BB439... Silicon Variable Capacitance Diode For VHF tuned circuit applications High figure of merit BB439 1 2 Type BB439 Package SOD323 Configuration single LS(nH) Marking 1.8 white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 28 Peak reverse voltage VRM 30 Forward current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage temperature Tstg -55 ... 150 Value Unit V ( R 5k ) 1 Jul-09-2003 BB439... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 28 V - - 20 VR = 28 V, TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 43 - VR = 2 V, f = 1 MHz 31.5 34.5 37.5 VR = 3 V, f = 1 MHz 26.5 29 31.5 VR = 25 V, f = 1 MHz 4.3 5.1 6 CT2 /CT25 6 6.9 8 CT3 /CT25 5 5.8 6.5 CT/CT - - 3 % rS - 0.35 0.5 VR = 3 V, f = 50 MHz - 280 - VR = 25 V, f = 200 MHz - 600 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 3 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 3 V, VR = 25 V, f = 1 MHz Series resistance VR = 10 V, f = 100 MHz Figure of merit 1For Q details please refer to Application Note 047. 2 Jul-09-2003 BB439... Diode capacitance CT = (VR) Temperature coefficient of the diode capacitance TCc = (VR ) f = 1MHz 60 10 -3 EHD07036 pF 50 1/°C 40 TCc CT BB 439 10 -4 30 20 10 0 10 -1 10 0 10 1 V VR 10 10 -5 0 10 2 10 1 V 10 2 VR 3 Jul-09-2003