MSF20N50 N-Channel Enhancement Mode Power MOSFET Description The MSF20N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Switching Mode Power Supply • LCD Panel Power • Adapter • E-bike Charger Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V Continuous Drain Current (TC=25°C) 20 A Continuous Drain Current (TC=100°C) 13 A IDM Drain Current Pulsed 80 A EAS Single Pulsed Avalanche Energy 1100 mJ EAR Repetitive Avalanche Energy 28 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns Tj, Tstg Operating Junction and Storage Temperature -55~+150 °C ID • Drain current limited by maximum junction temperature Publication Order Number: [MSF20N50] © Bruckewell Technology Corporation Rev. A -2014 MSF20N50 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol Parameter PD Value Unit Power Dissipation (TC=25°C) 40 W Power Dissipation (TC=100°C) 0.35 W NOTE: 1. Repetitive rating; pulse width limited by maximum junction temperature. Thermal characteristics Symbol Parameter Max. Units 3.3 Rthjc Typical thermal resistance °C/W 62.5 RθJA Static Characteristics Symbol Test Conditions Min Typ. Max. Units 4.0 V VGS VDS = VGS, ID=250μA *RDS(ON) VGS=10V , ID=9.0A -- 0.21 0.26 Ω BVDSS VGS=0 V , ID=250μA 500 -- -- V △BVDSS /△TJ ID=250μA, Referenced to 25°C IDSS 0.5 VDS=500V , VGS= 0 V VDS=400V , VGS= 0 V , Tj= 125°C IGSSF VDS =30V, VDs=0 V IGSSR VDS =-30V, VDs=0 V Dynamic Characteristics Symbol Parameter CISS 2.0 Test Conditions Input Capacitance VDS=25V, VGS=0V, -- -- 1 10 uA 100 nA -- -- -100 nA Min Typ. Max. Units -- 2700 -- pF -- 400 -- pF COSS Output Capacitance CRSS Reverse Transfer Capacitance -- 40 -- pF td(on) Turn-On Time -- 100 -- ns tr Turn-On Time VDS=250 V, ID=20A, -- 400 -- ns td(off) Turn-Off Delay Time RG=25Ω -- 100 -- ns tf Turn-Off Fall Time -- 100 -- ns Qg Total Gate Charge -- 70 -- nC -- 18 -- nC -- 35 -- nC Qgs Gate-Source Charge Qgd Gate-Drain Charge (Miller Charge) Publication Order Number: [MSF20N50] f=1.0MHz VDS=400V,ID=20A, VGS=10 V © Bruckewell Technology Corporation Rev. A -2014 MSF20N50 N-Channel Enhancement Mode Power MOSFET Source-Drain Diode Characteristics Symbol Test Conditions Min Typ. Max. IS -- -- 20 ISM -- -- 80 -- -- 1.5 V -- 550 -- ns -- 7.2 -- uC VSD trr Qrr Units A IF=18A , VGS=0 IF=18A , VGS=0 , dIF/dt=100A/μs NOTE: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L= 5.5mH,IAS= 20.0A,VDD=50V,RG=25Ω,Starting TJ=25°C 3. ISD ≤ 20.0 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSF20N50] © Bruckewell Technology Corporation Rev. A -2014 MSF20N50 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSF20N50] © Bruckewell Technology Corporation Rev. A -2014 MSF20N50 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSF20N50] © Bruckewell Technology Corporation Rev. A -2014 MSF20N50 N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSF20N50] © Bruckewell Technology Corporation Rev. A -2014