DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for (Unit: mm) low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.1 1.5±0.1 1.6±0.2 FEATURES 0.8 MIN. IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) VCBO Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation Thermal Resistance PT * Rth(j-a)* 1.2 62.5 W °C/W Junction Temperature Tj 150 °C −65 to +150 °C Storage Temperature Tstg 20 B 0.42 ±0.06 • Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. Collector to Base Voltage C E V 4.0±0.25 NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, 2.5±0.1 • Low Noise and High Gain 0.42±0.06 1.5 0.47 ±0.06 3.0 −0.03 0.41 +0.05 Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) * mounted on 16 cm2 × 0.7 mm Ceramic Substrate Document No. P10357EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan © 1985 2SC3357 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 µA VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µA VEB = 1.0 V, IC = 0 DC Current Gain hFE* Gain Bandwidth Product fT Feed-Back Capacitance Cre** 50 120 300 6.5 0.65 VCE = 10 V, IC = 20 mA GHz 1.0 VCE = 10 V, IC = 20 mA pF VCB = 10 V, IE = 0, f = 1.0 MHz S21e 9 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Noise Figure NF 1.8 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz 2 Insertion Power Gain * 3.0 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge. hFE Classification Class RH RF RE Marking RH RF RE hFE 50 to 100 80 to 160 125 to 250 TYPICAL CHARACTERISTICS (TA = 25 °C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE f = 1.0 MHz 2.0 Ceramic Substrate 16 cm2 × 0.7 mm 1.0 Free Air 0 Rth(j-a) 312.5 ˚C/W 50 100 TA-Ambient Temperature-°C 2 Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-W 2 150 1 0.5 0.3 0 0.5 1 2 5 10 VCB-Collector to Base Voltage-V 20 30 2SC3357 DC CURRENT GAIN vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 200 15 VCE = 10 V f = 1.0 GHz 100 |S21e|2-Insertion Gain-dB hFE-DC Current Gain VCE = 10 V 50 20 10 0.5 1 5 10 10 5 0 0.5 50 1 5 10 50 70 IC-Collector Current-mA IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT 10 5.0 20 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-MHz Gmax 3.0 2.0 1.0 0.5 0.3 |S21e|2 10 0.2 VCE = 10 V IC = 20 mA VCE = 10 V 0.1 0 0 0.5 10 5.0 10 0.1 30 0.2 0.4 0.6 0.8 1.0 IC-Collector Current-mA f-Frequency-GHz NOISE FIGURE vs. COLLECTOR CURRENT INTERMODULATION DISTORTION vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1.0 GHz 6 IM3 4 −70 IM2, IM3 (dB) NF-Noise Figure-dB −80 5 3 2 −60 IM2 −50 0 0.5 1 5 10 IC-Collector Current-mA 50 70 VCE = 10 V at V0 = 100 dB µ V/50 Ω Rg = Re = 50 Ω −40 −30 IM2 f = 90 + 100 MHz IM3 f = 2 × 200 − 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA 3 2SC3357 S-PARAMETER VCE = 10 V, IC = 40 mA, ZO = 50 Ω S11 ∠ S11 S21 ∠ S21 S12 ∠ S12 S22 ∠ S22 200 0.196 −94.4 13.023 102.4 0.043 74.5 0.444 −21.1 400 0.103 −118.3 6.852 89.2 0.081 77.4 0.398 −25.3 600 0.056 −131.1 4.632 78.3 0.118 77.5 0.399 −26.9 f (MHz) 800 0.024 −43.7 3.527 75.9 0.152 78.0 0.414 −28.9 1000 0.008 −2.0 2.854 68.7 0.188 78.4 0.440 −33.5 1200 0.039 13.1 2.421 65.7 0.218 75.7 0.461 −33.3 1400 0.072 11.8 2.118 59.0 0.255 71.7 0.479 −36.3 1600 0.102 9.6 1.887 57.1 0.278 73.1 0.499 −35.5 1800 0.129 8.6 1.681 52.5 0.308 71.3 0.515 −38.8 2000 0.151 9.8 1.579 51.4 0.339 71.8 0.537 −35.9 VCE = 10 V, IC = 20 mA, ZO = 50 Ω S11 ∠ S11 S21 ∠ S21 S12 ∠ S12 S22 ∠ S22 200 0.130 −109.2 13.430 98.1 0.042 79.0 0.403 −22.1 400 0.073 −134.1 6.930 87.2 0.081 80.6 0.382 −24.7 600 0.037 −146.6 4.690 79.4 0.119 79.4 0.392 −25.6 800 0.010 177.1 3.560 75.2 0.154 79.7 0.412 −27.1 1000 0.024 23.7 2.878 68.2 0.191 76.5 0.440 −31.9 1200 0.056 17.2 2.439 65.4 0.220 76.8 0.463 −32.3 1400 0.093 13.8 2.133 59.0 0.257 72.9 0.483 −35.7 1600 0.124 12.0 1.898 57.3 0.280 74.0 0.504 −35.3 1800 0.151 11.0 1.693 52.9 0.311 72.4 0.519 −38.4 2000 0.174 13.4 1.591 52.0 0.341 72.8 0.542 −36.3 f (MHz) 4 2SC3357 0.1 6 0.3 4 1.6 0.6 5 0. 2.0 50 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 0.4 20 10 4.0 3.0 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 0.3 5.0 10 0.27 0.23 0 1. 5.0 ) 1.0 E NC TA X AC −J––O– RE –Z 4.0 ( 0.8 0 0.6 3. 0. 3 −4 0.1 1 0 9 E IV AT NE G 5 0.4 2.0 1.8 4 0.3 6 0.1 1.6 1.4 0.35 0.15 −70 1.2 3 0.3 7 0 0.36 0.14 −80 1.0 −6 0.9 0.1 −90 0.37 0.13 0.38 0.12 0.8 32 0.2 0.7 0. 0. 0.6 18 0 −5 0. 0.2 8 0.2 2 −20 f = 2.0 GHz 0. 2 9 0.2 1 0.3 −3 0.2 0 0 0 4 −10 8 0. 0.39 0.11 −100 0.40 0.10 −11 0 0. 4 0. 3 07 30 −1 0.4 1 0.0 0.4 9 0.0 2 20 8 −1 S21e-FREQUENCY CONDITION IC = 20 mA IC =0.620 mA 0.2 0.26 0.24 f = 0.2 GHz 0.4 f = 0.2 GHz 0. 50 50 ) 20 0.1 ( 20 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO 0 0.2 f = 20 GHz 0.2 WAVELE NG 0.2 0.8 10 S11 0.1 0.3 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO 0.4 40 N T EN 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.4 1.2 70 0 0.2 0 0.3 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 P . T O 0.1 14 0.4 6 SIT 0 06 40 EN IVE ON 0 4 RE MP 0. −1 AC CO 0.15 0.35 19 0. 31 0. 07 0. 3 4 0. 0 13 1.0 8 0.0 2 0.4 20 1 0.14 0.36 80 90 0.9 VCE = 10 V 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.7 CONDITION 9 0.0 1 0.4 0.8 S11e, S22e-FREQUENCY S12e-FREQUENCY VCE = 10 V IC = 20 mA CONDITION 90° 90° 120° VCE = 10 V IC = 20 mA 120° 60° f = 0.2 GHz 60° f = 2.0 GHz S21e 150° 30° 30° 150° S12e f = 2.0 GHz 180° f = 0.2 GHz 3 6 9 12 15 0° 180° −30° −150° −60° −120° −90° 0.1 0.2 0.3 −150° 0.4 0.5 0° −30° −60° −120° −90° 5 2SC3357 [MEMO] 6 2SC3357 [MEMO] 7 2SC3357 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5