SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode C G P-TO-220-3-1 (TO-220AB) E P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type Package Ordering Code TO-220AB Q67040-S4458 SKB10N60A TO-263AB Q67040-S4459 SKW10N60A TO-247AC Q67040-S4506 SKP10N60A VCE IC VCE(sat) Tj 600V 10A 2.3V 150°C Maximum Ratings Parameter Symbol Value Unit SKP10N60A SKB10N60A SKW10N60A Collector-emitter voltage VCE DC collector current IC 600 A TC = 25°C 20 TC = 100°C 10.6 Pulsed collector current, tp limited by Tjmax ICpul s Turn off safe operating area - VCE ≤ 600V, Tj ≤ 150°C 40 40 IF Diode forward current TC = 25°C 21 TC = 100°C 10 Diode pulsed current, tp limited by Tjmax IFpul s 42 Gate-emitter voltage VGE ±20 1) tSC Short circuit withstand time VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Ptot Power dissipation TC = 25°C Tj , Tstg Operating junction and storage temperature 1) V 10 92 -55...+150 V µs W °C Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Sep-02 SKP10N60A, SKB10N60A SKW10N60A Thermal Resistance Parameter Symbol Conditions Unit Max. Value SKP10N60A SKB10N60A SKW10n60A Characteristic IGBT thermal resistance, RthJC 1.35 RthJCD 2.4 K/W junction – case Diode thermal resistance, junction – case Thermal resistance, RthJA TO-220AB TO-247AC 62 40 RthJA TO-263AB 40 junction – ambient 1) SMD version, device on PCB Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - 1.7 2 2.4 - 2.3 2.8 1.2 1.4 1.8 T j =1 5 0° C - 1.25 1.65 3 4 5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 °C T j =1 5 0° C VF Diode forward voltage V V G E = 0V , I F = 1 0 A T j =2 5 °C Gate-emitter threshold voltage VGE(th) I C = 30 0 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V, V G E = 0 V µA T j =2 5 °C - - 40 T j =1 5 0° C - - 1500 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 10 A - 6.7 - S Input capacitance Ciss V C E = 25 V , - 550 660 pF Output capacitance Coss V G E = 0V , - 62 75 Reverse transfer capacitance Crss f= 1 MH z - 42 51 Gate charge QGate V C C = 48 0 V, I C =1 0 A - 52 68 nC T O - 22 0A B - 7 - nH T O - 24 7A C - 13 - V G E = 15 V ,t S C ≤ 10 µs V C C ≤ 6 0 0 V, T j ≤ 15 0° C - 100 - Dynamic Characteristic V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case 2) Short circuit collector current IC(SC) A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Sep-02 SKP10N60A, SKB10N60A SKW10N60A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. T j =2 5 °C , V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 Ω, 1) L σ =1 8 0n H, 1) C σ = 5 5p F - 28 34 - 12 15 - 178 214 - 24 29 - 0.15 0.173 - 0.17 0.221 - 0.320 0.394 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Energy losses include “tail” and diode reverse recovery. trr ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time T j =2 5 °C , - 220 - tS V R = 2 00 V , I F = 1 0 A, - 20 - tF d i F / d t =2 0 0 A/ µs - 200 - ns Diode reverse recovery charge Qrr - 310 - nC Diode peak reverse recovery current Irrm - 4.5 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 180 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. T j =1 5 0° C V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 Ω 1) L σ =1 8 0n H, 1) C σ = 5 5p F - 28 34 - 12 15 - 198 238 - 26 32 - 0.260 0.299 - 0.280 0.364 - 0.540 0.663 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Energy losses include “tail” and diode reverse recovery. trr ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time T j =1 5 0° C - 350 - tS V R = 2 00 V , I F = 1 0 A, - 36 - tF d i F / d t =2 0 0 A/ µs - 314 - ns Diode reverse recovery charge Qrr - 690 - nC Diode peak reverse recovery current Irrm - 6.3 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 200 - A/µs 1) Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E. 3 Sep-02 SKP10N60A, SKB10N60A SKW10N60A tp = 5 µs Ic 50A 40A 30A 20A 10A 1 5 µs 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT T C =80°c T C =110°c 5 0 µs 2 0 0 µs 1A 1m s Ic DC 0 ,1 A 0A 10H z 100H z 1kH z 10kH z 100kH z 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 120W 25A 100W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 20A 80W 60W 40W 20W 0W 25°C 50°C 75°C 100°C 15A 10A 5A 0A 25°C 1 25°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) 50°C 75°C 1 0 0 °C 1 2 5 °C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Sep-02 35A 35A 30A 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SKP10N60A, SKB10N60A SKW10N60A 25A V G E= 2 0 V 20A 15V 13V 15A 11V 9V 10A 7V 5V 1V 2V 3V 4V 15V 13V 15A 11V 9V 10A 7V 5V 30A T j=+25°C +150°C 25A 20A 15A 10A 5A 2V 4V 6V 8V 10V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 35A IC, COLLECTOR CURRENT 20A 0A 0V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 0A 0V V G E= 2 0 V 5A 5A 0A 0V 25A VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) 3 ,5 V IC = 2 0 A 3 ,0 V 2 ,5 V IC = 1 0 A 2 ,0 V IC = 5 A 1 ,5 V 0 °C 5 0 °C 1 0 0 °C 1 5 0 °C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Sep-02 SKP10N60A, SKB10N60A SKW10N60A t, SWITCHING TIMES t, SWITCHING TIMES t d (o ff) 100ns tf t d (o n ) tr 10ns 0A 5A 10A 15A 20A 100ns t d (o ff) tf t d (o n ) 10ns 0Ω 25A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 25Ω, Dynamic test circuit in Figure E) tr 20Ω 40Ω 60Ω 80Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5 ,5V t, SWITCHING TIMES t d (off) 100ns t d(on ) tf 10ns 0°C tr 50°C 100°C 150°C 5 ,0V 4 ,5V 4 ,0V 3 ,5V m a x. 3 ,0V 2 ,5V ty p. 2 ,0V 1 ,5V m in. 1 ,0V -50 °C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5Ω, Dynamic test circuit in Figure E) 0 °C 5 0°C 100 °C 150 °C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Sep-02 SKP10N60A, SKB10N60A SKW10N60A 1,6m J 1 ,0m J E ts * 1,2m J 1,0m J 0,8m J E on * 0,6m J E off 0,4m J 0,2m J 0,0m J 0A 5A 10A 1 5A 20A E, SWITCHING ENERGY LOSSES 1,4m J E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. 0 ,8m J 0 ,6m J E off 0 ,4m J E on * 0 ,2m J 0Ω 2 5A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 25Ω, Dynamic test circuit in Figure E) E ts * 20Ω 40 Ω 60Ω 80 Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) 0,8mJ 0 10 K/W ZthJC, TRANSIENT THERMAL IMPEDANCE E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. 0,6mJ 0,4mJ Ets* 0,2mJ Eoff Eon* 0,0mJ 0°C D=0.5 0.2 0.1 -1 10 K/W R,(K/W) 0.4287 0.4830 0.4383 0.05 0.02 R1 -2 10 K/W 0.01 τ, (s) 0.0358 4.3*10-3 3.46*10-4 R2 C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 single pulse -3 50°C 100°C 10 K/W 1µs 150°C 10µs 100µs 1m s 10m s 100m s 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5Ω, Dynamic test circuit in Figure E) Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Sep-02 SKP10N60A, SKB10N60A SKW10N60A 1nF 25V C iss 15V C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 20V 120V 480V 10V C o ss C rss 5V 0V 0nC 25nC 50nC 10pF 0V 75nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A) 20V 30V IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 200A 20µ s 15µ s 10µ s 5µ s 0µ s 10V 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25µ s tsc, SHORT CIRCUIT WITHSTAND TIME 100pF 11V 12V 13V 14V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C) 150A 100A 50A 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj = 150°C) 8 Sep-02 SKP10N60A, SKB10N60A SKW10N60A 500ns 1400nC trr, REVERSE RECOVERY TIME 300ns I F = 20A 200ns I F = 10A I F = 5A 100ns Qrr, REVERSE RECOVERY CHARGE 1200nC 400ns d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) 600nC IF = 5 A 400nC 200nC d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) 16A 80 0A / µs IF = 2 0 A IF = 1 0 A IF = 5 A 8A 4A 0A 1 0 0 A / µs 3 0 0 A / µs 5 0 0 A / µs 7 0 0 A / µs 9 0 0 A / µs OF REVERSE RECOVERY CURRENT 100 0A / µs d i r r /d t, DIODE PEAK RATE OF FALL 20A 12A IF = 1 0 A 800nC 0nC 100A / µs 300A/ µs 500A/ µs 700A/ µs 900A/ µs 0ns 100A / µs 300A / µs 500A/ µs 700A / µs 900A / µs Irr, REVERSE RECOVERY CURRENT I F = 2 0A 1000nC 60 0A / µs 40 0A / µs 20 0A / µs 0A / µs 10 0A / µs d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) 300A / µs 500 A / µs 70 0A / µs 9 00A / µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) 9 Sep-02 SKP10N60A, SKB10N60A SKW10N60A 2.0V 20A I F = 20A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 15A 150°C 10A 100°C 25°C 5A 1.5V IF = F hl ! -55°C 1.0V 0A 0.0V 0.5V 1.0V 1.5V 2.0V ZthJCD, TRANSIENT THERMAL IMPEDANCE VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage -40°C 0°C 40°C 80°C 120°C Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature D=0.5 0 10 K/W 0.2 0.1 R,(K/W) 0.759 0.481 0.609 0.551 0.05 -1 10 K/W 0.02 R1 0.01 single pulse τ, (s) 5.53*10-2 4.28*10-3 4.83*10-4 5.77*10-5 R2 C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -2 10 K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T) 10 Sep-02 SKP10N60A, SKB10N60A SKW10N60A dimensions TO-220AB symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 dimensions TO-263AB (D2Pak) symbol [inch] max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E F G H 2.54 typ. 0.65 0.85 5.08 typ. 4.30 4.50 min max 0.1 typ. 0.0256 0.0335 0.2 typ. 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 11 [mm] min 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 Z 16.15 0.6358 Sep-02 SKP10N60A, SKB10N60A SKW10N60A dimensions TO-247AC symbol [mm] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅P Q 12 [inch] 3.61 6.12 0.1421 6.22 0.2409 0.2449 Sep-02 SKP10N60A, SKB10N60A SKW10N60A i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH an d Stray capacity C σ =55pF. Published by Infineon Technologies AG, 13 Sep-02 SKP10N60A, SKB10N60A SKW10N60A Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Sep-02 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.