5% axial Neohm CFR25J10K Yes Yes U1 1 CMOS IC analog/timer - dip8 Texas Instruments TLC555CP No Yes U2 1 NCP5106B NCP5106B - dip8 ON Semiconductor NCP5106B No Yes http://onsemi.com 5 NCP5106BA36WGEVB TEST PROCEDURE FOR THE NCP5106B EVALUATION BOARD Vac A V V J2 jumper Figure 7. Test Setup Required Equipment to build a voltage doublers just after the bridge diode in case of US mains input voltage range. 2. Connect the test setup as shown above: • AC source • Voltmeter and Ampere meter on the load • Load on the output 3. Apply 230 Vac if European mains or 110 Vac for the US mains on the input connector. 4. Compare Iload and Vload with the following table according your input mains voltage. 5. If you get the correct output and input voltage, you can now connect a 36 W fluorescent tube on the output (see the ballast connection figure). • AC power source can be able to deliver 230 Vrms or • • • • 110 Vrms Two volt−meters Two ampere−meters 1 resistive load: 200 W / 50 W One NCP5106B Evaluation Board Test Procedure 1. First of all check if you need or not the jumper #2 (J2 on the board close the diode bridge). This jumper must be removed in case of European mains (230 Vac input voltage) and have to placed in case of US mains (110 Vac). This jumper is used TEST RESULTS: Input Mains J2 Vin (Vrms) Iin (Arms) Vload (Vrms) Iload (Arms) European Removed 230 V 278 mA 303 V 370 mA US Yes → max input voltage: 132 Vrms 100 V 514 mA 263 V 340 mA Input connection A Vac Rload 200 W A 36 W Tube V Output Connection Figure 8. Ballast Connection http://onsemi.com 6 NCP5106BA36WGEVB ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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