IKA06N60T ^ TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs G Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Low EMI Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKA06N60T VCE IC;Tc=100°C VCE(sat),Tj=25°C Tj,max Marking Code 600V 6A 1.5V 175°C K06T60 E P-TO-220-3-31 (TO-220 FullPak) Package Ordering Code TO-220-FP Q67040S4678 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value Unit 600 V A TC = 25°C 12 TC = 100°C 6 Pulsed collector current, tp limited by Tjmax ICpuls 18 Turn off safe operating area - 18 VCE ≤ 600V, Tj ≤ 175°C IF Diode forward current, limited by Tjmax TC = 25°C 12 TC = 100°C 6 Diode pulsed current, tp limited by Tjmax IFpuls 18 Gate-emitter voltage VGE ±20 V tSC 5 µs Ptot 28 W °C Short circuit withstand time 1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 5.3 K/W RthJCD 6.5 RthJA 80 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j = 25° C - 1.5 2.05 T j = 17 5° C - 1.8 T j = 25° C - 1.6 2.05 T j = 17 5° C - 1.6 - 4.1 4.6 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 25 mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage Gate-emitter threshold voltage VF VGE(th) V V G E = 15V, I C = 6A V G E = 0V, I F = 6A I C = 0. 18 mA, VCE=VGE Zero gate voltage collector current ICES µA V C E = 600V , V G E = 0V T j = 25° C - - 40 - 700 T j = 17 5° C - Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 6A - 3.6 - S Integrated gate resistor RGint Power Semiconductors none 2 Ω Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series Dynamic Characteristic Input capacitance Ciss V C E = 25V, - 368 - Output capacitance Coss V G E = 0V, - 28 - Reverse transfer capacitance Crss f= 1 M Hz - 11 - Gate charge QGate V C C = 4 80V, I C = 6A - 42 - nC Internal emitter inductance LE P -T O - 2 20- 3- 31 - 7 - nH IC(SC) V G E = 1 5V,t S C ≤5µs V C C = 400V, T j = 25° C - 55 - A pF V G E = 1 5V measured 5mm (0.197 in.) from case Short circuit collector current1) Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 9.4 - - 5.6 - - 130 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , R G = 2 3Ω , L σ 2 ) = 6 0nH , C σ 2 ) =40pF Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr Diode reverse recovery charge ns - 58 - - 0.09 - - 0.11 - - 0.2 - T j = 25° C, - 123 - ns Qrr V R = 4 00V, I F = 6A, - 190 - nC Diode peak reverse recovery current Irrm di F / dt = 55 0A / µs - 5.3 - A Diode peak rate of fall of reverse recovery current during t b di r r / d t - 450 - A/µs mJ Anti-Parallel Diode Characteristic 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. typ. max. - 8.8 - - 8.2 - - 165 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 17 5° C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , R G = 23Ω L σ 1 ) = 6 0nH , C σ 1 ) =40pF Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr Diode reverse recovery charge ns - 84 - - 0.14 - - 0.18 - - 0.335 - T j = 17 5° C - 180 - ns Qrr V R = 4 00V, I F = 6A, - 500 - nC Diode peak reverse recovery current Irrm di F / dt = 55 0A / µs - 7.6 - A Diode peak rate of fall of reverse recovery current during t b di r r / d t - 285 - A/µs mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series tp=1µs 5µs 10A 10µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 15A T C =80°C 10A 5A T C =110°C Ic 50µs 1A 500µs 5ms 0,1A Ic 0A 10H z DC 100H z 1kH z 10kH z 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23Ω) 1V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 25W IC, COLLECTOR CURRENT 8A 20W 15W 10W Ptot, POWER DISSIPATION 10V 6A 4A 2A 5W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 5 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series 15A 15A V GE =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V GE =20V 15V 12A 13V 11V 9A 9V 7V 6A 3A 11V 9A 9V 7V 6A 0A 0V 1V 2V 3V 0V 15A 12A 9A 6A T J = 1 7 5 °C 3A 2 5 °C 0V 2V 4V 6V 8V 10V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 13V 3A 0A 0A 15V 12A 3,0V IC =12A 2,5V 2,0V IC =6A 1,5V IC =3A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series td(off) 100ns tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) t d(on) 10ns tf td(on) tr 10ns tr 1ns 0A 3A 6A 9A 12A 1ns 15A 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 23Ω, Dynamic test circuit in Figure E) tf 10ns td(on) tr 1ns 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) Power Semiconductors 50Ω 70Ω 90Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 100ns t d(off) 30Ω 6V 5V m ax. 4V typ. 3V m in. 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA) 7 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series *) E on and E ts include losses E ts* 0,5 mJ 0,4 mJ 0,3 mJ E off 0,2 mJ E on* 0,1 mJ 0,0 mJ 0A 2A 4A 6A 8A 0,4 mJ 0,3 mJ E on* 0,2 mJ E off 0,1 mJ 0,0 mJ 10A 10Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=400V, VGE=0/15V, RG=23Ω, Dynamic test circuit in Figure E) 30Ω 55Ω 80Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0,5m J E, SWITCHING ENERGY LOSSES 0,4mJ E, SWITCHING ENERGY LOSSES E ts* due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 0,6 mJ 0,3mJ E ts* 0,2mJ E off 0,1mJ due to diode recovery E ts * 0,4m J 0,3m J E off 0,2m J E on * 0,1m J E on* 0,0mJ 50°C 100°C 0,0m J 200V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) Power Semiconductors 300V 400V 500V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) 8 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series VGE, GATE-EMITTER VOLTAGE 1nF C iss c, CAPACITANCE 15V 120V 10V 480V 100pF C oss 5V C rss 10pF 0V 0nC 10nC 20nC 30nC 40nC 50nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=6 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 80A 60A 40A 20A 0A 12V tSC, IC(sc), short circuit COLLECTOR CURRENT 12µs 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 9 Rev. 2 Oct-04 IKA06N60T ^ D=0.5 D=0.5 0 10 K/W 0.2 R,(K/W) 0.381 2.57 0.645 1.454 0.062 0.186 0.1 0.05 0.02 0.01 -1 10 K/W R1 C1= τ1/R1 τ, (s) -2 1.867*10 1.350 -3 2.208*10 -4 5.474*10 -5 5.306*10 -1 5.926*10 6 R2 C2=τ2/R2 single pulse ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE TrenchStop series R,(K/W) 0.403 2.57 0.938 2.33 0.071 175 0.2 0 10 K/W 0.1 0.05 0.02 0.01 -1 10 K/W R1 τ, (s) -2 1.773*10 1.346 -3 1.956*10 -4 4.878*10 -5 4.016*10 -1 5.684*10 6 R2 C1= τ1/R1 C2= τ2/R2 single pulse -2 10µs 100µs 1ms 10ms 100ms 1s 10 K/W 1 tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 0,5µC Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 250ns 200ns TJ=175°C 150ns 100ns TJ=25°C 50ns 0ns 200A/µs 10µs 100µs 1ms 10ms 100ms 1s 400A/µs 600A/µs 0,4µC 0,3µC 0,2µC T J=25°C 0,1µC 0,0µC 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E) Power Semiconductors T J =175°C 10 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E) Rev. 2 Oct-04 1 IKA06N60T ^ TrenchStop series T J =25°C 6A 4A 2A 0A 200A/µs 400A/µs 600A/µs dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT -500A/µs 8A Irr, REVERSE RECOVERY CURRENT T J =175°C -300A/µs T J=175°C -200A/µs -100A/µs 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E) 10A 2,0V I F =12A VF, FORWARD VOLTAGE IF, FORWARD CURRENT -400A/µs 0A/µs 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E) 8A 6A 4A T J =175°C 2A 0A T J=25°C 6A 1,5V 3A 1,0V 0,5V 25°C 0,0V 0,0V 0,5V 1,0V 1,5V 2,0V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 11 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series dimensions P-TO220-3-31 symbol min max min max 10.37 10.63 0.4084 0.4184 B 15.86 16.12 0.6245 0.6345 C 0.65 0.78 0.0256 0.0306 2.95 typ. 0.1160 typ. E 3.15 3.25 0.124 0.128 F 6.05 6.56 0.2384 0.2584 G 13.47 13.73 0.5304 0.5404 H 3.18 3.43 0.125 0.135 K 0.45 0.63 0.0177 0.0247 L 1.23 1.36 0.0484 0.0534 M 12 [inch] A D Power Semiconductors [mm] 2.54 typ. 0.100 typ. N 4.57 4.83 0.1800 0.1900 P 2.57 2.83 0.1013 0.1113 T 2.51 2.62 0.0990 0.1030 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity C σ =40pF. Figure B. Definition of switching losses Power Semiconductors 13 Rev. 2 Oct-04 IKA06N60T ^ TrenchStop series Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2 Oct-04