MS6N80

MS6N80
800V N-Channel MOSFET
Description
The MS6N80 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge : 37nC (Typ.)
• Extended Safe Operating Area
• RoHS compliant package
Application
•• Adapter
• Switching Mode Power Supply
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
Drain-Source Voltage
800
V
Drain Current -Continuous (TC=25°C)
36
A
Drain Current -Continuous (TC=100°C)
4.2
A
IDM
Drain Current –Pulsed
28
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
580
mJ
EAR
Repetitive Avalanche Energy
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
156
W
PD
Power Dissipation (TC=25°C)
1.25
W/°C
VDSS
ID
Publication Order Number: [MS6N80]
- Derate above 25°C
© Bruckewell Technology Corporation Rev. A -2014
MS6N80
800V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TJ/TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Value
Unit
-55 to +150
°C
300
°C
●Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Junction-to-Case
--
0.75
RθJA
Junction-to-Ambient
--
62.5
°C/W
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
2.5
--
4.5
V
--
1.6
2.3
Ω
VGS
Gate Threshold Voltage
VDS = VGS,ID = 250μA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V,ID = 3 A
Off Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
△BVDSS
Breakdown Voltage
/△TJ
Temperature Coefficient
IDSS
IGSSF
IGSSR
Test Conditions
Min
Typ.
Max.
Units
VGS = 0 V , ID = 250μA
800
--
--
V
--
0.6
--
V/°C
--
--
10
μA
VGS = 30 V , VDS =0 V
--
--
100
μA
VGS = -30 V , VDS =0 V
--
--
100
nA
Min
Typ.
Max.
Units
--
1500
2010
pF
--
145
190
pF
--
13
20
pF
ID = 250μA, Referenced to 25°C
Zero Gate Voltage Drain
VDS = 800 V , VGS = 0 V
Current
VDS = 640 V , VC = 125°C
Gate-Body Leakage
Current,Forward
Gate-Body Leakage
Current,Reverse
Dynamic Characteristics
Symbol
Parameter
CISS
Units
Test Conditions
Input Capacitance
COSS
Coss Output Capacitance
CRSS
Crss Reverse Transfer Capacitance
Publication Order Number: [MS6N80]
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
100
© Bruckewell Technology Corporation Rev. A -2014
MS6N80
800V N-Channel MOSFET
Switching Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
40
--
ns
td(on)
Turn-On Time
tr
Turn-On Rise Time
VDS = 400 V, ID = 6 A,
--
120
--
ns
td(off)
Turn-Off Delay Time
RG = 25 Ω
--
60
--
ns
tf
Turn-Off Fall Time
--
70
--
ns
Qg
Total Gate Charge
--
35
--
nC
--
11
--
nC
--
15
--
nC
Min
Typ.
Max.
Units
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 640 V,ID = 6 A,
VGS = 7 V
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source-Drain Diode Forward Current
--
--
7
ISM
ISM Pulsed Source-Drain Diode Forward Current
--
--
28
VSD
Source-Drain Diode Forward Voltage
IS = 6 A , VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
IS = 6 A , VGS = 0 V
--
650
--
ns
Qrr
Reverse Recovery Charge
diF/dt = 100A/μs
--
8
--
μC
A
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 34.0mH, IAS =6.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 6.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Publication Order Number: [MS6N80]
© Bruckewell Technology Corporation Rev. A -2014
MS6N80
800V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MS6N80]
© Bruckewell Technology Corporation Rev. A -2014
MS6N80
800V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS6N80]
© Bruckewell Technology Corporation Rev. A -2014
MS6N80
800V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM
FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
Publication Order Number: [MS6N80]
© Bruckewell Technology Corporation Rev. A -2014
MS6N80
800V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MS6N80]
© Bruckewell Technology Corporation Rev. A -2014
MS6N80
800V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS6N80]
© Bruckewell Technology Corporation Rev. A -2014