Dual Power Operational Amplifier TCA 2465 Overview Bipolar IC Features • • • • • High output peak current of twice 2.5 A Twice 2.0 A output peak current for TCA 2465 G Large supply voltage range up to 42 V High slew rate of 2 V/µs Outputs fully protected (DC short-circuit proof for P-SIP-9-1 VS up to 18 V; for P-DSO-20-6 VS up to 14 V) • Thermal overload protection • Inhibit input enables “tristate” outputs • Integrated clamp diodes P-SIP-9-1 P-DSO-20-6 Type Ordering Code Package TCA 2465 Q67000-A8109 P-SIP-9-1 TCA 2465 G Q67000-A8334 P-DSO-20-6 Description The IC contains two identical op amps, each supplying a high output current of 2.5 A at supply voltages between ± 3 V and ± 20 V. Internal compensation permits negative feedback of the amplifiers up to a min. of 20 dB. Both amplifiers can be disconnected at V8 ≥ 2 V via an inhibit input. Integrated protective circuits protect the outputs against short-circuit to + VS and – VS and prevent thermal overloading of the IC. TCA 2465 G comes in a special surface-mounted power package similar to P-DSO-20 and delivers twice 2.0 A output peak current. Semiconductor Group 1 1998-02-01 TCA 2465 TCA 2465 9 Output 1 -Input 1 +Input 1 - VS +V S Inhibit Input +Input 2 -Input 2 Output 2 1 IEP00550 TCA 2465 G + VS Output 1 N.C. -VS Inverting Input 1 Non-Inverting Input 1 Frequency Compensation 1 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 Inhibit Output 2 N.C. -VS Inverting Input 2 Non-Inverting Input 2 Frequency Compensation 2 IEP00888 Figure 1 Pin Configuration (top view) Semiconductor Group 2 1998-02-01 TCA 2465 +VS 5 80 dB +Input 1 -Input 1 3 2 0 dB + - Inhibit 6 Input +Input 2 -Input 2 7 8 1 Output 1 Power Limitation and Thermal Protection TCA 2465 + 9 - Output 2 0 dB 80 dB 4 IEB00551 -VS Figure 2 Block Diagram TCA 2465 Semiconductor Group 3 1998-02-01 TCA 2465 +VS 1 80 dB Non-Inverting 9 Input 1 8 Inverting Input 1 0 dB + 2 - 10 Frequency Compensation 1 Frequency Compensation Inhibit 20 TCA 2465 G Power Limitation and Temperature Protection 11 Frequency Compensation 2 Frequency Compensation Non-Inverting Input 2 Inverting Input 2 12 13 Output 1 + 19 - Output 2 0 dB 80 dB 4...7,14...17 IEB00889 -VS Figure 3 Block Diagram TCA 2465 G Semiconductor Group 4 1998-02-01 TCA 2465 Absolute Maximum Ratings TC = – 40 to 85 °C Note: Values in brackets refer to TCA 2465 G Parameter Symbol Limit Values min. max. Unit Remarks Supply voltage Differential input voltage VS VID – – ± 21 (– VS) + (VS) V V ∆V2-3 or ∆V8-7 Output current Output current IQ IQ – 2.5 (– 2)1) – 1.5 2.5 (2)1) – A A Supply current Ground current IS IGND VI V6 Tj Tstg – 5 (– 2)1) – 5.5 (– 2)1) 5.5 (2)1) 5 (2)1) A A I1 or I9 VS ≥ ± 15 V; VQ < – VS IS I4 – VS – VS VS VS V V V2, V3, V7, V8 – – 50 150 150 °C °C – Input voltage Inhibit input Junction temperature Storage temperature range 1) t < 1 ms, f ≤ 400 Hz Semiconductor Group 5 1998-02-01 TCA 2465 Operating Range Parameter Symbol Limit Values Unit Remarks min. max. VS IQ TC GVmin IF ±3 ± 20 V – (– 1.3) (1.3) A – – 40 85 °C 1) 20 – dB – – (1.3) A – Thermal resistance junction - ambient junction - case Rth jA Rth jC – – 60 5 K/W P-SIP-9-1 K/W P-SIP-9-1 Thermal resistance junction - ambient junction - case Rth jA Rth jC – – 60 12 K/W P-DIP-16-2 K/W P-DIP-16-2 Thermal resistance junction - ambient junction - case Rth jA Rth jC – – (70) (22) K/W (soldered) P-DSO-20-6 K/W P-DSO-20-6 Supply voltage Output current Case temperature Voltage gain Forward current IF of free wheeling diodes 1) PD = 12 W P-SIP-9-1 PD = 3.5 W P-DSO-20-6 Semiconductor Group 6 1998-02-01 TCA 2465 Characteristics VS = ± 10 V; Tj = 25 °C, unless otherwise specified Note: Values in brackets refer to TCA 2465; G Parameter Symbol Limit Values Unit Test Circuit min. typ. max. IS IS VIO IIO II – – – 30 5 50 mA mA 1; 12 1; 12 – 10 – 10 mV 2; 13 – 100 – – 0.25 100 1 nA µA 3; 14 3; 14 VQ pp VQ pp VQ pp RI ± 8.5 ±8 – ±9 ± 8.5 ±8 – – – V V V 4; 15 4; 15 4; 15 1 5 – MΩ 4; 15 Open-loop voltage gain f = 100 kHz GVO 70 80 – dB 5; 16 Common-mode input voltage range VIC 7/– 10 ± 7.5/– 10.5 – V 6; 17 Common-mode rejection Supply voltage rejection kCMR kSVR 70 – 70 80 – 80 – – dB dB 6; 17 7; 18 Temperature coefficient of VIO – 40 °C ≤ Tj ≤ + 85 °C Temperature coefficient of IIO – 40 °C ≤ Tj ≤ + 85 °C αVIO – 50 – µV/K 2; 13 αIIO – 0.4 – nA/K 3; 14 Slew rate of VQ for non-inverting operation Slew rate of VQ for inverting operation SR – 2 (0.5) – V/µs 8; 19 SR – 2 (0.5) – V/µs 9; 20 Noise voltage (DIN 45405, referred to input) Vn – 3 – µV 1; 12 V6 OFF V6 ON 2 – – – – 0.8 V V 1; 12 1; 12 Open-loop supply current consumption S1 in position 1 S1 in position 2 Input offset voltage Input offset current Input current Output voltage RL = 12 Ω; f = 1 kHz RL = 4 Ω; f = 1 kHz1) RL = 470 Ω; f = 40 kHz Input resistance f = 1 kHz Inhibit input (referred to – VS) V6 for IC turned OFF V6 for IC turned ON Semiconductor Group 7 1998-02-01 TCA 2465 Characteristics (cont’d) VS = ± 10 V; Tj = 25 °C, unless otherwise specified Note: Values in brackets refer to TCA 2465; G Parameter Symbol Limit Values Unit Test Circuit min. typ. max. – – 0.1 0.5 0.5 3 µA µA 1; 12 1; 12 Turn-ON dead time referred to I I1; 9 I > A3) Turn-OFF dead timeV6 OFF/ON tD OFF I I 1; 9 I < 1 A3) – 10 20 µs 1; 12 – 10 20 µs 1; 12 Short-circuit current4) (switch S3 closed) Short-circuit current4) (switch S4 closed) ISC – 1 – A 1; 12 ISC – 1 – A 1; 12 H-input current, V6 = 5 V2) L-input current, V6 = 0 V2) 1) 2) 3) 4) I6H I6 tD ON Only for P-SIP-9-1 Referred to – VS Switch S2 closed Only for P-SIP-9-1, for P-DSO-20-6 VS ≤ ± 7 V Semiconductor Group 8 1998-02-01 TCA 2465 Test Circuits +VS 11, 10 1 12, 9 + 19, 2 20 13, 8 100 k Ω 4 10 k Ω 10 kΩ 4Ω 1Ω 220 nF S1 - VS Figure 4 IES01367 Open-Loop Supply Current Consumption; Noise Voltage (TCA 2465 G) + VS 11, 10 + VQ 4.7 k Ω 20 1Ω VQ = 100 VΙ O 47 Ω 47 Ω - VS Figure 5 220 nF IES01368 Input Offset Voltage; Temperature Coefficient of VIO (TCA 2465 G) Semiconductor Group 9 1998-02-01 TCA 2465 + VS S1 1 MΩ (220 pF) 11, 10 - VQ + 4.7 k Ω S2 1Ω 20 1 MΩ + = 100 Ω 47 Ω 220 nF - VS Figure 6 IES01369 Input Offset Current; Input Current; Temperature Coefficient of IIO (TCA 2465 G) + VS S 10 µF 11, 10 1 MΩ + VΙ VQ 20 42.3 kΩ 1Ω RL 4.7 kΩ 4.7 k Ω - VS Figure 7 220 nF IES01370 Output Voltage; Input Resistance (TCA 2465 G) Semiconductor Group 10 1998-02-01 TCA 2465 + VS G V0 = 20 x log (101 x (VQ / VΙ ( ( 100 k Ω VΙ 10 kΩ 10 kΩ 11, 10 - ~~ 100 Ω f = 100 Hz VQ + 8.2 Ω 1Ω 20 10 k Ω 220 nF = 10 Ω - VS Figure 8 IES01371 Open-Loop Voltage Gain GVO (TCA 2465 G) + VS 11, 10 4.7 k Ω = - 100 Ω 10 Ω VQ + 20 ~~ 8.2 Ω f = 100 Hz 220 nF - VS Figure 9 1Ω IES01372 Common Mode Voltage Gain GVC Common-Mode Rejection kCMR (dB) = GVO (dB) – GVC (dB) (TCA 2465 G) Semiconductor Group 11 1998-02-01 TCA 2465 + VS k SVR (dB) = 20 x log ( ∆VQ / (GV x ∆VS ( ( 56 Ω 1000 µF 220 nF ∆VS ~~ 470 Ω f = 100 Hz 11, 10 47 Ω - 47 Ω + VQ 20 8.2 Ω 1Ω 220 nF - VS IES01373 Figure 10 Supply Voltage Rejection kSVR (TCA 2465 G) + VS (220 pF) 11, 10 + VQ 10 kΩ ~~ 91 k Ω 20 Square-Wave (Peak-to-Peak) 0.6 V 10 kΩ - VS 1Ω 8.2 Ω 220 nF IES01374 Figure 11 Slew Rate for Non-Inverting Operation (TCA 2465 G) Semiconductor Group 12 1998-02-01 TCA 2465 + VS 10 k Ω 100 kΩ (220 pF) 11, 10 ~~ Square-Wave (Peak-toPeak) 0.6 V - VQ + 20 10 k Ω 1Ω 8.2 Ω 220 nF - VS IES01375 Figure 12 Slew Rate for Inverting Operation (TCA 2465 G) Semiconductor Group 13 1998-02-01 TCA 2465 a) Amplifier; GV = 5 (220 pF) + 10 V 1 12, 9 13, 8 11, 10 + 19, 2 - 4.7 kΩ 4 22 k Ω 20 ~~ 5.6 k Ω 12 Ω 1Ω 220 nF - 10 V IES01376 b) Voltage follower TCA 2465 G + 10 V 1 12, 9 13, 8 ~~ 220 pF 11, 10 + 19, 2 4 1Ω 20 12 Ω 220 nF - 10 V IES01377 Figure 13 Non-Inverting Operation (TCA 2465 G) Semiconductor Group 14 1998-02-01 TCA 2465 a) Amplifier; GV = – 5 + 10 V 1 12 k Ω 12, 9 13, 8 11, 10 + 19, 2 4 1Ω 20 75 k Ω 15 kΩ 12 Ω 220 nF ~~ - 10 V IES01378 b) Inverter TCA 2465 G + 10 V 1 12, 9 13, 8 220 pF 11, 10 + 19, 2 4 1Ω 20 10 k Ω 10 kΩ 12 Ω 220 nF ~~ - 10 V IES01379 Figure 14 Inverting Operation (TCA 2465 G) Semiconductor Group 15 1998-02-01 TCA 2465 + VS S3 5 3, 7 1 S1 + 1, 9 6 2, 8 2 100 k Ω 4 10 k Ω 10 kΩ 4Ω 1Ω 220 nF S4 - VS S2 IES00553 Figure 15 Open-Loop Supply Current Consumption; Noise Voltage (TCA 2465/A) +V S + VQ 4.7 k Ω 6 1Ω VQ = 100 VΙ O 47 Ω 47 Ω - VS 220 nF IES00554 Figure 16 Input Offset Voltage; Temperature Coefficient of VIO (TCA 2465/A) Semiconductor Group 16 1998-02-01 TCA 2465 + VS S1 1 MΩ - VQ + S2 1Ω 6 1 MΩ 4.7 k Ω + = 100 Ω 47 Ω 220 nF - VS IES00555 Figure 17 Input Offset Current; Input Current; Temperature Coefficient of IIO (TCA 2465) + VS S 10 µF 1 MΩ + VΙ VQ 6 42.3 k Ω 1Ω RL 4.7 k Ω 4.7 k Ω - VS 220 nF IES00556 Figure 18 Output Voltage; Input Resistance (TCA 2465) Semiconductor Group 17 1998-02-01 TCA 2465 +V S G V0 = 20 x log (101 x (VQ / VΙ ( ( 100 k Ω VΙ 10 kΩ 10 kΩ - ~~ f = 100 Hz VQ + 100 Ω 1Ω 6 10 k Ω 8.2 Ω 220 nF = 10 Ω - VS IES00557 Figure 19 Open-Loop Voltage Gain GVO (TCA 2465) + VS 4.7 k Ω = 10 Ω 100 Ω VQ + 6 ~~ 1Ω 8.2 Ω f = 100 Hz 220 nF - VS IES00558 Figure 20 Common Mode Voltage Gain GVC Common-Mode Rejection kCMR (dB) = GVO (dB) – GVC (dB) (TCA 2465/A) Semiconductor Group 18 1998-02-01 TCA 2465 + VS k SVR (dB) = 20 x log ( ∆VQ / (GV x ∆VS ( ( 56 Ω 1000 µF 220 nF ∆VS ~~ 470 Ω f = 100 Hz 47 Ω - 47 Ω + VQ 8.2 Ω 1Ω 6 220 nF - VS IES00559 Figure 21 Supply Voltage Rejection kSVR (TCA 2465) + VS + VQ 10 kΩ ~~ 91 k Ω 6 Square-Wave (Peak-to-Peak) 0.6 V 10 kΩ 1Ω 8.2 Ω 220 nF - VS IES00560 Figure 22 Slew Rate for Non-Inverting Operation (TCA 2465) Semiconductor Group 19 1998-02-01 TCA 2465 + VS 10 k Ω 100 kΩ - Square-Wave (Peak-toPeak) 0.6 V ~~ VQ + 8.2 Ω 1Ω 6 10 k Ω 220 nF - VS IES00561 Figure 23 Slew Rate for Inverting Operation (TCA 2465) Note: Values in brackets refer to TCA 2465 A Amplifier; GV = 5 +10 V 5 3, 7 2, 8 4.7 kΩ + 1, 9 4 22 k Ω 6 ~~ 5.6 kΩ -10 V 1Ω 4Ω 220 nF IES00562 Figure 24 Non-Inverting Operation (TCA 2465) Semiconductor Group 20 1998-02-01 TCA 2465 Amplifier; GV = – 5 +10 V 5 12 k Ω 3, 7 2, 8 + 1, 9 4 75 k Ω 15 kΩ 4Ω 1Ω 6 220 nF ~~ -10 V IES00564 Figure 25 Inverting Operation (TCA 2465) Semiconductor Group 21 1998-02-01 TCA 2465 Safe Operating Area (SOA) Peak Output Current versus Collector-Emitter Voltage Tj = 25 °C, VCE = + VS – VQ or VCE = – VS – VQ ΙQ Max. Permissible Power Dissipation versus Case Temperature IED00566 24 IED00576 4.0 A 3.5 Ptot W 20 3.0 TCA 2465 16 2.5 12 2.0 1.5 8 1.0 4 TCA 2465G 0.5 0 0 10 20 30 0 40 V 50 V CE 25 50 75 100 ˚C 150 TC Input Current versus Junction Temperature VS = ± 10 V Supply Current versus Supply Voltage Tj = 25 °C IED00567 50 0 IED00568 300 Ι S mA ΙΙ nA 40 250 30 200 20 150 10 0 0 5 10 Semiconductor Group 15 100 -40 -25 20 V 25 VS 22 0 25 50 75 ˚C Tj 1996-05-01 TCA 2465 Phase Response versus Frequency VS = ± 10 V; Tj = 25 °C Open-Loop Voltage Gain versus Frequency IED00569 100 G VO dB -Φ Deg. VS = ±10 V T j = 25 ˚C 80 IED00570 0 -30 70 -60 60 50 -90 40 -120 30 20 -150 10 0 1 10 10 2 10 3 10 4 -180 1 10 10 5 Hz 10 6 f 10 3 10 4 10 5 10 6 Hz 10 7 f TCA 2465, G Phase Response versus Frequency VS = ± 10 V, Tj = 25 °C TCA 2465, G Open-Loop Voltage Gain versus Frequency VS = ± 10 V, Tj = 25 °C IED00571 100 10 2 IED00570 0 -Φ Deg. G VO dB -30 80 C comp = 220 pF C comp = 100 pF C comp = 0 pF 70 -60 60 -90 50 40 -120 30 20 -150 10 0 1 10 10 2 Semiconductor Group 10 3 10 4 -180 1 10 10 5 Hz 10 6 f 23 10 2 10 3 10 4 10 5 10 6 Hz 10 7 f 1996-05-01 TCA 2465 Saturation Voltage versus Peak Output Current Tj = 25 °C Common-Mode Rejection versus Case Temperature VS = ± 10 V IED00573 90 k CMR IED00574 2.0 VSat dB V T j = 25 ˚C 1.5 85 TCA 2465G 80 1.0 75 0.5 70 -40 -25 0 0 25 50 75 ˚C TC TCA 2465 0 0.5 1.0 1.5 2.0 A 2.5 ΙQ Forward Current versus Forward Voltage IED00575 3.0 ΙF T j = 25 ˚C Pins 1, 9 Pin 4 A 2.0 TCA 2465 1.0 TCA 2465G Pin (9) 5 Pins (7, 10) 1, 9 0 0 1.0 V 2.0 VF Semiconductor Group 24 1996-05-01 TCA 2465 Package Outlines GPI05038 P-SIP-9-1 (Plastic Single In-line Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Semiconductor Group 25 Dimensions in mm 1998-02-01 TCA 2465 1.27 x 8˚ ma 7.6 -0.2 1) +0.09 0.35 x 45˚ 0.23 2.65 max 2.45 -0.2 0.2 -0.1 P-DSO-20-6 (Plastic Dual Small Outline Package) 0.4 +0.8 0.35 +0.15 2) 0.2 24x 20 0.1 10.3 ±0.3 11 GPS05094 1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 26 Dimensions in mm 1998-02-01