INFINEON BTM7700G

D at a S h ee t , R ev . 1 . 0 , J un e 2 00 7
B TM 77 00 G
TrilithIC
A u to m o t i v e P o w e r
BTM7700G
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
2.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
4.1
4.2
4.3
4.4
4.5
4.6
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Status Flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.2
5.3
5.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Data Sheet
1
8
8
8
8
8
8
8
10
10
11
11
12
Rev. 1.0, 2007-06-12
TrilithIC
1
BTM7700G
Overview
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Quad D-MOS switch driver
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
Low RDS ON
High side: 110 mΩ typ. @ 25°C, 280 mΩ max. @ 150°C
Low side: 80 mΩ typ. @ 25°C, 200 mΩ max. @ 150°C
Peak current: typ. 9.5 A @ 25 °C
Very low quiescent current: typ. 5 µA @ 25 °C
Small outline, enhanced power PG-DSO-package
Operates up to 40 V
PWM frequencies up to 1 kHz
Load and GND-short-circuit-protection
Overtemperature shut down with hysteresis
Undervoltage detection with hysteresis
Status flag diagnosis
Internal clamp diodes
Isolated sources for external current sensing
Green Product (RoHS compliant)
AEC Qualified
PG-DSO-28-22
Description
The BTM7700G is part of the TrilithIC family containing three dies in one package: One double high-side switch
and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.
The sources are connected to individual pins, so the BTM7700G can be used in H-bridge- as well as in any other
configuration. The double high-side switch is manufactured in SMART SIPMOS® technology which combines low
RDS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low
RDS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology.
Type
Package
Marking
BTM7700G
PG-DSO-28-22
BTM7700G
Data Sheet
1
Rev. 1.0, 2007-06-12
BTM7700G
Description
2
Pin Configuration
2.1
Pin Assignment
DL1
1
28 DL1
IL1
2
27 SL1
DL1
3
26 SL1
LS-Leadframe
N.C.
4
25 DL1
DHVS
5
24 DHVS
GND
6
23 SH1
IH1
7
22 SH1
ST
8
21 SH2
IH2
9
20 SH2
HS-Leadframe
DHVS 10
19 DHVS
N.C. 11
18 DL2
LS-Leadframe
Figure 1
Data Sheet
DL2 12
17 SL2
IL2 13
16 SL2
DL2 14
15 DL2
Pin Assignment BTM7700G (Top View)
2
Rev. 1.0, 2007-06-12
BTM7700G
Description
Table 1
Pin Definitions and Functions
Pin No.
Symbol Function
1, 3, 25, 28
DL1
Drain of low-side switch1, leadframe 11)
2
IL1
Analog input of low-side switch1
4
N.C.
not connected
5, 10, 19, 24
DHVS
Drain of high-side switches and power supply voltage, leadframe 21)
6
GND
Ground
7
IH1
Digital input of high-side switch1
8
ST
Status of high-side switches; open Drain output
9
IH2
Digital input of high-side switch2
11
N.C.
not connected
12, 14, 15, 18 DL2
Drain of low-side switch2, leadframe 31)
13
IL2
Analog input of low-side switch2
16,17
SL2
Source of low-side switch2
20,21
SH2
Source of high-side switch2
22,23
SH1
Source of high-side switch1
26,27
SL1
Source of low-side switch1
1) To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe.
Pins written in bold type need power wiring.
Data Sheet
3
Rev. 1.0, 2007-06-12
BTM7700G
Description
2.2
Terms
VS=12V
IS
CL
100µF
CS
470nF
IFH1,2
DHVS
IST LK
IST
5,10,19,24
ST
8
Diagnosis
VST
IIH1
VSTL
IH1
7
IH2
9
VIH1
GND
6
VIH2
VDSH1
-VFH2
-VFH1
Biasing and Protection
Gate
Driver
VSTZ
IIH1
VDSH2
RO1
Gate
Driver
RO2
20,21
12,14,15,18
IGND
22,23
ILKCL
1,3,25,28
SH2
ISH2
DL2
IDL2
IDL LK 2
VUVON
SH1
ISH1
VUVOFF
DL1
IDL1
IDL LK 1
VIL1
IIL1
IL1
2
IIL2
IL2
13
VIL th 1
VIL2
26,27
VIL th 2
Figure 2
16,17
SL1
SL2
ISCP L 1
ISCP L 2
ISL1
ISL2
VDSL1
VDSL2
-VFL1
-VFL2
Terms BTM7700G
Table 2
HS-Source-Current
Named during Short Circuit
Named during Leakage-Cond.
ISH1,2
ISCP H
IDL LK
Data Sheet
4
Rev. 1.0, 2007-06-12
BTM7700G
Description
3
Block Diagram
DHVS
5,10,19,24
8
ST
Diagnosis
IH1
IH2
GND
7
9
Biasing and Protection
Driver
IN OUT
0 0 L L
0 1 L H
1 0 H L
1 1 H H
RO1
RO2
20,21
SH2
12,14,15,18
DL2
22, 23
SH1
1,3,25,28
DL1
6
2
IL1
13
IL2
26, 27
SL1
Figure 3
Data Sheet
16, 17
SL2
Block Diagram BTM7700G
5
Rev. 1.0, 2007-06-12
BTM7700G
4
Circuit Description
4.1
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are
driven by these stages and convert the logic signal into the necessary form for driving the power output stages.
The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard
N-channel vertical power-MOS-FETs.
4.2
Output Stages
The output stages consist of an low RDSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body
diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as
single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
4.3
Short Circuit Protection
The outputs are protected against short circuit to ground and short circuit over load
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal
reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction
temperature and the drop voltage.
4.4
Overtemperature Protection
The high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off
the output transistors and sets the status output to low.
4.5
Undervoltage Lockout
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The high-side output
transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF.
4.6
Status Flag
The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the
application circuit in Figure 4 “Application Example BTM7700G” on Page 15. Various errors as listed in the
table “Diagnosis” are reported by switching the open drain output ST to low.
Data Sheet
1
Rev. 1.0, 2007-06-12
BTM7700G
Table 3
Truth table and Diagnosis (valid only for the High-Side-Switches)
Flag
IH1
Normal operation;
identical with functional truth table
Overtemperature high-side switch1
Overtemperature high-side switch2
Overtemperature both high-side switches
Under voltage
IH2
SH1 SH2 ST Remarks
Inputs
Outputs
0
0
1
1
0
1
0
1
L
L
H
H
L
H
L
H
1
1
1
1
stand-by mode
switch2 active
switch1 active
both switches active
0
1
X
X
L
L
X
X
1
0
detected
X
X
0
1
X
X
L
L
1
0
detected
0
X
1
0
1
X
L
L
L
L
L
L
1
0
0
detected
detected
X
X
L
L
1
not detected
Inputs:
Outputs:
Status:
0 = Logic LOW
Z = Output in tristate condition
1 = No error
1 = Logic HIGH
L = Output in sink condition
0 = Error
X = don’t care
H = Output in source condition
X = Voltage level undefined
Data Sheet
2
Rev. 1.0, 2007-06-12
BTM7700G
5
Electrical Characteristics
5.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
– 40 °C < Tj < 150 °C
Pos.
Parameter
Symbol
Limit Values
Unit Remarks
min.
max.
VS
VS(SCP)
– 0.3
42
V
–
28
V
IS
IIH
VIH
–7
3)
A
TA = 25°C; tP < 100 ms
–5
5
mA
Pin IH1 and IH2
– 10
16
V
Pin IH1 and IH2
VST
IST
– 0.3
5.4
V
–5
5
mA
Pin ST
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
5.1.1
Supply voltage
5.1.2
Supply voltage for full short circuit
protection
5.1.3
HS-drain current2)
5.1.4
HS-input current
5.1.5
HS-input voltage
–
Status Output ST
5.1.6
Status pull up voltage
5.1.7+
Status Output current
5.1.8
Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
5.1.9
Drain-Source-Clamp voltage
VDSL
55
–
V
5.1.10
LS-drain current2)
IDL
–7
6
A
5.1.11
–
8
A
5.1.12
–
18
A
VIL = 0 V; ID ≤ 1 mA
Tj = 25°C
TA = 25°C; tP < 100 ms
TA = 25°C; tP < 10 ms
TA = 25°C; tP < 1 ms
VIL
– 20
20
V
Pin IL1 and IL2
Tj
Tstg
– 40
150
°C
–
– 55
150
°C
–
VESD
VESD
VESD
VESD
–
0.3
kV
–
1
kV
–
2
kV
–
8
kV
5.1.13
LS-input voltage
Temperatures
5.1.14
Junction temperature
5.1.15
Storage temperature
ESD Protection
4)
5.1.16
Input LS-Switch
5.1.17
Input HS-Switch
5.1.18
Status HS-Switch
5.1.19
Output LS and HS-Switch
1)
2)
3)
4)
all other pins connected
to Ground
Not subject to production test; specified by design
Single pulse
Internally limited
ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5kΩ, 100pF)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
3
Rev. 1.0, 2007-06-12
BTM7700G
5.2
Pos.
5.2.20
Functional Range
Parameter
Symbol Limit Values
Supply voltage
5.2.21
Input voltage HS
5.2.22
Input voltage LS
5.2.23
Status output current
5.2.24
Junction temperature
Unit
Remarks
V
After VS rising above
min.
max.
VS
VUVOFF
42
VIH
VIL
IST
Tj
– 0.3
15
V
–
– 0.3
20
V
–
0
2
mA
–
– 40
150
°C
–
VUVON
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table
5.3
Pos.
Thermal Resistance
Parameter
Symbol
5.3.25
LS-junction to soldering point1)
5.3.26
1)
5.3.27
HS-junction to soldering point
1)
Junction to Ambient
RthJA = Tj(HS) / (P(HS)+ P(LS))
RthJSP
RthJSP
RthJA
Limit Values
Unit
Conditions
20
K/W
measured to pin 3 or 12
–
20
K/W
measured to pin 19
36
–
K/W
2)
Min.
Typ.
Max.
–
–
–
–
1) Not subject to production test, specified by design.
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Data Sheet
4
Rev. 1.0, 2007-06-12
BTM7700G
5.4
Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
–
5
9
µA
IH1 = IH2 = 0 V
Tj = 25 °C
–
–
13
µA
IH1 = IH2 = 0 V
Current Consumption HS-switch
5.4.28
Quiescent current
IS
5.4.29
Supply current;
one HS-switch active
IS
–
1
2.5
mA
IH1 or IH2 = 5 V
VS = 12 V
5.4.30
Supply current;
both HS-switches active
IS
–
2
5
mA
IH1 and IH2 = 5 V
VS = 12 V
5.4.31
Leakage current of
high-side switch
ISH LK
–
–
6
µA
5.4.32
Leakage current through logic GND
in free wheeling condition
ILKCL = IFH + –
ISH
–
10
mA
VIH = VSH = 0 V
VS = 12 V
IFH = 3 A
VS = 12 V
Current Consumption LS-switch
5.4.33
Input current
IIL
–
10
100
nA
VIL = 20 V;
VDSL = 0V
VIL = 0 V
VDSL = 40V
5.4.34
Leakage current of low-side switch
IDL LK
–
–
10
µA
VUVON
VUVOFF
VUVHY
–
–
4.8
V
VS increasing
1.8
–
3.5
V
VS decreasing
–
1
–
V
VUVON – VUVOFF
Under Voltage Lockout HS-switch
5.4.35
Switch-ON voltage
5.4.36
Switch-OFF voltage
5.4.37
Switch ON/OFF hysteresis
Output stages
5.4.38
Inverse diode of high-side switch;
Forward-voltage
VFH
–
0.8
1.2
V
IFH = 3 A
5.4.39
Inverse diode of low-side switch;
Forward-voltage
VFL
–
0.8
1.2
V
IFL = 3 A
5.4.40
Static drain-source on-resistance of
high-side switch
RDS ON H
–
110
–
mΩ
–
200
280
mΩ
–
80
–
mΩ
–
140
200
mΩ
ISH = 1 A; VS = 12 V
Tj = 25 °C
ISH = 1 A; VS = 12 V
Tj = 150 °C
ISL = 1 A; VIL = 5 V
Tj = 25 °C
ISL = 1 A; VIL = 5 V
Tj = 150 °C
5.4.41
Static drain-source
on-resistance of low-side switch
Data Sheet
RDS ON L
5
Rev. 1.0, 2007-06-12
BTM7700G
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
9
11
13
A
Tj = – 40 °C
–
9.5
–
A
Tj = + 25 °C
5.5
7
9
A
Tj = + 150 °C
RO
12
22
50
kΩ
VDSL = 3 V
Short Circuit of high-side switch to GND
5.4.42
Initial peak SC current
tdel = 100 µs; VS = 12 V; VDSH = 12V
ISCP H
Short Circuit of high-side switch to VS
5.4.43
Output pull-down-resistor
Thermal Shutdown1)
5.4.44
Thermal shutdown junction
temperature
Tj SD
155
180
190
°C
–
5.4.45
Thermal switch-on junction
temperature
Tj SO
150
170
180
°C
–
5.4.46
Temperature hysteresis
∆Τ
–
10
–
°C
∆Τ = TjSD – TjSO
VST L
IST LK
VST Z
–
0.2
0.6
V
IST = 1.6 mA
–
–
10
µA
VST = 5 V
5.4
–
–
V
IST = 1.6 mA
tON
tOFF
dV/dtON
-dV/dtOFF
–
75
160
µs
–
60
160
µs
RLoad = 12 Ω
VS = 12 V
–
–
1.9
V/µs
–
–
2.7
V/µs
td(on)
tr
td(off)
tf
–
5
–
ns
–
22
–
ns
–
13
–
ns
–
18
–
ns
–
1
–
nC
ISL = 3 A; VDSL=12 V
–
3
–
nC
ISL = 3 A; VDSL=12 V
–
7
15
nC
–
2.8
-
V
ISL = 3 A; VDSL=12 V
VIL = 0 to 5 V
ISL = 3 A; VDSL=12 V
Status Flag Output ST of high-side switch
5.4.47
Low output voltage
5.4.48
Leakage current
5.4.49
Zener-limit-voltage
1)
Switching times of high-side switch
5.4.50
Turn-ON-time to 90% VSH
5.4.51
Turn-OFF-time to 10% VSH
5.4.52
Slew rate on 10 to 30% VSH
5.4.53
Slew rate off 70 to 40% VSH
1)
Switching times of low-side switch
5.4.54
Turn-ON Delay Time
5.4.55
Rise Time
5.4.56
Switch-OFF Delay Time
5.4.57
Fall Time
Gate charge of low-side switch
resistive load
ISL= 3A; VDSL=12V
VIL = 5V; RG = 16Ω
1)
5.4.58
Input to source charge
5.4.59
Input to drain charge
5.4.60
Input charge total
QIS
QID
QI
5.4.61
Input plateau voltage
V(plateau)
1)Not subject to production test; specified by design
Data Sheet
6
Rev. 1.0, 2007-06-12
BTM7700G
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
VIH High
VIH Low
VIH HY
IIH High
IIH Low
RI
VIH Z
–
–
2.5
V
–
1
–
–
V
–
–
0.3
–
V
–
15
30
60
µA
5
–
20
µA
VIH = 5 V
VIH = 0.4 V
2.7
4
5.5
kΩ
–
5.4
–
–
V
IIH = 1.6 mA
VIL th
0.9
1.7
2.35
V
IDL = 0.5 mA
Control Inputs of high-side switches IH 1, 2
5.4.62
H-input voltage
5.4.63
L-input voltage
5.4.64
Input voltage hysteresis
5.4.65
H-input current
5.4.66
L-input current
5.4.67
Input series resistance
5.4.68
Zener limit voltage
Control Inputs IL1, 2
5.4.69
Gate-threshold-voltage
1) Not subject to production test; specified by design
Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical
characteristics specified mean values expected over the production spread. If not otherwise specified,
typical characteristics apply at TA = 25 °C and the given supply voltage.
Data Sheet
7
Rev. 1.0, 2007-06-12
BTM7700G
6
Application Information
Note: The following simplified application examples are given as a hint for the implementation of the device only
and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the
device. The function of the described circuits must be verified in the real application
Watchdog
Reset
Q
RQ
100 kΩ
WD R
CQ
22µF
TLE
4278G
I
VS=12V
D
CS
10µF
D01
Z39
CD
47nF
VCC
DHVS
5,10,19,24
RS
ST
8
10 kΩ
Diagnosis
IH1
7
IH2
9
GND
6
Biasing and Protection
Gate
Driver
RO1
XC866
µP
Gate
Driver
RO2
20,21
12,14,15,18
22,23
1,3,25,28
IL1
2
IL2
13
26,27
GND
Figure 4
Data Sheet
SL1
SH2
DL2
SH1
M
DL1
16,17
SL2
Application Example BTM7700G
1
Rev. 1.0, 2007-06-12
BTM7700G
Green Product (RoHS compliant)
x
8˚ ma
7.6 -0.2 1)
+0.09
0.35 x 45˚
0.23
2.65 max
2.45 -0.2
Package Outlines
0.2 -0.1
7
0.4 +0.8
1.27
0.35 +0.15 2)
28
1
10.3 ±0.3
0.1
0.2 28x
15
18.1 -0.4 1)
14
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max rer side
2) Does not include dambar protrusion of 0.05 max per side
Figure 5
GPS05123
PG-DSO-28-22 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
1
Dimensions in mm
Rev. 1.0, 2007-06-12
BTM7700G
8
Revision History
Rev.
Date
Changes
1.0
2007-06-12
Initial Version
Data Sheet
1
Rev. 1.0, 2007-06-12
Edition 2007-06-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© 6/25/07 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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question, please contact the nearest Infineon Technologies Office.
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