MS4N60 N-Channel Enhancement Mode Power MOSFET Description The MS4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Open Framed Power Supply • Adapter • STB Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain to Source Voltage 600 V VGS Gate to Source Voltage ±30 V Continuous Drain Current (TC=25°C) 4.5 Continuous Drain Current (TC=100°C) 2.6 IDM Drain Current Pulsed 18 A EAS Single Pulsed Avalanche Energy 210 mJ EAR Repetitive Avalanche Energy 10 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns ID A • Drain current limited by maximum junction temperature Publication Order Number: [MS4N60] © Bruckewell Technology Corporation Rev. A -2014 MS4N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TL TPKG PD Value Unit 300 °C 260 °C Total Power Dissipation(@TC = 25 °C) 100 W 100 W Derating Factor above 25 °C 0.8 W/°C -55 to +150 °C 150 °C TL Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds TSTG Operating Junction Temperature TJ Storage Temperature Note: 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C. 3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C. Thermal Characteristics Value Typ. Symbol Parameter RθJC Thermal Resistance,Junction-to-Case -- -- 1.25 °C/W RθJA Thermal Resistance,Junction-to-Ambient -- -- 62.5 °C/W Min. Units Max. Static Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0 V , ID = 250μA 600 -- -- V △BVDSS Breakdown Voltage Temperature ID= 250μA, Referenced to 25°C -- 0.6 -- V/°C /△TJ Coefficient VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V IDSS Drain-Source Leakage Current -- -- 1 10 uA nA IGSS Gate-Source Leakage,Forward VGS = ±30 -- -- 100 nA VGS = -10 V , ID = 2.25 A -- 2.0 2.5 Ω Min Typ. Max. Units -- 16 -- nC -- 2.5 -- nC -- 6.5 -- nC RDS(ON) Static Drain-Source On-state Resis-tance Dynamic Characteristics Symbol Parameter Qg Qgs Qgd VDS = 600 V , VGS = 0 V VDS = 480 V , TC = 125°C Test Conditions Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) Publication Order Number: [MS4N60] VDS = 480 V, VGS = 10 V, ID = 4.5 A © Bruckewell Technology Corporation Rev. A -2014 MS4N60 N-Channel Enhancement Mode Power MOSFET Dynamic Characteristics Symbol Parameter td(on) tr Turn-On Delay Time Rise Time td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance COSS CRSS Test Conditions Output Capacitance Reverse Transfer Capacitance Publication Order Number: [MS4N60] VDD = 300 V, ID = 4.5 A, VGS = 10 V, RG = 25 Ω, RD =75 Ω VGS = 0 V, VDS = 25 V, f = 1MHz Min Typ. Max. Units -- 10 -- ns -- 40 -- ns -- 40 -- ns -- 50 -- ns -- 560 -- pF -- 55 -- pF -- 7 -- pF © Bruckewell Technology Corporation Rev. A -2014 MS4N60 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MS4N60] © Bruckewell Technology Corporation Rev. A -2014 MS4N60 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MS4N60] © Bruckewell Technology Corporation Rev. A -2014 MS4N60 N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS4N60] © Bruckewell Technology Corporation Rev. A -2014