MS5N50-A N-Channel Enhancement Mode Power MOSFET Description The MS5N50-A is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=550V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS & Halogen free compliant package Application • Ballast • Inverter Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain to Source Voltage 500 V VG Gate to Source Voltage ±30 V Continuous Drain Current (TC=25°C) 5 Continuous Drain Current (TC=100°C) 3.2 IDM Drain Current Pulsed 20 A EAS Single Pulsed Avalanche Energy 305 mJ EAR Repetitive Avalanche Energy 10.1 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns ID A • Drain current limited by maximum junction temperature Publication Order Number: [MS5N50-A] © Bruckewell Technology Corporation Rev. A -2014 MS5N50-A N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol Parameter TL TPKG PD Value Unit 300 °C 260 °C Total Power Dissipation(@TC = 25 °C) 100 W 101 W Derating Factor above 25 °C 0.81 W/°C -55 to +150 °C 150 °C TL Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds TSTG Operating Junction Temperature TJ Storage Temperature Note: 1. TJ=+25°C to +150°C. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=4.5A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C. 4. IAS=4.5A, VDD=50V, L=15mH, RG=25Ω, starting TJ=+25°C. Thermal Characteristics Value Typ. Symbol Parameter RθJC Thermal Resistance,Junction-to-Case -- -- 1.47 °C/W RθJA Thermal Resistance,Junction-to-Ambient -- -- 62.5 °C/W Static Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage Min. Test Conditions Min Typ. Max. Units VGS = 0 V,ID = 250 uA 500 -- -- V -- 550 -- V -- 0.64 -- V/°C 2.0 -- 4.0 V -- -- 1 10 uA nA VGS = ±30 -- -- ±100 nA VGS = -10V , ID = 2.5 A -- 1.3 1.6 Ω Min Typ. Max. Units Tj = 150°C △BVDSS Breakdown Voltage Temperature ID = 250μA, Referenced /△TJ Coefficient to 25°C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage,Forward RDS(ON) Static Drain-Source On-state Resis-tance Units Max. VDS = 500 V , VGS = 0 V VDS = 400 V , TC = 125°C Dynamic Characteristics Symbol Parameter Test Conditions Qg Total Gate Charge VDD = 250 V, -- 15 -- nC Qgs Gate-Source Charge VGS = 10 V, -- 3.5 -- nC Qgd Gate-Drain Charge (Miller Charge) ID = 5 A -- 6 -- nC Publication Order Number: [MS5N50-A] © Bruckewell Technology Corporation Rev. A -2014 MS5N50-A N-Channel Enhancement Mode Power MOSFET Dynamic Characteristics Symbol Parameter td(on) tr Turn-On Delay Time Rise Time td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance COSS CRSS Test Conditions Output Capacitance Reverse Transfer VDD = 250 V, ID = 4.5 A, VGS = 10 V, RG = 10 Ω VGS = 0 V, VDS = 25 V, f = 1MHz Capacitance Min Typ. Max. Units -- 45 -- ns -- 26 -- ns -- 133 -- ns -- 214 -- ns -- 492 -- pF -- 83 -- pF -- 16 -- pF Source-Drain Diode Symbol Parameter Test Conditions Min Typ. Max. Units IS IS = 5 A, VGS = 0 V -- -- 1.4 V ISM VD=VG=0, -- -- 5 A VSD VS = 1.3 V -- -- 20 A trr VGS = 0, IF = 5 A, -- 268 -- ns Qrr dI/dt = 100A/us -- 2.1 -- uC *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Publication Order Number: [MS5N50-A] © Bruckewell Technology Corporation Rev. A -2014 MS5N50-A N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. 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Publication Order Number: [MS5N50-A] © Bruckewell Technology Corporation Rev. A -2014