MSU5N60

MSU5N60
600V N-Channel MOSFET
Description
The MSU5N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-251
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge : 12.8 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V
Dimensions in
Dimensions in
Millimeters
Inches
• 100% Avalanche Tested
• RoHS compliant package
Symbol
min
max
min
max
Packing & Order Information
A
2.15
2.45
0.85
0.96
80/Tube ; 4,000/Box
A1
1.00
1.40
0.39
0.55
B
1.25
1.75
0.49
0.69
b
0.45
0.75
0.18
0.3
b1
0.65
0.95
0.26
0.37
C
0.38
0.64
0.15
0.25
C1
0.38
0.64
0.15
0.25
D
6.30
6.70
2.48
2.64
D1
5.10
5.50
2.01
2.17
E
5.30
5.70
2.09
2.24
e
2.3 (typ.)
0.91 (typ.)
e1
4.4
4.8
1.73
1.89
L
7.4
8.0
2.91
3.15
Graphic symbol
Publication Order Number: [MSU5N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU5N60
600V N-Channel MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
4.5
A
Drain Current -Continuous (TC=100°C)
2.6
A
IDM
Drain Current Pulsed
18
A
EAS
Single Pulsed Avalanche Energy
34.9
mJ
EAR
Repetitive Avalanche Energy
5.0
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
Power Dissipation (TC = 25 °C)
50
W
- Derate above 25°C
0.4
W/°C
-55 to +150
°C
300
°C
ID
PD
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8'' from
case for 5 seconds
●Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Max.
RθJc
Junction-to-Case
2.3
RθJA
Junction-to-Ambient
110
Units
°C/W
On Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
VGS
VDS = VGS , ID = 250μA
2.0
--
4.0
V
*RDS(ON)
VGS = 10 V , ID = 2.25 A
--
2.0
1.5
Ω
Min
Typ.
Max.
Units
600
--
--
V
--
0.65
--
V/°C
--
--
1
μA
Off Characteristics
Symbol
Test Conditions
BVDSS
VGS = 0 V , ID=250μA
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
VDS = 600 V , VGS = 0 V
VDS = 480 V , VC = 125°C
10
IGSSF
VGS = 30 V , VDS = 0 V
--
--
100
nA
IGSSR
VGS = -30 V , VDS = 0 V
--
--
-100
nA
Publication Order Number: [MSU5N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU5N60
600V N-Channel MOSFET
Switching Characteristics
Symbol
Test Conditions
td(on)
Min
Typ.
Max.
Units
--
10
--
ns
tr
VDS = 250 V, ID = 5 A,
--
40
--
ns
td(off)
RG = 25 Ω
--
40
--
ns
--
50
--
ns
--
12.8
--
nC
--
2.4
--
nC
--
7.1
--
nC
Min
Typ.
Max.
Units
--
560
580
pF
--
55
58
pF
--
7.0
7.2
pF
Min
Typ.
Max.
Units
IS
--
--
5
ISM
--
--
20
tf
Qg
Qgs
VDS = 400 V,ID = 5 A,
VGS = 10 V
Qgd
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V,
F = 1.0MHz
CRSS
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
A
VSD
IS = 5 A , VGS = 0 V
--
--
1.4
V
trr
IS = 5 A , VGS = 0 V
--
260
--
ns
Qrr
diF/dt = 100A/μs
--
2.1
--
μC
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L= 55mH,IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ=25℃
3. IAS=4.5A, VDD=50V, L=4mH, VG=10V, starting TJ=+25°C.
4. ISD≦4A, di/dt≦100A/μs,VDD≦BVDSS, Starting TJ=25℃
5. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
6. Essentially Independent of Operating Temperature
Publication Order Number: [MSU5N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU5N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSU5N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU5N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSU5N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU5N60
600V N-Channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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permitted by applicable law, Bruckewell disclaims
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non-infringement and merchantability.
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Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSU5N60]
© Bruckewell Technology Corporation Rev. A -2014