MSD2N70 700V N-Channel MOSFET Description The MSD2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • 100% EAS Test • Rugged Gate Oxide Technology • Extremely Low Intrinsic Capacitances • Remarkable Switching Characteristics • Unequalled Gate Charge: 10.5 nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V • RoHS compliant package Application • Adapter • Switching Mode Power Supply Packing & Order Information Part No./ R：2,500/Reel Part No./ T：80/Tube , 4,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±30 V Continuous Drain Current @ TC=25°C 1.6 A Continuous Drain Current @ TC=70°C 1.0 A 6 A ID IDM Pulsed Drain Current Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 MSD2N70 700V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy a Value Unit 110 mJ 4.4 mJ 1.6 A IAR Continuous Source Current (Diode Conduction) dV/dt Peak Diode Recovery dV/dt 5.5 V/ns Power Dissipation (TC=25°C) 44 W Power Dissipation (TC=100°C) 0.22 W -55 to +150 °C PD TJ/TSTG Operating Junction and Storage Temperature NOTE: 1. Repetitive rating; pulse width limited by maximum junction temperature. Thermal Characteristics (Tc=25°C unless otherwise noted) Symbol Parameter Maximum Rthjc Typical thermal resistance 2.87 RθJA Typical thermal resistance 55 Units °C/W * When mounted on the minimum pad size recommended (PCB Mount) Static Characteristics Symbol Test Conditions Min Typ. Max. Units 4.0 V VGS VDS = VGS, ID = 250μA 2.0 *RDS(ON) VGS = 10V , ID = 0.8 A -- 5.5 6.0 Ω BVDSS VGS = 0 V , ID = 250 μA 700 -- -- V △BVDSS /△TJ ID = 250μA, Referenced to 25°C IDSS VDS = 700 V , VGS = 0 V VDS = 560 V , VGS = 0 V , Tj = 125°C IGSSF VDS = 30 V, VDs = 0 V IGSSR VDS = -30 V, VDs = 0 V 0.7 -- -- 10 100 uA 100 nA -- -- -100 nA Min Typ. Max. Units -- 340 445 pF -- 45 60 pF CRSS -- 7.5 10 pF td(on) -- 10 20 ns Dynamic Characteristics Symbol Test Conditions CISS COSS VDS = 25 V, VGS = 0 V, F = 1.0MHz tr VDS = 350 V, ID = 1.6 A, -- 25 50 ns td(off) RG = 25 Ω -- 20 40 ns -- 25 50 ns tf Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 MSD2N70 700V N-Channel MOSFET Dynamic Characteristics Symbol Test Conditions Min Typ. Max. Units -- 10.5 14 nC -- 2.0 -- -- 4.0 -- Min Typ. Max. IS -- -- 1.6 ISM -- -- 6 -- -- 1.5 V -- 250 -- ns -- 1.2 -- uC Qg Qgs VDS = 560 V,ID = 1.6 A, VGS = 10 V Qgd Source-Drain Diode Characteristics Symbol Test Conditions VSD trr Qrr Units A IF = 1.6 A , VGS = 0 V IF = 1.6 A , VGS = 0 V , dIF/dt=100A/μs NOTE: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=1.6A, VDD=50V, RG=25W, Starting TJ =25°C 3. ISD≤1.6A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 MSD2N70 700V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 MSD2N70 700V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 MSD2N70 700V N-Channel MOSFET ■Characteristics Test Circuit & Waveform Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 MSD2N70 700V N-Channel MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 MSD2N70 700V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014