MS9N90

MS9N90
900V N-Channel MOSFET
Description
The MS9N90 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Max 1.4 Ω )@VGS=10V
• Gate Charge (Typical 47nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
9
A
Drain Current -Continuous (TC=100°C)
6
A
IDM
Drain Current -Pulsed
36
A
EAS
Single Pulsed Avalanche Energy
900
mJ
EAR
Repetitive Avalanche Energy
28
mJ
dV/dt
Peak Diode Recovery dV/dt
4.0
V/ns
Power Dissipation (TC=25°C)
280
W
2.22
W/°C
-55 to +150
°C
ID
PD
TJ/TSTG
- Derate above 25C
Operating Junction and Storage Temperature
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS9N90
900V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Value
Unit
300
°C
• Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Junction-to-Case
--
0.75
RθJA
Junction-to-Ambient
--
62.5
°C/W
On Characteristics
Symbol
Parameter
Gate Threshold Voltage
VGS
Static Drain-Source
*RDS(ON)
On-Resistance
Off Characteristics
Symbol
Parameter
Test Conditions
Min
VDS = VGS, ID = 250μA
3.0
VGS = 10 V , ID = 4.5 A
--
--
V
--
1.05
--
V/°C
--
--
10
μA
VDS = 30 V, VDS = 0 V
--
--
100
μA
VDS = -30 V, VDS = 0 V
--
--
-100
nA
Zero Gate Voltage Drain Current
Dynamic Characteristics
Symbol
Parameter
CISS
VDS = 900 V , VGS = 0 V
VDS = 720 V , VC = 125°C
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Publication Order Number: [MS12N60]
Ω
--
IDSS
Reverse
1.40
900
ID = 250μA, Referenced to
25°C
Gate-Body Leakage Current,
V
Units
Breakdown Voltage Temperature
IGSSR
5.0
Max.
△BVDSS /△TJ
Forward
Units
Typ.
VGS = 0 V , ID = 250μA
Gate-Body Leakage Current,
1.10
Max.
Min
Drain-Source Breakdown Voltage
Coefficient
Typ.
Test Conditions
BVDSS
IGSSF
Units
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
100
Min
Typ.
Max.
Units
--
2200
--
pF
--
180
--
pF
--
15
--
pF
© Bruckewell Technology Corporation Rev. A -2014
MS9N90
900V N-Channel MOSFET
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
60
--
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDS = 450 V, ID = 9 A,
--
130
--
ns
td(off)
Turn-Off Delay Time
RG = 25 Ω
--
110
--
ns
tf
Turn-Off Fall Time
--
80
--
ns
Qg
Total Gate Charge
--
47
--
nC
--
15
--
nC
--
20
--
nC
Min
Typ.
Max.
Units
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 720 V,ID = 10 A,
VGS= 9 V
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source-Drain Diode Forward Current
--
--
9.0
ISM
ISM Pulsed Source-Drain Diode Forward Current
--
--
35
VSD
Source-Drain Diode Forward Voltage
IS= 9 A , VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
IS= 9 A , VGS = 0 V
--
550
--
ns
Qrr
Reverse Recovery Charge
diF/dt=100A/μs
--
6.5
--
μC
A
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 21mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS9N90
900V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014