MSU5N50 500V N-Channel MOSFET Description The MSU5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Rugged Gate Oxide Technology • Extremely Low Intrinsic Capacitances • Remarkable Switching Characteristics • Unequalled Gate Charge : 2.5 nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V • 100% Avalanche Tested Symbol Dimensions in Dimensions in Millimeters Inches min max min max • RoHS compliant package A 2.15 2.45 0.85 0.96 Packing & Order Information A1 1.00 1.40 0.39 0.55 80/Tube ; 4,000/Box B 1.25 1.75 0.49 0.69 b 0.45 0.75 0.18 0.3 b1 0.65 0.95 0.26 0.37 C 0.38 0.64 0.15 0.25 C1 0.38 0.64 0.15 0.25 D 6.30 6.70 2.48 2.64 D1 5.10 5.50 2.01 2.17 E 5.30 5.70 2.09 2.24 Graphic symbo e Publication Order Number: [MSU5N50] 2.3 (typ.) 0.91 (typ.) e1 4.4 4.8 1.73 1.89 L 7.4 8.0 2.91 3.15 © Bruckewell Technology Corporation Rev. A -2014 MSU5N50 500V N-Channel MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 5 A Drain Current -Continuous (TC=100°C) 3 A IDM Drain Current Pulsed 20 A EAS Single Pulsed Avalanche Energy 305 mJ EAR Repetitive Avalanche Energy 7.6 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns Power Dissipation (TC = 25 °C) 40 W 0.32 W/°C -55 to +150 °C 300 °C ID PD TJ,TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds ●Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Max. RθJc Junction-to-Case 2.3 RθJA Junction-to-Ambient 110 Units °C/W On Characteristics Symbol Test Conditions Min Typ. Max. Units VGS VDS = VGS , ID = 250μA 2.0 -- 4.0 V *RDS(ON) VGS = 10 V , ID = 2.25 A -- 2.0 1.5 Ω Min Typ. Max. Units 500 -- -- V -- 0.6 -- V/°C -- -- 1 μA Off Characteristics Symbol Test Conditions BVDSS VGS = 0 V , ID=250μA △BVDSS /△TJ ID = 250μA, Referenced to 25°C IDSS VDS = 500 V , VGS = 0 V VDS = 400 V , VC = 125°C 10 IGSSF VGS = 30 V , VDS = 0 V -- -- 100 nA IGSSR VGS = -30 V , VDS = 0 V -- -- -100 nA Publication Order Number: [MSU5N50] © Bruckewell Technology Corporation Rev. A -2014 MSU5N50 500V N-Channel MOSFET Switching Characteristics Symbol Test Conditions td(on) Min Typ. Max. Units -- 10 -- ns tr VDS = 250 V, ID = 5 A, -- 50 -- ns td(off) RG = 25 Ω -- 50 -- ns -- 50 -- ns -- 20 -- nC -- 2.5 -- nC -- 10 -- nC -- 520 670 pF -- 80 104 pF -- 15 20 pF Min Typ. Max. Units IS -- -- 5 ISM -- -- 20 tf Qg Qgs VDS = 400 V,ID = 5 A, VGS = 10 V Qgd CISS COSS VDS = 25 V, VGS = 0 V, F = 1.0MHz CRSS Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions A VSD IS = 5 A , VGS = 0 V -- -- 1.4 V trr IS = 5 A , VGS = 0 V -- 260 -- ns Qrr diF/dt = 100A/μs -- 2.1 -- μC Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L= 22mH,IAS=5A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3. ISD≦5A, di/dt≦100A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSU5N50] © Bruckewell Technology Corporation Rev. A -2014 MSU5N50 500V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSU5N50] © Bruckewell Technology Corporation Rev. A -2014 MSU5N50 500V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSU5N50] © Bruckewell Technology Corporation Rev. A -2014 MSU5N50 500V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSU5N50] © Bruckewell Technology Corporation Rev. A -2014