V20DM120C-M3, V20DM120CHM3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES TMBS ® eSMP® Series • Trench MOS Schottky technology TO-263AC (SMPD) • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 1 2 Top View Bottom View • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V20DM120C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V MECHANICAL DATA IFSM 120 A Case: TO-263AC SMPD Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified VF at IF = 10 A (TA = 125 °C) 0.65 V TJ max. 175 °C Package TO-263AC (SMPD) Diode variations Dual common cathode Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL V20DM120C UNIT VRRM 120 V per device per diode Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range 20 IF(AV) IFSM A 10 120 A dV/dt 10 000 V/μs TJ, TSTG -40 to +175 °C Revision: 02-Apr-15 Document Number: 89989 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM120C-M3, V20DM120CHM3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A Instantaneous forward voltage per diode IF = 5 A IF = 10 A VR = 90 V Reverse current at rated VR per diode VR = 120 V SYMBOL TA = 25 °C VF (1) TA = 125 °C TYP. MAX. 0.65 - 0.85 0.93 0.55 - UNIT V 0.65 0.73 TA = 25 °C 23 - μA TA = 125 °C 1.6 - mA - 600 μA 3 20 mA TA = 25 °C IR (2) TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance per device per device V20DM120C UNIT 2.8 RJC 1.5 RJA (1)(2) °C/W 48 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT PACKAGE CODE BASE QUANTITY (g) DELIVERY MODE TO-263AC (SMPD) V20DM120C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel TO-263AC (SMPD) V20DM120CHM3/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 02-Apr-15 Document Number: 89989 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM120C-M3, V20DM120CHM3 www.vishay.com Vishay General Semiconductor 25 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) RθJC = 2.8 °C/W 20 15 10 RθJA = 48 °ġ C/W 5 0 0 25 50 75 100 125 150 100 TA = 175 °C 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 175 10 Fig. 1 - Forward Current Derating Curve 9.0 30 40 60 70 D = 0.3 D = 1.0 6.0 90 100 10 000 Junction Capacitance (pF) 7.0 80 Fig. 4 - Typical Reverse Characteristics Per Diode D = 0.8 D = 0.2 5.0 D = 0.1 4.0 3.0 T 2.0 1.0 D = tp/T tp TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.0 0 2 4 6 8 10 0.1 12 1 Fig. 2 - Forward Power Loss Characteristics Per Diode Transient Thermal Impedance (°C/W) TA = 175 °C TA = 150 °C TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 Fig. 5 - Typical Junction Capacitance Per Diode 100 10 10 Reverse Voltage (V) Average Forward Current (A) Instantaneous Forward Current (A) 50 D = 0.5 8.0 Average Power Loss (W) 20 Percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 1.6 1.8 Instantaneous Forward Voltage (V) 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Revision: 02-Apr-15 Document Number: 89989 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM120C-M3, V20DM120CHM3 www.vishay.com Vishay General Semiconductor Thermal Resistance (°C/W) 50 Epoxy printed circiut board FR4 copper thickness = 70 μm 45 40 35 30 25 S(cm2) 20 1 2 3 4 5 6 7 8 9 Copper Pad Areas (cm2) Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AC (SMPD) 5() WR WR 120 Mounting Pad Layout 0,1 5() 120 5() 0,1 Revision: 02-Apr-15 Document Number: 89989 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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