MSF2N60 600V N-Channel MOSFET Description The MSF2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Open Framed Power Supply • Adapter • STB Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 2.0 A Drain Current -Continuous (TC=100°C) 1.3 A IDM Drain Current Pulsed 8.0 A EAS Single Pulsed Avalanche Energy 120 mJ EAR Repetitive Avalanche Energy 5.4 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns TJ,TSTG Operating and Storage Temperature Range -55 to +150 °C ID Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014 MSF2N60 600V N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter PD TL Total Power Dissipation (TC = 25 °C) Derating Factor above 25 °C Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds Value Unit 23 W 0.18 W/°C 300 °C • Drain current limited by maximum junction temperature Thermal characteristics (Tc=25°C unless otherwise noted) Symbol Parameter Max. Rthjc Junction-to-Case 5.5 RθJA Junction-to-Ambient 62.5 Units °C/W On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units VGS Gate Threshold Voltage VDS = VGS,ID = 250μA 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V,ID = 3.5 A -- 4.0 4.7 Ω Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS Breakdown Voltage /△TJ Temperature Coefficient IDSS IGSSF IGSSR Test Conditions Min Typ. Max. Units VGS = 0 V , ID=250μA 600 -- -- V -- 0.6 -- V/°C -- -- 10 μA VGS = 30 V , VDS = 0 V -- -- 100 nA VGS = -30 V , VDS = 0 V -- -- -100 nA Min Typ. Max. Units -- 320 420 pF -- 35 46 pF -- 4.5 6.0 pF -- 9.5 13 -- 1.6 -- -- 4.0 -- ID = 250μA, Referenced to 25°C Zero Gate Voltage Drain VDS = 600 V , VGS = 0 V Current VDS = 480 V , TC = 125°C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Symbol Parameter CISS Test Conditions Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Publication Order Number: [MSF2N60] VDS = 25 V, VGS = 0 V, f= 1.0MHz VDS = 480 V,ID = 2 A, VGS = 10 V 100 © Bruckewell Technology Corporation Rev. A -2014 MSF2N60 600V N-Channel MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 8 30 ns td(on) Turn-On Time tr Turn-On Time VDS = 300 V, ID = 2 A, -- 23 60 ns td(off) Turn-Off Delay Time RG = 25 Ω -- 25 60 ns tf Turn-Off Fall Time -- 28 70 ns Min Typ. Max. Units Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current -- -- 2.0 ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 6.0 VSD Source-Drain Diode Forward Voltage IS = 2 A , VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time IS = 2 A , VGS = 0 V -- 230 -- ns Qrr Reverse Recovery Charge diF/dt=100A/μs -- 1.0 -- μC A Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3. ISD≦2A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014 MSF2N60 600V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014 MSF2N60 600V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014 MSF2N60 600V N-Channel MOSFET ■Characteristics Test Circuit & Waveform Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014 MSF2N60 600V N-Channel MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014 MSF2N60 600V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014