MSF12N60

MSF12N60
600V N-Channel MOSFET
Description
The MSF12N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
12
A
Drain Current -Continuous (TC=100°C)
7.5
A
IDM
Drain Current Pulsed
48
A
EAS
Single Pulsed Avalanche Energy
870
mJ
IAR
Avalanche Current
12
A
EAR
Repetitive Avalanche Energy
22.5
mJ
dV/dt
Peak Diode Recovery dV/dt
3.5
V/ns
ID
Publication Order Number: [MSF12N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF12N60
600V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
PD
TJ,TSTG
Value
Unit
Power Dissipation (TC = 25 °C)
54
W
Power Dissipation (TC=100°C)
0.43
W/°C
-55 to +150
°C
Operating and Storage Temperature Range
NOTE:
1. TJ=+25°C to +150°C.
2. Repetitive rating; pulse width limited by maximum junction temperature.3. ISD=12A, dI/dt<100A/μs,
VDD<BVDSS, TJ=+150°C.
4. IAS=12A, VDD=50V, L=11mH, RG=25Ω, starting TJ=+25˚C.
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
2.0
--
4.0
V
--
0.58
0.65
Ω
600
--
--
V
--
0.5
--
V/°C
--
--
1
μA
VGS
Gate Threshold Voltage
VDS=VGS,ID=250μA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,ID=6A
BVDSS
Drain-Source Breakdown Voltage
VGS=0 V , ID=250μA
△BVDSS
Breakdown Voltage Temperature
/△TJ
Coefficient
ID=250μA, Referenced
to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS=30V , VDS=0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS=-30V , VDS=0 V
--
--
-100
nA
Min
Typ.
Max.
Units
--
1760
2290
pF
--
182
235
pF
--
21
28
pF
Min
Typ.
Max.
Units
--
30
70
ns
Dynamic Characteristics
Symbol
Parameter
CISS
VDS=600V , VGS= 0 V
VDS=480V , TC= 125°C
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Dynamic Characteristics
Symbol
Parameter
VDS=25V, VGS=0V,
f=1.0MHz
Test Conditions
10
td(on)
Turn-On Time
tr
Turn-On Time
VDS=250 V, ID=12A,
--
85
180
ns
td(off)
Turn-Off Delay Time
RG=10Ω
--
140
280
ns
tf
Turn-Off Fall Time
--
90
190
ns
Qg
Total Gate Charge
--
48
63
nC
--
8.5
--
nC
--
21
--
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Publication Order Number: [MSF12N60]
VDS=480V,ID=12A,
VGS=10 V
© Bruckewell Technology Corporation Rev. A -2014
MSF12N60
600V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
IS
Continuous Source-Drain Diode Forward Current
--
--
12
ISM
ISM Pulsed Source-Drain Diode Forward Current
--
--
48
VSD
Source-Drain Diode Forward Voltage
IS=12A , VGS= 0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=12A , VGS= 0V
--
460
--
ns
Qrr
Reverse Recovery Charge
diF/dt=100A/μs
--
4.9
--
μC
Publication Order Number: [MSF12N60]
A
© Bruckewell Technology Corporation Rev. A -2014
MSF12N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF12N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF12N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF12N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF12N60
600V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF12N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF12N60
600V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSF12N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF12N60
600V N-Channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF12N60]
© Bruckewell Technology Corporation Rev. A -2014